摘要:
A metal film and a doped a-Si film are deposited on a glass substrate, and successively etched by photolithography using the same resist pattern, to form a metal electrode and doped a-Si layers. The doped a-Si layers thus formed are then re-etched to remove portions protruding from the metal electrode. Then, a non-doped a-Si layer and a transparent electrode are successively formed on the doped a-Si layer. A protection film may additionally be deposited on the glass substrate before the deposition of the metal film.
摘要:
The present invention provides a multiple bus control device and others which can also be applied to access control by a signal having a directional propagation property for implementing various communication between/among modules. Each of plural modules makes a request for communication to a multiple bus control device by sending communication request information for specifying one or more communication partner modules to the multiple bus control device. The multiple bus control device checks an idle state of a module to be communicated and an idle channel in a multiple bus based upon received communication request information and permits communication between a module which sends communication request information using the idle channel and a communication partner module specified in the communication request information.
摘要:
An optical-signal transmission apparatus and method for optical-signal transmission, or a signal processing apparatus for signal processing including optical-signal transmission. A number of terminals (circuit boards and the like) are connected, and communication can be freely performed among the terminals. A plurality of transmission nodes input optical signals having different light intensity levels into an optical transmission medium. A desired signal is separated and extracted from a multiplex signal where these optical signals transmitted from a reception node are overlaid.
摘要:
An image sensor is provided with a plurality of photodiodes each having a better forward-current responsiveness and a smaller dark current in the reverse direction. Each of the photodiodes includes a two-layered photoelectric conversion layer made of non-doped hydrogenated amorphous silicon. One of these two layers, which has an interface that prevents electrons from escaping when photogenerated electric charge is stored, is deposited at a lower temperature than the other. The photodiodes are arranged in rows on a transparent electrode. The photodiodes operate in pairs, each pair corresponding to one picture element and having a first photodiode connected to a second photodiode in series, with opposite polarity. All the first photodiodes are connected to a detecting circuit and all the second photodiodes are connected to a pulse generating circuit.
摘要:
An image sensor having a linear array of a plurality of photodetecting element groups each including a plurality of photodetecting elements each consisting of first and second photo diodes connected in series and oppositely in polarity, in which read pulses are applied sequentially to the second photo diodes of the photodetecting elements of each photodetecting element group by a matrix drive system, and image signals are read by a read circuit connected to the first photo diodes of the photodetecting elements. In the image sensor, first capacitor portions are connected to the second photo diodes of the photodetecting elements. A first shift register is connected to the first capacitor portions for each photodetecting element group. The first shift register sequentially applies drive pulses to the photodetecting element groups. Second capacitor portions are connected to the second photo diodes of the photodetecting elements. A second shift register is connected to the second capacitor portions in a matrix fashion. The second shift register sequentially applies read pulses to the respective photodetecting elements. A leak unit is coupled with the second photo diodes of the photodetecting elements.