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    Free-standing non-planar polycrystalline synthetic diamond components and method of fabrication
    4.
    发明授权
    Free-standing non-planar polycrystalline synthetic diamond components and method of fabrication 有权
    独立的非平面多晶合成金刚石组件和制造方法

    公开(公告)号：US09210972B2

    公开(公告)日：2015-12-15

    申请号：US14401958

    申请日：2013-05-23

    Applicant: Element Six Technologies Limited

    Inventor： Stephanie Liggins ,  John Robert Brandon ,  Christopher John Howard Wort ,  Neil Perkins ,  Paul Nicholas Inglis ,  Mark Robin McClymont

    IPC: C23C16/01 ,  A44C17/00 ,  C23C16/27 ,  H04R7/12 ,  H04R31/00 ,  C23C16/458

    CPC classification number: A44C17/007 ,  C23C16/01 ,  C23C16/27 ,  C23C16/274 ,  C23C16/458 ,  H04R7/127 ,  H04R31/003 ,  H04R2307/023 ,  Y10T428/21 ,  Y10T428/24355

    Abstract: A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness Ra no more than 50 nm, wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected onto a plane of no less than 5 mm and is substantially crack free over at least a central region thereof, wherein the central region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component, wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline CVD synthetic diamond component and extend greater than 2 mm in length.

    Abstract translation: 一种独立的非平面多晶CVD合成金刚石组分，其包含成核面和生长面，所述成核面包含比生长面更小的晶粒，成核面的表面粗糙度Ra不大于50nm，其中， 当非投影到不小于5mm的平面上并且在至少其中心区域上基本上无裂纹时，其非常平坦的多晶CVD合成金刚石组分具有最长的线性尺寸，其中中心区域至少为70％ 独立非平面多晶CVD合成金刚石组分的总面积，其中中心区域没有与独立的非平面多晶CVD合成金刚石组分的两个主要表面相交并且长度大于2mm的裂纹 。

    LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAOND WINDOW
    5.
    发明申请
    LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAOND WINDOW 审中-公开
    大面积光学质量合成多晶二极管窗口

    公开(公告)号：US20140349068A1

    公开(公告)日：2014-11-27

    申请号：US14362847

    申请日：2012-12-13

    Applicant: Element Six Technologies Limited

    Inventor： Paul Nicholas Inglis ,  John Robert Brandon ,  Joseph Michael Dodson ,  Timothy Peter Mollart

    IPC: G02B1/02 ,  C01B31/06

    CPC classification number: G02B1/02 ,  C01B32/25 ,  C23C16/01 ,  C23C16/274 ,  C23C16/4586 ,  C23C16/463 ,  C23C16/56 ,  Y10T428/24355

    Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10−4.

    Abstract translation: 包括：最大直线尺寸等于或大于70mm的多晶化学气相沉积（CVD）金刚石晶片; 厚度等于或大于1.3mm; 以及在多晶CVD金刚石晶片的至少中心区域上在室温（标称为298K）测量的以下特征中的一个或两个，所述中心区域是圆形的，以多晶CVD金刚石晶片的中心点为中心，并且具有 多晶CVD金刚石晶片的最大直线尺寸的至少70％的直径：10.6μm处的吸收系数＆lt; 0.2cm -1; 和145GHz的介电损耗系数，tanδ＆nlE; 2×10-4。

    FREE-STANDING NON-PLANAR POLYCRYSTALLINE SYNTHETIC DIAMOND COMPONENTS AND METHOD OF FABRICATION
    8.
    发明申请
    FREE-STANDING NON-PLANAR POLYCRYSTALLINE SYNTHETIC DIAMOND COMPONENTS AND METHOD OF FABRICATION 审中-公开
    无平面非平面多晶合成金刚石组件和制造方法

    公开(公告)号：US20150110987A1

    公开(公告)日：2015-04-23

    申请号：US14401958

    申请日：2013-05-23

    Applicant: Element Six Technologies Limited

    Inventor： Stephanie Liggins ,  John Robert Brandon ,  Christopher John Howard Wort ,  Neil Perkins ,  Paul Nicholas Inglis ,  Mark Robin McClymont

    IPC: A44C17/00 ,  C23C16/27 ,  C23C16/01

    CPC classification number: A44C17/007 ,  C23C16/01 ,  C23C16/27 ,  C23C16/274 ,  C23C16/458 ,  H04R7/127 ,  H04R31/003 ,  H04R2307/023 ,  Y10T428/21 ,  Y10T428/24355

    Abstract: A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness Ra no more than 50 nm, wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected onto a plane of no less than 5 mm and is substantially crack free over at least a central region thereof, wherein the central region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component, wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline CVD synthetic diamond component and extend greater than 2 mm in length.

    Abstract translation: 一种独立的非平面多晶CVD合成金刚石组分，其包含成核面和生长面，所述成核面包含比生长面更小的晶粒，成核面的表面粗糙度Ra不大于50nm，其中， 当非投影到不小于5mm的平面上并且在至少其中心区域上基本上无裂纹时，其非常平坦的多晶CVD合成金刚石组分具有最长的线性尺寸，其中中心区域至少为70％ 独立非平面多晶CVD合成金刚石组分的总面积，其中中心区域没有与独立的非平面多晶CVD合成金刚石组分的两个主要表面相交并且长度大于2mm的裂纹 。

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