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    Organic semiconductor copolymers containing oligothiophene and η-type heteroaromatic units
    11.
    发明授权
    Organic semiconductor copolymers containing oligothiophene and η-type heteroaromatic units 有权
    含有低聚噻吩和异构芳香族单元的有机半导体共聚物

    公开(公告)号：US08053764B2

    公开(公告)日：2011-11-08

    申请号：US12054134

    申请日：2008-03-24

    申请人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    发明人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    IPC分类号： H01L51/54

    CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

    摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    摘要翻译： 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    13.
    发明申请
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号：US20070166871A1

    公开(公告)日：2007-07-19

    申请号：US11508925

    申请日：2006-08-24

    申请人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    发明人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    IPC分类号： H01L51/40 ,  C07D417/14 ,  C07D497/14

    CPC分类号： C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

    摘要： Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    摘要翻译： 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    14.
    发明授权
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号：US07692021B2

    公开(公告)日：2010-04-06

    申请号：US11508925

    申请日：2006-08-24

    申请人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    发明人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    IPC分类号： C07D277/20 ,  C07D277/60

    CPC分类号： C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

    摘要： Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    摘要翻译： 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

    Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain
    15.
    发明授权
    Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain 有权
    在骨架链中含有喹喔啉环的有机薄膜晶体管的有机半导体聚合物

    公开(公告)号：US07030409B2

    公开(公告)日：2006-04-18

    申请号：US10844380

    申请日：2004-05-13

    申请人： Bang Lin Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  In Nam Kang

    发明人： Bang Lin Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  In Nam Kang

    IPC分类号： H01L21/00

    CPC分类号： H01L51/0043 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C08G73/0694 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0545

    摘要： Disclosed herein is a composite-structured organic semiconductor polymer for an organic thin film transistor which contains quinoxaline rings in the backbone of the polymer. According to the organic semiconductor polymer, since quinoxaline rings having n-type semiconductor characteristics, such as high electron affinity, are incorporated into a polythiophene having p-type semiconductor characteristics, the organic semiconductor polymer simultaneously exhibits both p-type and n-type semiconductor characteristics. In addition, the polythienylquinoxaline derivative exhibits high solubility in organic solvents, co-planarity and stability in air. Furthermore, when the polythienylquinoxaline derivative is used as an active layer of an organic thin film transistor, the organic thin film transistor exhibits a high charge carrier mobility and a low off-state leakage current.

    摘要翻译： 本文公开了一种用于有机薄膜晶体管的复合结构有机半导体聚合物，其在聚合物的主链中含有喹喔啉环。 根据有机半导体聚合物，由于具有高电子亲和性的n型半导体特性的喹喔啉环被并入具有p型半导体特性的聚噻吩中，所以有机半导体聚合物同时呈现p型和n型半导体 特点 此外，聚噻吩基喹喔啉衍生物在有机溶剂中表现出高溶解度，在空气中的共平面性和稳定性。 此外，当使用聚噻吩基喹喔啉衍生物作为有机薄膜晶体管的有源层时，有机薄膜晶体管表现出高的载流子迁移率和低截止状态的漏电流。

    Organic thin film transistor(s) and method(s) for fabricating the same
    19.
    发明授权
    Organic thin film transistor(s) and method(s) for fabricating the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US07547574B2

    公开(公告)日：2009-06-16

    申请号：US11297396

    申请日：2005-12-09

    申请人： Hyun Jung Park ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  Jung Seok Hahn ,  Tae Woo Lee

    发明人： Hyun Jung Park ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  Jung Seok Hahn ,  Tae Woo Lee

    IPC分类号： H01L51/40

    CPC分类号： H01L51/105 ,  H01L51/0055 ,  H01L51/052

    摘要： Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.

    摘要翻译： 本发明的制造有机薄膜晶体管的示例实施例包括基板，栅电极，栅极绝缘层，金属氧化物源极/漏极和有机半导体层，其中金属氧化物源极/漏极用 包含磺酸基团的自组装单层（SAM）形成化合物。 根据本发明的示例性实施例，源/漏电极的表面可以被修改为更疏水，和/或构成源/漏电极的金属氧化物的功函数可以增加到高于有机半导体的功函数 构成有机半导体层的材料。 根据本发明的一个或多个示例性实施例制造的有机薄膜晶体管可以表现出更高的载流子迁移率。 还公开了包括具有由本发明的示例性实施例制成的有机薄膜晶体管的显示器件的各种示例器件。