摘要:
Disclosed is an elastic roller for electrophotography wherein bleeding of an unreacted material, a plasticizer and an additive from the elastic layer to the roller surface is suppressed. Also disclosed is an elastic roller for electrophotography having excellent durability for long use. Specifically disclosed is (1) an elastic roller for electrophotography comprising a metal supporting member, an elastic layer formed on the outer circumferential surface of the metal supporting member, and a coating film which is formed on the elastic layer using a styrene-based thermoplastic elastomer and/or an olefin-based thermoplastic elastomer and composed of at least one or more layers. Also disclosed is (2) an elastic roller for electrophotography having excellent durability for long use wherein “a styrene-based thermoplastic elastomer modified by an acid and/or an acid anhydride” and/or “an olefin-based thermoplastic elastomer modified by an acid and/or an acid anhydride” is used as the material for coating film which is formed on the outer circumferential surface of the elastic layer and composed of at least one or more layers.
摘要:
In a transparent electroconductive film including a transparent substrate and a transparent electroconductive oxide layer disposed on the transparent substrate, when the transparent electroconductive oxide layer is composed of zinc oxide, the surface resistivity of the transparent electroconductive oxide layer increases with time and thus it has been difficult to obtain a transparent electroconductive film stable against an environmental variation. Consequently, hard carbon films are provided on the surfaces of a transparent electroconductive oxide layer including at least one layer and containing zinc oxide as a main component in “the order of transparent substrate-hard carbon film-transparent electroconductive oxide layer-hard carbon film” or “the order of hard carbon film-transparent substrate-transparent electroconductive oxide layer-hard carbon film”. Alternatively, an organosilicon compound covering layer is provided on a surface of the transparent electroconductive oxide layer. Thereby, the water contact angle can be 75 degrees or more, and an increase in the resistivity of the transparent electroconductive oxide layer can be suppressed.
摘要:
This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.
摘要:
A zinc oxide transparent electroconductive oxide has been difficult to use as a substrate having a transparent electrode because the oxide, when configured as a thin film, because of increased resistivity due to air and/or moisture exposure. Though doping can inhibit increase of resistance to some extent, there has been difficulty in selecting a type and an amount of a doping substance and because doping causes high initial resistance. A substrate having a transparent electrode with stable resistivity against various environments is produced by a magnetron sputtering method using a target composed of a zinc oxide transparent electroconductive oxide containing 0.50 to 2.75% silicon dioxide by weight relative to the oxide.
摘要:
This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.An embodiment of the photoelectric conversion device is characterized in that; a transparent insulating substrate is located on the light incidence side, and a transparent conductive layer, at least one photoelectric conversion unit, a transparent electrode layer having electrical conductivity as typified by zinc oxide, a hard carbon layer having electrical conductivity as typified by diamond-like carbon, and a high reflecting electrode layer are stacked in this order on an opposite surface from a light incidence side of the transparent insulating substrate.
摘要:
Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
摘要:
A zinc oxide transparent electroconductive oxide has been difficult to use as a substrate having a transparent electrode because the oxide, when configured as a thin film, because of increased resistivity due to air and/or moisture exposure. Though doping can inhibit increase of resistance to some extent, there has been difficulty in selecting a type and an amount of a doping substance and because doping causes high initial resistance. A substrate having a transparent electrode with stable resistivity against various environments is produced by a magnetron sputtering method using a target composed of a zinc oxide transparent electroconductive oxide containing 0.50 to 2.75% silicon dioxide by weight relative to the oxide.
摘要:
Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
摘要:
The present invention improves a photoelectric conversion efficiency of a crystalline silicon-based solar cell. The crystalline silicon based solar cell includes a silicon-based thin-film of a first conductivity type and a first transparent electrode layer, in this order, on one surface of a conductive single-crystal silicon substrate, and a silicon-based thin-film of the opposite conductivity type and a second transparent electrode layer, in this order, on the other surface of the conductive single-crystal silicon substrate. The first and second transparent electrode layers are each formed of a transparent conductive metal oxide, and the first transparent electrode layer preferably has at least two layers, and a total thickness of 50 to 120 nm, wherein the carrier density of the substrate-side electroconductive layer is higher than that of the surface-side electroconductive layer, and the carrier density of the surface-side electroconductive layer is 1 to 4×1020 cm−3.
摘要:
A transparent electroconductive film includes a transparent substrate, at least one transparent electroconductive oxide layer deposited on the transparent substrate, and a plurality of hydrogen-containing carbon layers deposited on the transparent electroconductive oxide layer. At least one of the transparent electroconductive oxide layers contains zinc oxide. The hydrogen-containing carbon layers may be more than one, in which at least one of the hydrogen-containing carbon layers has a refractive index of 1.25 to 1.85. More preferably, the transparent electroconductive film satisfies a relationship of T1/T0≧1.02 for light having a wavelength of 550 nm where T0 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer is deposited and T1 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer and the plurality of hydrogen-containing carbon layers are deposited.