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    STRETCHABLE DEVICE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    STRETCHABLE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    可扩展设备及其制造方法

    公开(公告)号：US20150173186A1

    公开(公告)日：2015-06-18

    申请号：US14280205

    申请日：2014-05-16

    申请人： Electronics and Telecommunications Research Institute

    发明人： Bock Soon NA ,  Soon-Won JUNG ,  Jae Bon KOO ,  Chan Woo PARK ,  Sang Chul LIM ,  Sang Seok LEE ,  Kyoung Ik CHO ,  Hye Yong CHU

    IPC分类号： H05K1/03 ,  H05K3/10 ,  H05K3/36 ,  H05K3/02

    CPC分类号： H05K1/0283 ,  H05K2201/017 ,  H05K2201/10106 ,  H05K2201/10128 ,  H05K2201/10151 ,  Y10T29/49156 ,  Y10T29/49158 ,  Y10T29/49162

    摘要： Provided is a stretchable devices. The stretchable device includes a first stretchable substrate having a first wavy surface that wrinkles in a first direction; first wiring lines extending along the first wavy surface in the first direction; a second stretchable substrate having a second wavy surface that faces the first wavy surface and wrinkles in a second direction intersecting the first direction, wherein the second stretchable substrate is disposed on the first stretchable substrate; second wiring lines extending along the second wavy surface in the second direction; and interlayer insulating layers disposed on the intersections of the first wiring lines and the second wiring lines and disposed between the first wiring lines and the second wiring lines.

    摘要翻译： 提供了一种可拉伸的装置。 该可拉伸装置包括：具有在第一方向上折皱的第一波状表面的第一可拉伸基底; 第一布线沿着第一方向沿第一波浪形表面延伸; 第二可拉伸基板，具有面向第一波状面的第二波状表面，并且沿与第一方向交叉的第二方向起皱纹，其中第二可拉伸基板设置在第一可拉伸基板上; 第二布线沿第二波形表面沿第二方向延伸; 以及层间绝缘层，其设置在第一布线和第二布线的交点上，并布置在第一布线和第二布线之间。

    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    转印薄膜晶体管及其制造方法

    公开(公告)号：US20130161704A1

    公开(公告)日：2013-06-27

    申请号：US13775280

    申请日：2013-02-25

    申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    发明人： Jae Bon Koo ,  Jong-Hyun AHN ,  Seung Youl KANG ,  Hasan MUSARRAT ,  In-Kyu YOU ,  Kyoung Ik CHO

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150349136A1

    公开(公告)日：2015-12-03

    申请号：US14611142

    申请日：2015-01-30

    申请人： Electronics and Telecommunications Research Institute

    发明人： Jae Bon KOO ,  Chan Woo PARK ,  Soon-Won JUNG ,  Bock Soon NA ,  Sang Chul LIM ,  Sang Seok LEE ,  Kyoung Ik CHO ,  Hye Yong CHU

    IPC分类号： H01L29/786 ,  H01L21/428 ,  H01L21/02 ,  H01L29/66

    CPC分类号： H01L29/78603 ,  H01L21/428 ,  H01L21/7813 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/1292 ,  H01L29/66969 ,  H01L29/7869

    摘要： Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured. Furthermore, since the thin-film transistor is protected by the device protection element, the deformation of semiconductor devices under flexibility conditions may be prevented, thereby improving the reliability of the semiconductor devices.

    摘要翻译： 根据本发明的实施例的制造半导体器件的方法可以包括提供包括布线区域和器件区域的牺牲衬底，在牺牲衬底上依次形成牺牲层和缓冲层，在缓冲器上形成薄膜晶体管 在器件区域内形成围绕薄膜晶体管的器件保护元件，在缓冲层上形成柔性衬底，并通过去除牺牲层来分离牺牲衬底来暴露缓冲层的表面。 由于可以直接使用典型的半导体工艺技术，因此可以提高工艺兼容性，并且可以制造具有高分辨率和高性能的半导体器件。 此外，由于薄膜晶体管被器件保护元件保护，所以可以防止半导体器件在柔性条件下的变形，从而提高半导体器件的可靠性。

    PRESSURE SENSING ELEMENT
    6.
    发明申请
    PRESSURE SENSING ELEMENT 审中-公开

    公开(公告)号：US20180246000A1

    公开(公告)日：2018-08-30

    申请号：US15890846

    申请日：2018-02-07

    申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    发明人： Seong Hyun KIM ,  Su Jae LEE ,  Kyoung Ik CHO ,  Chi-Sun HWANG

    IPC分类号： G01L19/06 ,  G01L9/00

    摘要： Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20140084283A1

    公开(公告)日：2014-03-27

    申请号：US13757699

    申请日：2013-02-01

    申请人： Electronics and Telecommunications Research Institute

    发明人： Sang Chul LIM ,  Ji-Young OH ,  Seongdeok AHN ,  Kyoung Ik CHO ,  Sang Seok LEE ,  Jae Bon KOO

    IPC分类号： H01L29/26

    CPC分类号： H01L29/263 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

    摘要： Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

    摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极，形成与栅电极相邻的有源层，并具有氧化物半导体，在有源层上形成氧供给层，在栅极电极 有源层，形成耦合到有源层的源电极和漏电极，形成覆盖栅电极和栅电介质的平坦化层，形成暴露有源层的孔，并在气氛中对平坦化层进行热处理工艺 的氧气。