公开(公告)号：US20190074188A1

公开(公告)日：2019-03-07

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US10577567B2

公开(公告)日：2020-03-03

申请号：US15821217

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Makonnen Payne ,  Emanuel I. Cooper ,  WonLae Kim ,  Eric Hong ,  Sean Kim

IPC: C11D7/32 ,  C11D3/33 ,  C11D7/36 ,  C11D3/00 ,  G03F7/42 ,  C11D11/00 ,  C11D1/62 ,  C11D3/06 ,  C11D3/20 ,  C11D3/28 ,  C11D3/39 ,  C11D3/43 ,  H01L21/02

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.

公开(公告)号：US10651045B2

公开(公告)日：2020-05-12

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  C30B33/10

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US20180148669A1

公开(公告)日：2018-05-31

申请号：US15821217

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Makonnen Payne ,  Emmanuel I. Cooper ,  WonLae Kim ,  Eric Hong ,  Sean Kim

IPC: C11D3/33 ,  C11D1/62 ,  C11D3/28 ,  C11D3/06 ,  C11D3/20 ,  C11D3/43 ,  C11D3/39 ,  H01L21/02

CPC classification number: C11D3/33 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/06 ,  C11D3/2068 ,  C11D3/2082 ,  C11D3/28 ,  C11D3/3942 ,  C11D3/43 ,  C11D7/3209 ,  C11D7/36 ,  C11D11/0047 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02068

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.