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公开(公告)号：US20150349136A1
公开(公告)日：2015-12-03
申请号：US14611142
申请日：2015-01-30
Inventor： Jae Bon KOO , Chan Woo PARK , Soon-Won JUNG , Bock Soon NA , Sang Chul LIM , Sang Seok LEE , Kyoung Ik CHO , Hye Yong CHU
IPC: H01L29/786 , H01L21/428 , H01L21/02 , H01L29/66
CPC classification number: H01L29/78603 , H01L21/428 , H01L21/7813 , H01L27/1218 , H01L27/124 , H01L27/1248 , H01L27/1266 , H01L27/1292 , H01L29/66969 , H01L29/7869
Abstract: Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured. Furthermore, since the thin-film transistor is protected by the device protection element, the deformation of semiconductor devices under flexibility conditions may be prevented, thereby improving the reliability of the semiconductor devices.
Abstract translation: 根据本发明的实施例的制造半导体器件的方法可以包括提供包括布线区域和器件区域的牺牲衬底，在牺牲衬底上依次形成牺牲层和缓冲层，在缓冲器上形成薄膜晶体管 在器件区域内形成围绕薄膜晶体管的器件保护元件，在缓冲层上形成柔性衬底，并通过去除牺牲层来分离牺牲衬底来暴露缓冲层的表面。 由于可以直接使用典型的半导体工艺技术，因此可以提高工艺兼容性，并且可以制造具有高分辨率和高性能的半导体器件。 此外，由于薄膜晶体管被器件保护元件保护，所以可以防止半导体器件在柔性条件下的变形，从而提高半导体器件的可靠性。
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公开(公告)号：US20150171354A1
公开(公告)日：2015-06-18
申请号：US14280578
申请日：2014-05-17
Inventor： Sang Seok LEE , Kyoung Ik CHO , Bock Soon NA , Sang Chul LIM , Chan Woo PARK , Soon-Won JUNG , Jae Bon KOO , Hye Yong CHU
CPC classification number: H01L27/3244 , H01L51/003 , H01L51/0094 , H01L51/0097 , H01L51/56 , Y02E10/549
Abstract: Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.
Abstract translation: 提供一种制造柔性显示装置的方法。 该方法包括将形状记忆合金膜在高于形状记忆温度的温度下将其形状记忆温度保持为形状记忆温度以下的形状记忆合金薄膜，形成柔性基板，在柔性基板上形成显示装置， 形状记忆合金到弯曲形状，以从柔性基底去除形状记忆合金膜。
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公开(公告)号：US20170186876A1
公开(公告)日：2017-06-29
申请号：US15461567
申请日：2017-03-17
Inventor： Kyoung Ik CHO , Jae Bon KOO , Chan Woo PARK , Bock Soon NA , Sang Seok LEE , Sang Chul LIM , Soon-Won JUNG , Hye Yong CHU
IPC: H01L29/786 , H01L21/311 , H01L29/66
CPC classification number: H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
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Patent Agency Ranking
14.发明申请公开(公告)号：US20170053894A1
公开(公告)日：2017-02-23
申请号：US15220145
申请日：2016-07-26
Inventor： Chan Woo PARK , Jae Bon KOO , Bock Soon NA , Rae-Man PARK , Ji-Young OH , Sang Seok LEE , Soon-Won JUNG
IPC: H01L23/00
CPC classification number: H01L24/43 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L2221/6835 , H01L2224/24137 , H01L2924/00014 , H01L2224/45099
Abstract: Provided is a method for manufacturing a stretchable wire, the method including removing a portion of a photoresist layer on a substrate to form a photoresist pattern comprising at least one pattern slit, applying a liquid-phase conductive material on the photoresist pattern to form a liquid-phase conductive structure in the pattern slit, forming a stretchable first insulating layer on the liquid-phase conductive structure, after removing the photoresist pattern, and separating the liquid-phase conductive structure and the first insulating layer from the substrate.
Abstract translation: 本发明提供一种拉伸线的制造方法，其特征在于，除去基板上的光致抗蚀剂层的一部分，形成包含至少一个图案狭缝的光致抗蚀剂图案，在所述光致抗蚀剂图案上涂布液相导电材料，形成液体 在导电结构上形成可拉伸的第一绝缘层，去除光致抗蚀剂图案，并将液相导电结构和第一绝缘层与基片分开。
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公开(公告)号：US20160246151A1
公开(公告)日：2016-08-25
申请号：US15007844
申请日：2016-01-27
Inventor： Ji-Young OH , Jae Bon KOO , Joo Yeon KIM , Bock Soon NA , Chan Woo PARK , Sang Seok LEE , Soon-Won JUNG , Seong-Mok CHO , Hye Yong CHU
IPC: G02F1/155
CPC classification number: G02F1/155 , G02F2001/1519
Abstract: Provided is a color changeable device which includes a first substrate and a second substrate that are spaced apart from each other, a first transparent electrode disposed on the first substrate, a second transparent electrode disposed on the second substrate, an electrochromic layer disposed between the first transparent electrode and the second transparent electrode, an organic layer disposed between the first transparent electrode and the electrochromic layer. The organic layer may include a hole injection layer or an electron injection layer. The organic layer may further include a hole transport layer or an electron transport layer.
Abstract translation: 提供了一种可变色装置，其包括彼此间隔开的第一基板和第二基板，设置在第一基板上的第一透明电极，设置在第二基板上的第二透明电极，设置在第一基板之间的电致变色层 透明电极和第二透明电极，设置在第一透明电极和电致变色层之间的有机层。 有机层可以包括空穴注入层或电子注入层。 有机层还可以包括空穴传输层或电子传输层。
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16.发明申请公开(公告)号：US20150048375A1
公开(公告)日：2015-02-19
申请号：US14243768
申请日：2014-04-02
Inventor： Ji-Young OH , Jae Bon KOO , Sang Chul LIM , Chan Woo PARK , Soon-Won JUNG , Bock Soon NA , Sang Seok LEE , Hye Yong CHU
IPC: H01L29/786 , B29C59/16 , B29C43/02 , B29C59/02
CPC classification number: H01L29/78603 , B29C35/0266 , B29C43/021 , B29C43/18 , B29C43/203 , B29C59/02 , B29C71/04 , B29K2021/00 , B29K2075/00 , B29K2083/00 , H01L27/1218 , H01L27/1225 , H01L27/1262 , H01L29/7869 , Y10T428/19
Abstract: Provided is a method of manufacturing a gradually stretchable substrate. The method includes forming convex regions and concave regions on a top surface of a stretchable substrate by compressing a mold onto the stretchable substrate and forming non-stretchable patterns by filling the concave regions of the stretchable substrate. The stretchable substrate includes a stretchable region defined by the non-stretchable patterns, the non-stretchable patterns have side surfaces in contact with the stretchable region, and the side surfaces of the non-stretchable patterns are formed of protrusions and a non-protrusion between the protrusions repetitively connected to one another.
Abstract translation: 提供一种制造逐渐拉伸基材的方法。 该方法包括通过将模具压缩到可拉伸基底上并在可伸缩基底的凹部填充而形成不可拉伸图案，在可拉伸基底的顶表面上形成凸区域和凹区域。 可拉伸基材包括由不可拉伸图案限定的可拉伸区域，不可拉伸图案具有与可拉伸区域接触的侧表面，并且不可拉伸图案的侧表面由突起和非伸缩图案之间的非突起形成 突起重复地彼此连接。
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公开(公告)号：US20140086289A1
公开(公告)日：2014-03-27
申请号：US13929735
申请日：2013-06-27
Inventor： Sang Seok LEE , Seongdeok AHN , Jae Bon KOO
IPC: H01Q5/02
Abstract: The present invention relates to a radio communication antenna and a radio communication device including the same. The radio communication antenna of the present invention includes first conductive wires extending in opposite directions with respect to a first direction on a substrate to form a dipole antenna, second conductive wires separated from the first conductive wires to be parallel with the first conductive wires, and stubs connected between the first conductive wires and the second conductive wires in a second direction intersecting with the first direction.
Abstract translation: 无线电通信天线和包括该无线电通信天线的无线电通信装置技术领域本发明涉及无线电通信天线和包括该无线电通信天线的无线电通信装置。 本发明的无线电通信天线包括在基板上相对于第一方向相反方向延伸的第一导线，以形成偶极子天线，与第一导线分开的与第一导线平行的第二导线，以及 在与第一方向相交的第二方向上连接在第一导线和第二导线之间的短截线。
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公开(公告)号：US20140084283A1
公开(公告)日：2014-03-27
申请号：US13757699
申请日：2013-02-01
Inventor： Sang Chul LIM , Ji-Young OH , Seongdeok AHN , Kyoung Ik CHO , Sang Seok LEE , Jae Bon KOO
IPC: H01L29/26
CPC classification number: H01L29/263 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696
Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.
Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极，形成与栅电极相邻的有源层，并具有氧化物半导体，在有源层上形成氧供给层，在栅极电极 有源层，形成耦合到有源层的源电极和漏电极，形成覆盖栅电极和栅电介质的平坦化层，形成暴露有源层的孔，并在气氛中对平坦化层进行热处理工艺 的氧气。
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