公开(公告)号：US10927446B2

公开(公告)日：2021-02-23

申请号：US16568905

申请日：2019-09-12

Applicant: FUJIFILM Corporation

Inventor： Seigo Nakamura ,  Kenichi Umeda ,  Yuichiro Itai ,  Shinichiro Sonoda

IPC: C23C14/24 ,  C23C14/08 ,  C23C14/18 ,  G02B1/115

Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.

公开(公告)号：US09543143B2

公开(公告)日：2017-01-10

申请号：US14104714

申请日：2013-12-12

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda ,  Atsushi Tanaka ,  Masayuki Suzuki ,  Tatsuya Shimoda

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/66 ,  H01L27/146

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02592 ,  H01L21/02628 ,  H01L22/10 ,  H01L27/14687 ,  H01L27/14698 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm−1 to 1520 cm−1 in an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm−1 to 1450 cm−1 and an infrared wave number range of from more than 1450 cm−1 to 1520 cm−1, a peak positioned within the infrared wave number range of from 1380 cm−1 to 1450 cm−1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm−1 to 1750 cm−1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.

Abstract translation: 无定形氧化物薄膜的制造方法包括：在含有有机成分的第一氧化物前体膜中，在低于有机成分的热解温度的温度下选择性地改变有机成分的结合状态的预处理工序 和In，以获得第二氧化物前体膜，其中当通过利用傅立叶变换红外光谱进行测量而获得的红外吸收光谱中的1380cm -1至1520cm -1的红外波数范围被分为红外 波数范围为1380cm -1至1450cm -1，红外波数范围为1450cm -1以上1520cm -1以上，红外波数范围为1380cm -1〜 1450cm -1表现出红外吸收光谱的最大值，红外波数范围为1350cm-1至1750cm -1; 以及去除残留在第二氧化物前体膜中的有机成分的后处理工艺，将第二氧化物前体膜转变为含有In的无定形氧化物薄膜。