公开(公告)号：US20080237687A1

公开(公告)日：2008-10-02

申请号：US11898037

申请日：2007-09-07

申请人： Sun-il Kim ,  Young-gu Jin ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

发明人： Sun-il Kim ,  Young-gu Jin ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： H01L29/788

CPC分类号： B82Y10/00 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/7881 ,  H01L29/792

摘要： Provided is a flash memory device including a gate structure on a substrate. The flash memory device includes a charge supply layer including a ZnO based material formed between a substrate and a gate structure or formed on the gate structure. Accordingly, the flash memory device can be formed to be of a bottom gate type or of a top gate type by including the charge supply layer. Also, the flash memory device may be realized to be any of a charge trap type and a floating gate type.

摘要翻译： 提供了一种在基板上包括栅极结构的闪存器件。 闪存器件包括电荷供应层，其包括形成在衬底和栅极结构之间或形成在栅极结构上的基于ZnO的材料。 因此，闪存器件可以通过包括电荷供给层而形成为底栅型或顶栅型。 此外，闪存器件可以被实现为电荷陷阱型和浮动栅型中的任一种。

公开(公告)号：US08421070B2

公开(公告)日：2013-04-16

申请号：US12929324

申请日：2011-01-14

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

摘要翻译： 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US08063421B2

公开(公告)日：2011-11-22

申请号：US12007038

申请日：2008-01-04

申请人： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

发明人： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L29/7869

摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管可以包括栅极; 一个通道层; 源极和漏极，源极和漏极由金属形成; 和金属氧化物层，金属氧化物层形成在沟道层与源极和漏极之间。 金属氧化物层可以在沟道层和源极和漏极之间具有逐渐变化的金属含量。

公开(公告)号：US20110101343A1

公开(公告)日：2011-05-05

申请号：US12929324

申请日：2011-01-14

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12 ,  H01L33/16

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70.Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

摘要翻译： 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20110101342A1

公开(公告)日：2011-05-05

申请号：US12929323

申请日：2011-01-14

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12 ,  H01L21/34 ,  H01L33/16

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

公开(公告)号：US20070252147A1

公开(公告)日：2007-11-01

申请号：US11785269

申请日：2007-04-17

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/04

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3)·y(In2O3)·z(ZnO)  Formula 1wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

摘要翻译： 半导体器件可以包括由下面的式1表示的复合物作为有源层。 <？in-line-formula description =“In-line Formulas”end =“lead”？> x（Ga 2 2 O 3 3）y（In < z（ZnO）式1 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中，约0.75 <= x / z <=约3.15，约0.55≤y/z≤约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20080315193A1

公开(公告)日：2008-12-25

申请号：US12149409

申请日：2008-05-01

申请人： Chang-jung Kim ,  Young-soo Park ,  Eun-ha Lee ,  Jae-chul Park

发明人： Chang-jung Kim ,  Young-soo Park ,  Eun-ha Lee ,  Jae-chul Park

IPC分类号： H01L29/22 ,  H01L21/34 ,  C09K13/06 ,  C09K13/08

CPC分类号： C09K13/06 ,  H01L21/467 ,  H01L29/7869

摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.

摘要翻译： 提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触 渠道的各边。 锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

公开(公告)号：US07935964B2

公开(公告)日：2011-05-03

申请号：US12213327

申请日：2008-06-18

申请人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

发明人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

IPC分类号： H01L29/10

CPC分类号： H01L29/7869

摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.

摘要翻译： 提供包括其的氧化物半导体和薄膜晶体管（TFT）。 氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。 薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

公开(公告)号：US20080315200A1

公开(公告)日：2008-12-25

申请号：US12213327

申请日：2008-06-18

申请人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

发明人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

IPC分类号： H01L29/10

CPC分类号： H01L29/7869

摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.

摘要翻译： 提供包括其的氧化物半导体和薄膜晶体管（TFT）。 氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。 薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

公开(公告)号：US20090057663A1

公开(公告)日：2009-03-05

申请号：US12076486

申请日：2008-03-19

申请人： Sun-il Kim ,  Jae-cheol Lee ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Jae-chul Park

发明人： Sun-il Kim ,  Jae-cheol Lee ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L29/78696

摘要： An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.

摘要翻译： 提供氧化物薄膜晶体管和制造氧化物TFT的方法。 所述氧化物薄膜晶体管（TFT）包括：栅极; 形成为对应于所述栅极的沟道，以及具有比所述沟道更高功函数的覆盖层; 设置在栅极和沟道之间的栅极绝缘体; 以及源极和漏极，分别接触封盖层的两侧和通道之间，部分地接合覆盖层的顶表面。