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11.发明申请公开(公告)号：US20140167198A1
公开(公告)日：2014-06-19
申请号：US14185920
申请日：2014-02-21
申请人： Michael E. Hoenk , Frank Greer , Shouleh Nikzad
发明人： Michael E. Hoenk , Frank Greer , Shouleh Nikzad
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14806 , H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/02161 , H01L31/101 , H01L31/1804 , Y02E10/547
摘要： A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a region of a silicon oxide surface that is left uncovered, while deposition is inhibited in another region by a contact shadow mask. The Al2O3 layer is an antireflection coating. In addition, the Al2O3 layer can also provide a chemically resistant separation layer between the silicon oxide surface and additional antireflection coating layers. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar antireflection properties and chemical protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.
摘要翻译： 背照式硅光电检测器具有沉积在未被覆盖的氧化硅表面的区域上的Al 2 O 3层，同时通过接触阴影掩模在另一区域中抑制沉积。 Al2O3层是抗反射涂层。 此外，Al 2 O 3层还可以在氧化硅表面和附加的抗反射涂层之间提供耐化学腐蚀的分离层。 在一个实施例中，硅光电检测器在氧化硅表面附近（在几纳米内）具有δ-掺杂层。 预期Al 2 O 3层可以为使用其他方法（例如MBE，离子注入和CVD沉积）制造的掺杂层提供类似的抗反射性质和化学保护。
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12.发明授权公开(公告)号：US08680637B2
公开(公告)日：2014-03-25
申请号：US13167677
申请日：2011-06-23
申请人： Michael E. Hoenk , Frank Greer , Shouleh Nikzad
发明人： Michael E. Hoenk , Frank Greer , Shouleh Nikzad
IPC分类号： H01L21/02
CPC分类号： H01L31/02161 , H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/101 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.
摘要翻译： 背照式硅光电检测器具有沉积在氧化硅表面上的Al 2 O 3层，其接收待检测的电磁辐射。 Al2O3层具有沉积在其上的抗反射涂层。 Al2O3层在氧化硅表面和抗反射涂层之间提供耐化学腐蚀的分离层。 Al2O3层足够薄，使其光学无害。 在深紫外辐射下，氧化硅层和抗反射涂层不会发生化学反应。 在一个实施例中，硅光电检测器在氧化硅表面附近（在几纳米内）具有δ-掺杂层。 预期Al 2 O 3层可以为使用诸如MBE，离子注入和CVD沉积的其它方法制造的掺杂层提供类似的保护。
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公开(公告)号：US20110256655A1
公开(公告)日：2011-10-20
申请号：US13026119
申请日：2011-02-11
申请人： Shouleh Nikzad , Chris Martin , Michael E. Hoenk
发明人： Shouleh Nikzad , Chris Martin , Michael E. Hoenk
IPC分类号： H01L31/18 , H01L27/146
CPC分类号： H01L31/03529 , H01L27/14643 , H01L27/14694 , H01L27/14806 , H01L31/0304 , H01L31/107 , H01L31/1844 , H02N2/18 , Y02E10/544
摘要： Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.
摘要翻译： 提供了高效，低能量，低光照成像器和光电探测器。 特别地，一种新型的Della-Doped Electron Bombard Array（DDEBA）光电探测器，其将通过使用能够检测低通滤波器的薄型成像器来改善性能，从而降低传统成像系统的尺寸，质量，功率，复杂性和成本， 能量电子具有高增益，噪声低。
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公开(公告)号：US08582805B2
公开(公告)日：2013-11-12
申请号：US12265387
申请日：2008-11-05
CPC分类号： G06K9/3233 , G06T7/246 , G06T2207/10021 , G06T2207/30252
摘要： Apparatuses and methods are disclosed that create a synthetic fovea in order to identify and highlight interesting portions of an image for further processing and rapid response. Synthetic foveal imaging implements a parallel processing architecture that uses reprogrammable logic to implement embedded, distributed, real-time foveal image processing from different sensor types while simultaneously allowing for lossless storage and retrieval of raw image data. Real-time, distributed, adaptive processing of multi-tap image sensors with coordinated processing hardware used for each output tap is enabled. In mosaic focal planes, a parallel-processing network can be implemented that treats the mosaic focal plane as a single ensemble rather than a set of isolated sensors. Various applications are enabled for imaging and robotic vision where processing and responding to enormous amounts of data quickly and efficiently is important.
摘要翻译： 公开了创建合成中央凹的装置和方法，以便识别和突出图像的有趣部分用于进一步处理和快速响应。 合成中央凹成像实现并行处理架构，其使用可重编程逻辑来实现来自不同传感器类型的嵌入式，分布式实时中心凹图像处理，同时允许对原始图像数据进行无损存储和检索。 实现，分布式，自适应处理多点图像传感器，并配合每个输出抽头使用的处理硬件。 在马赛克焦平面中，可以实现将马赛克焦平面视为单一集合而不是一组隔离传感器的并行处理网络。 各种应用都可用于成像和机器人视觉，其中快速有效地处理和响应大量数据很重要。
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公开(公告)号：US08558234B2
公开(公告)日：2013-10-15
申请号：US13026119
申请日：2011-02-11
申请人： Shouleh Nikzad , Chris Martin , Michael E. Hoenk
发明人： Shouleh Nikzad , Chris Martin , Michael E. Hoenk
IPC分类号： H01L31/00
CPC分类号： H01L31/03529 , H01L27/14643 , H01L27/14694 , H01L27/14806 , H01L31/0304 , H01L31/107 , H01L31/1844 , H02N2/18 , Y02E10/544
摘要： Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.
摘要翻译： 提供了高效，低能量，低光照成像器和光电探测器。 特别地，一种新型的Della-Doped Electron Bombard Array（DDEBA）光电探测器，其将通过使用能够检测低通滤波器的薄型成像器来改善性能，从而降低传统成像系统的尺寸，质量，功率，复杂性和成本， 能量电子具有高增益，噪声低。
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公开(公告)号：US06403963B1
公开(公告)日：2002-06-11
申请号：US09162918
申请日：1998-09-29
IPC分类号： H01L29796
CPC分类号： H01L31/115
摘要： The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.
摘要翻译： 处理减薄的带电耦合器件（CCD）的后表面以消除背侧照明期间出现在常规薄型CCD中的背面势阱。 CCD的背面包括限定在晶体半导体的小于一个单层的高浓度掺杂的δ层。 薄型三角形掺杂CCD用于检测穿透小于1.0nm的CCD的非常低能量的粒子，包括具有小于1000eV的能量的电子和具有小于10keV的能量的质子。
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公开(公告)号：US6107619A
公开(公告)日：2000-08-22
申请号：US114346
申请日：1998-07-13
CPC分类号： H01L27/14634
摘要： A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.
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18.发明授权公开(公告)号：US06346700B1
公开(公告)日：2002-02-12
申请号：US09546837
申请日：2000-04-11
IPC分类号： H01L3100
CPC分类号： H01L27/14634
摘要： A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.
摘要翻译： 提供了一种三角掺杂混合高级检测器（HAD），其结合了至少四种类型的技术，以产生能量范围从几百电子伏特（eV）到超过几百万eV的能量粒子的检测器。 检测器对从可见光到X射线的光子敏感。 检测器对大约10keV到几百eV的高能量敏感性。 该检测器以毫瓦功率消耗运行，并允许阵列的非顺序读出，实现各种先进的读出方案。
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公开(公告)号：US08697474B2
公开(公告)日：2014-04-15
申请号：US13006209
申请日：2011-01-13
申请人： Frank Greer , Shouleh Nikzad
发明人： Frank Greer , Shouleh Nikzad
IPC分类号： H01L21/00 , H01L31/0232
CPC分类号： G02B5/208 , H01L31/02165 , H01L31/02168 , Y02E10/50
摘要： Embodiments of the invention provide for fabricating a filter, for electromagnetic radiation, in at least three ways, including (1) fabricating integrated thin film filters directly on a detector; (2) fabricating a free standing thin film filter that may be used with a detector; and (3) treating an existing filter to improve the filter's properties.
摘要翻译： 本发明的实施例提供以至少三种方式制造用于电磁辐射的滤波器，包括（1）直接在检测器上制造集成薄膜滤波器; （2）制造可与检测器一起使用的独立的薄膜过滤器; 和（3）处理现有的过滤器以改善过滤器的性能。
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公开(公告)号：US20110169119A1
公开(公告)日：2011-07-14
申请号：US13006209
申请日：2011-01-13
申请人： Frank Greer , Shouleh Nikzad
发明人： Frank Greer , Shouleh Nikzad
IPC分类号： H01L31/0232 , G02B5/22 , B26F3/00 , B08B7/00
CPC分类号： G02B5/208 , H01L31/02165 , H01L31/02168 , Y02E10/50
摘要： Embodiments of the invention provide for fabricating a filter, for electromagnetic radiation, in at least three ways, including (1) fabricating integrated thin film filters directly on a detector; (2) fabricating a free standing thin film filter that may be used with a detector; and (3) treating an existing filter to improve the filter's properties.
摘要翻译： 本发明的实施例提供以至少三种方式制造用于电磁辐射的滤波器，包括（1）直接在检测器上制造集成的薄膜滤波器; （2）制造可与检测器一起使用的独立的薄膜过滤器; 和（3）处理现有的过滤器以改善过滤器的性能。
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