NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    1.
    发明申请
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号:US20070166871A1

    公开(公告)日:2007-07-19

    申请号:US11508925

    申请日:2006-08-24

    摘要: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    摘要翻译: 本文公开了NPN型低分子芳环化合物,由这些化合物形成的有机半导体层,其表现出改进的电稳定性,并且使用基于溶液的方法形成这种层的方法,例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜,然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜,该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料,从而改善所得器件的电性能。

    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    2.
    发明授权
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号:US07692021B2

    公开(公告)日:2010-04-06

    申请号:US11508925

    申请日:2006-08-24

    IPC分类号: C07D277/20 C07D277/60

    摘要: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    摘要翻译: 本文公开了NPN型低分子芳环化合物,由这些化合物形成的有机半导体层,其表现出改进的电稳定性,并且使用基于溶液的方法形成这种层的方法,例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜,然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜,该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料,从而改善所得器件的电性能。

    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same
    5.
    发明授权
    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
    有机绝缘体组合物,具有该有机绝缘体组合物的有机绝缘膜,具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法

    公开(公告)号:US08030644B2

    公开(公告)日:2011-10-04

    申请号:US11481843

    申请日:2006-07-07

    IPC分类号: H01L35/24

    摘要: Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.

    摘要翻译: 本发明的实施例涉及有机绝缘体组合物,具有有机绝缘体组合物的有机绝缘膜,具有有机绝缘膜的有机薄膜晶体管,具有有机薄膜晶体管的电子器件及其形成方法。 本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。 提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。 可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质,例如阈值电压和/或电荷载流子迁移率。 有机薄膜晶体管可以有效地用于制造包括液晶显示器(LCD)和/或光伏器件的各种电子器件。