公开(公告)号：US09909209B2

公开(公告)日：2018-03-06

申请号：US14362826

申请日：2012-12-12

Applicant: Element Six Technologies Limited

Inventor： Paul Nicholas Inglis ,  John Robert Brandon ,  Joseph Michael Dodson ,  Timothy Peter Mollart

IPC: C23C16/01 ,  C23C16/27 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32 ,  G02B1/113

CPC classification number: C23C16/274 ,  C23C16/01 ,  C23C16/4401 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/463 ,  C23C16/466 ,  C23C16/511 ,  C23C16/56 ,  G02B1/113 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32238 ,  Y10T428/24355

Abstract: A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 μm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10−4.

公开(公告)号：US09720133B2

公开(公告)日：2017-08-01

申请号：US14362847

申请日：2012-12-13

Applicant: Element Six Technologies Limited

Inventor： Paul Nicholas Inglis ,  John Robert Brandon ,  Joseph Michael Dodson ,  Timothy Peter Mollart

IPC: G02B1/02 ,  C23C16/01 ,  C23C16/27 ,  C23C16/458 ,  C23C16/56 ,  C23C16/46 ,  C01B31/06

CPC classification number: G02B1/02 ,  C01B32/25 ,  C23C16/01 ,  C23C16/274 ,  C23C16/4586 ,  C23C16/463 ,  C23C16/56 ,  Y10T428/24355

Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10−4.