公开(公告)号：US20070222611A1

公开(公告)日：2007-09-27

申请号：US11754841

申请日：2007-05-29

Applicant: David Cathey

Inventor： David Cathey

IPC: G08B13/14

CPC classification number: H01Q1/2208 ,  G06K19/0723 ,  G06K19/0726 ,  G06K19/07749 ,  H01Q1/2225 ,  H01Q9/30

Abstract: A radio frequency communication device and methods of testing and tuning an antenna attached thereto are described. A radio frequency communication device comprises internal circuitry and an antenna having a plurality of antenna segments associated therewith. Each antenna segment is associated with the antenna in either series or parallel relation through at least one of a fuse and an antifuse. In testing and tuning, a comparison is made to indicate whether the antenna is too short or too long.

Abstract translation: 一种射频通信装置及其附着天线的测试和调谐方法。 射频通信设备包括内部电路和具有与其相关联的多个天线段的天线。 每个天线段通过熔丝和反熔丝中的至少一个与串联或并联的天线相关联。 在测试和调谐中，比较天线是否太短或太长。

公开(公告)号：US20070052339A1

公开(公告)日：2007-03-08

申请号：US11591067

申请日：2006-11-01

Applicant: David Cathey

Inventor： David Cathey

IPC: H01J9/02 ,  H01J1/02

CPC classification number: H01J1/3044 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S148/116 ,  Y10S148/172 ,  Y10S438/978

Abstract: Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitter tips and decreases toward the base of the emitter tips. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitter tips having impurity gradients.

Abstract translation: 公开了电子发射器和制造发射体的方法，其具有杂质的浓度梯度，使得最高浓度的杂质位于发射极尖端的顶点处并朝向发射极尖端的基极减小。 该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射极尖端。

公开(公告)号：US20060189244A1

公开(公告)日：2006-08-24

申请号：US11405112

申请日：2006-04-17

Applicant: David Cathey ,  Jimmy Browning

Inventor： David Cathey ,  Jimmy Browning

IPC: H01J9/26 ,  H01J9/24 ,  H01J9/32

CPC classification number: H01J31/123 ,  H01J9/025 ,  H01J9/185 ,  H01J9/242 ,  H01J29/028 ,  H01J29/864 ,  H01J31/127 ,  H01J2329/863

Abstract: A method is provided for forming and associating a lower section of a large-area field emission device (“FED”) that is sealed under a predetermined level of vacuum pressure with an upper section of a large-area FED. The upper section of the FED includes a faceplate. A first conductive layer is disposed on a surface of the faceplate. A matrix member is disposed on a surface of the first conductive layer, and cathodoluminescent material is disposed on the first conductive layer in areas not covered by the matrix member. The method includes disposing a plurality of spacers between the upper and lower sections of the FED to provide a predetermined separation between the upper and lower sections, with the spacers having cross-sectional shapes commensurate with stresses exerted on the spacers and/or heights commensurate with stresses exerted on the spacers. Resulting FED structures are disclosed.

公开(公告)号：US20050003655A1

公开(公告)日：2005-01-06

申请号：US10909527

申请日：2004-08-02

Applicant: David Cathey ,  Trung Doan

Inventor： David Cathey ,  Trung Doan

IPC: C23C16/40 ,  H01L21/4763 ,  H01L21/76 ,  H01L21/768

CPC classification number: H01L21/76829 ,  C23C16/403 ,  H01L21/76831 ,  H01L21/76834

Abstract: A process is disclosed for creating a barrier layer on a silicon substrate of an in-process integrated circuit. The process uses MOCVD to form a metal oxide film. The source gas is preferably an organometallic compound. Ozone is used as an oxidizing agent in order to react with the source gas at a low temperature and fully volatilize carbon from the source gas. The high reactivity of ozone at a low temperature provides a more uniform step coverage on contact openings. The process is used to create etch stop layers and diffusion barriers.

Abstract translation: 公开了一种用于在工艺集成电路的硅衬底上形成阻挡层的工艺。 该方法使用MOCVD形成金属氧化物膜。 源气体优选为有机金属化合物。 使用臭氧作为氧化剂，以便在低温下与原料气反应，并使源自气体的碳完全挥发。 臭氧在低温下的高反应性在接触开口上提供更均匀的步骤覆盖。 该方法用于产生蚀刻停止层和扩散阻挡层。