Abstract:
Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.
Abstract:
The present invention provides a method of manufacturing a PDP that prevents defects due to dust adhering to a photomask, for example, from occurring in a structure of the PDP. In photolithography, exposure is performed twice in a same process, and photomask (22) is moved within an allowable range of displacement in an exposure pattern, between a first and a second exposures. Photomask (22) is exposed twice in total before and after moving photomask (22). Region (21a), an unexposed region due to interruption of dust (22b) attached to photomask (22), can be suppressed, enabling pattern exposure on photosensitive Ag paste film (21) to be favorably performed.
Abstract:
The present invention provides a method of manufacturing a PDP that prevents a defect from occurring in a structure of the PDP; and also suppresses retroflexion, exfoliation, and the like, of the structure. In photolithography, exposure is performed twice with a first and a second photomasks, each having a different aperture width, but the same exposure pattern. The amount of exposure is different between first exposure region (A′) through the first photomask; and second exposure region (B′) through the second photomask.
Abstract:
A plasma display panel is disclosed. It can display quality videos and its manufacturing steps can be reduced. A pair of substrates (3), (11) confront each other to form dischargeable space (16) in between. At least front one (3) of the substrates is transparent, and includes display electrodes (6) formed of scan electrodes (4) and sustain electrodes (5), as well as light-blocking sections (7) corresponding to non-dischargeable sections (18) disposed between the display electrodes (6). The other substrate (11) facing to rear includes phosphor layers (15R), (15G), (15B) which emit light by discharging. Each one of display electrodes (6) is formed of transparent electrodes (4a), (5a) and bus electrodes (4b), (5b) which are formed of a plurality of electrode-layers. At least one of the electrode-layers is made of black layer (19) having a specific volume resistance ranging from 1×105 Ωcm to 1×109 Ωcm, and light-blocking sections (7) are made of identical material of black layer (19).
Abstract:
The plasma display panel disclosed has a front substrate and a rear substrate positioned to face each other. The front substrate includes display electrodes provided with scan electrodes and sustain electrodes, and a light-shield provided on a non-discharge area between display electrodes. A rear substrate includes phosphor layers to emit light by discharge. The display electrodes are composed of transparent electrodes, and bus electrodes. The bus electrodes are composed of a plurality of electrode layers and at least one of the electrodes is composed of a black layer having a product of the resistivity and layer thickness of not larger than 2 Ωcm2. A light-shield is composed of a black layer with the resistivity of not smaller than 1×106 Ωcm.
Abstract:
The present invention provides an image display device capable of displaying a good image by suppressing yellowing of a glass substrate, and a high-yield manufacturing method of the glass substrate. The image display device is formed of a front-side glass substrate and a back-side glass substrate. In this manufacturing method, a glass substrate is used as the front-side glass substrate when Sn++ content in the glass substrate is a predetermined value or less, and the glass substrate is used as the back-side glass substrate when the Sn++ content exceeds the predetermined value.
Abstract:
A method of manufacturing a plasma display panel, whose glass substrate is not tinged and luminance is high, is provided, even when silver material is used. A layer including silver compounds, which include sulfur generated on a surface of an electrode by reacting on sulfur in air, is removed before a forming process of a dielectric layer. Then decomposition of the compound is restricted in a firing process of the dielectric layer. Even when the electrode having the silver material with high electrical conductivity is used, yellow coloration on the glass substrate is prevented. As a result, a high quality plasma display panel which does not decrease in luminance is provided.
Abstract:
The present invention provides an image display device capable of displaying a good image by suppressing yellowing of a glass substrate, and a high-yield manufacturing method of the glass substrate. The image display device is formed of a front-side glass substrate and a back-side glass substrate. In this manufacturing method, a glass substrate is used as the front-side glass substrate when Sn++ content in the glass substrate is a predetermined value or less, and the glass substrate is used as the back-side glass substrate when the Sn++ content exceeds the predetermined value.
Abstract translation:本发明提供一种能够通过抑制玻璃基板的黄变而显示良好图像的图像显示装置,以及玻璃基板的高成品率制造方法。 图像显示装置由前侧玻璃基板和背面玻璃基板形成。 在该制造方法中,当玻璃基板中的Sn ++含量为规定值以下时,使用玻璃基板作为前侧玻璃基板,将玻璃基板作为背面玻璃基板使用时 Sn <++>含量超过预定值。
Abstract:
Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
Abstract:
Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.