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100 条记录 (耗时 0.036 秒)

    Heat treating device and heat treating method
    15.
    发明授权
    Heat treating device and heat treating method 有权
    热处理装置及热处理方法

    公开(公告)号：US06444940B1

    公开(公告)日：2002-09-03

    申请号：US09890328

    申请日：2001-07-30

    申请人： Takanori Saito ,  Hisaei Osanai ,  Toshiyuki Makiya

    发明人： Takanori Saito ,  Hisaei Osanai ,  Toshiyuki Makiya

    IPC分类号： F27B514

    CPC分类号： H01L21/67109 ,  C23C16/46

    摘要： The heat treatment apparatus has the reaction vessel and the holding tool contained in the reaction vessel for holding a plurality of objects to be processed. The lower end of the reaction vessel is closed by the cover and the insulating unit is installed between the cover and the holding tool. On the top of the insulating unit, the heating unit having a heating resistor composed of a carbon material of high-purity sealed in a quartz plate is installed. Heat insulators are installed under the heating unit. The insulating unit is fixed to the cover, and the revolving shaft for rotating the holding tool passes in the center of the insulating unit, and the electric feeding line member for feeding electric power to the heating unit is arranged outside of the insulating unit.

    摘要翻译： 热处理装置具有容纳在反应容器中的用于保持多个待处理物体的反应容器和保持工具。 反应容器的下端由盖封闭，绝缘单元安装在盖和保持工具之间。 在绝缘单元的顶部，安装具有由密封在石英板中的高纯度碳材料构成的加热电阻器的加热单元。 热绝缘子安装在加热单元下。 绝缘单元固定在盖上，用于旋转保持工具的旋转轴穿过绝缘单元的中心，并且用于将电力馈送到加热单元的馈电线构件设置在绝缘单元的外部。

    Heat treating device
    16.
    发明授权
    Heat treating device 有权
    热处理装置

    公开(公告)号：US07141765B2

    公开(公告)日：2006-11-28

    申请号：US10473248

    申请日：2002-03-20

    申请人： Toshiyuki Makiya ,  Takanori Saito ,  Karuki Eickmann ,  Sanjeev Kaushal ,  Anthony Dip ,  David L. O'meara

    发明人： Toshiyuki Makiya ,  Takanori Saito ,  Karuki Eickmann ,  Sanjeev Kaushal ,  Anthony Dip ,  David L. O'meara

    IPC分类号： H05B1/02 ,  A21B1/00

    CPC分类号： G01K7/04 ,  G01K1/20

    摘要： A antireflective film 50 is formed on a thermocouple 42 arranged in a processing vessel 1 of a heat treatment apparatus in order to improve the transient response characteristics of the thermocouple 42. In a typical embodiment, the thermocouple 42 is made by connecting a platinum wire 43A and a platinum-rhodium alloy wire 43B, and the antireflective film 50 is composed by stacking a silicon nitride layer 50C, silicon layer 50B and a silicon nitride layer 50A in that order.

    摘要翻译： 为了改善热电偶42的瞬态响应特性，在设置在热处理装置的处理容器1中的热电偶42上形成防反射膜50。 在一个典型的实施例中，热电偶42是通过连接铂线43A和铂 - 铑合金线43B制成的，并且抗反射膜50由叠氮化硅层50C，硅层50B和硅 氮化物层50A。

    Heat treatment apparatus
    17.
    发明授权
    Heat treatment apparatus 有权
    热处理设备

    公开(公告)号：US07311520B2

    公开(公告)日：2007-12-25

    申请号：US10528704

    申请日：2003-08-29

    申请人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    发明人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    IPC分类号： F27D11/00

    CPC分类号： H01L21/67109

    摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.

    摘要翻译： 本发明是一种热处理单元，包括：上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部，形成在反应管的上部，气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元，用于加热由要处理的基板支撑构件支撑的待处理基板。 所述加热单元具有：设置在所述反应管周围的第一加热部，配置在所述排气单元连接部周围的第二加热部，配置在所述反应管的上部的第三加热部， 反应管的下部，以及配置在被处理基板的支撑部件的下方的第五加热部。

    Heat treatment system
    18.
    发明授权
    Heat treatment system 失效
    热处理系统

    公开(公告)号：US07102104B2

    公开(公告)日：2006-09-05

    申请号：US10505863

    申请日：2002-11-25

    申请人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    发明人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    IPC分类号： F27B5/14

    CPC分类号： H01L21/67109

    摘要： The present invention is a thermal processing unit that includes: a tubular processing container; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a process-gas introducing unit that introduces a predetermined process gas into the processing container; a heating unit provided in the processing container, the heating unit heating the plurality of objects to be processed held by the object-to-be-processed holding unit when the object-to-be-processed holding unit is inserted into the processing container; and a container cooling unit that cools an outside wall surface of the processing container.

    摘要翻译： 本发明是一种热处理单元，其包括：管状处理容器; 待处理的待处理的保持单元，其以层状的方式保持待处理的多个对象，并且可以被插入到处理容器中并从处理容器中取出; 将预定的处理气体引入到处理容器内的处理气体导入部; 设置在处理容器中的加热单元，当待处理保持单元插入处理容器中时，加热单元将待处理保持单元保持的多个待处理对象加热; 以及冷却处理容器的外壁表面的容器冷却单元。

    Heat treatment system
    19.
    发明申请
    Heat treatment system 失效
    热处理系统

    公开(公告)号：US20050121432A1

    公开(公告)日：2005-06-09

    申请号：US10505863

    申请日：2002-11-25

    申请人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    发明人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    IPC分类号： H01L21/28 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/324 ,  F27B5/14 ,  F27D11/00

    CPC分类号： H01L21/67109

    摘要： The present invention is a thermal processing unit that includes: a tubular processing container; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a process-gas introducing unit that introduces a predetermined process gas into the processing container; a heating unit provided in the processing container, the heating unit heating the plurality of objects to be processed held by the object-to-be-processed holding unit when the object-to-be-processed holding unit is inserted into the processing container; and a container cooling unit that cools an outside wall surface of the processing container.

    摘要翻译： 本发明是一种热处理单元，其包括：管状处理容器; 待处理的待处理的保持单元，其以层状的方式保持待处理的多个对象，并且可以被插入到处理容器中并从处理容器中取出; 将预定的处理气体引入到处理容器内的处理气体导入部; 设置在处理容器中的加热单元，当待处理保持单元插入处理容器中时，加热单元将待处理保持单元保持的多个待处理对象加热; 以及冷却处理容器的外壁表面的容器冷却单元。

    Heat treatment apparatus
    20.
    发明申请
    Heat treatment apparatus 有权
    热处理设备

    公开(公告)号：US20060021582A1

    公开(公告)日：2006-02-02

    申请号：US10528704

    申请日：2003-08-29

    申请人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    发明人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    IPC分类号： C23C16/00

    CPC分类号： H01L21/67109

    摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.

    摘要翻译： 本发明是一种热处理单元，包括：上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部，形成在反应管的上部，气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元，用于加热由要处理的基板支撑构件支撑的待处理基板。 所述加热单元具有：设置在所述反应管周围的第一加热部，配置在所述排气单元连接部周围的第二加热部，配置在所述反应管的上部的第三加热部， 反应管的下部，以及配置在被处理基板的支撑部件的下方的第五加热部。