公开(公告)号：US10651045B2

公开(公告)日：2020-05-12

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  C30B33/10

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.