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公开(公告)号:US20170084848A1
公开(公告)日:2017-03-23
申请号:US15272572
申请日:2016-09-22
Inventor: Hanwei Gao , Biwu Ma , Yichuan Ling , Zhao Yuan
IPC: H01L51/00 , C07C209/68 , C07C211/63 , C09K11/02 , C09K11/06
CPC classification number: C07C209/68 , B82Y20/00 , B82Y40/00 , C07C211/63 , C09K11/025 , C09K11/06 , C09K11/664 , C09K2211/10 , C09K2211/188 , H01L51/0037 , H01L51/0042 , H01L51/007 , H01L51/4246 , H01L51/5012 , H01L2251/308 , H05B33/14 , Y02E10/549 , Y02P70/521 , Y10S977/755 , Y10S977/896 , Y10S977/95
Abstract: Provided herein are metal halide perovskite nanoplatelets, methods for making metal halide perovskite nanoplatelets, and devices and composite materials that include metal halide nanoperovskite nanoplatelets. The metal halide perovskite nanoplatelets may be stable at ambient temperature and pressure, thereby easing device fabrication.
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公开(公告)号:US11155471B2
公开(公告)日:2021-10-26
申请号:US16117628
申请日:2018-08-30
Inventor: Hanwei Gao , Biwu Ma , Yichuan Ling , Xi Wang
Abstract: Bandgap-tunable perovskite compositions are provided having the formula CsPb(A)xBy)3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs4Pb(A)xBy)6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.
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公开(公告)号:US10230049B2
公开(公告)日:2019-03-12
申请号:US15868647
申请日:2018-01-11
Inventor: Biwu Ma , Hanwei Gao , Yu Tian , Yichuan Ling
Abstract: Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CH3NH3PbCl3) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing.
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公开(公告)号:US09905765B2
公开(公告)日:2018-02-27
申请号:US15236072
申请日:2016-08-12
Inventor: Biwu Ma , Hanwei Gao , Yu Tian , Yichuan Ling
CPC classification number: H01L51/0034 , C08G2261/512 , C08G2261/91 , H01L51/0026 , H01L51/5056 , H01L2251/301 , H01L2251/5369
Abstract: Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CH3NH3PbCl3) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing.
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公开(公告)号:US20170047530A1
公开(公告)日:2017-02-16
申请号:US15236072
申请日:2016-08-12
Inventor: Biwu Ma , Hanwei Gao , Yu Tian , Yichuan Ling
CPC classification number: H01L51/0034 , C08G2261/512 , C08G2261/91 , H01L51/0026 , H01L51/5056 , H01L2251/301 , H01L2251/5369
Abstract: Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CH3NH3PbCl3) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing.
Abstract translation: 本文提供钙钛矿聚合物膜,形成聚合物 - 钙钛矿膜的方法,以及包括聚合物 - 钙钛矿膜的装置。 聚合物 - 钙钛矿膜可以包括嵌入聚合物基质中的多个氯化铵铵(CH 3 NH 3 PbCl 3)纳米柱晶体。 这些器件可以是光电器件,例如发光二极管,其包括聚合物 - 钙钛矿膜。 器件的聚合物 - 钙钛矿膜可以是器件中的空穴传输层。 制造薄膜的方法可以包括旋转浇铸前体溶液,随后进行热退火。
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