公开(公告)号：US20150021712A1

公开(公告)日：2015-01-22

申请号：US13946103

申请日：2013-07-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Gerd Zschaetzsch ,  Stefan Flachowsky ,  Dominic Thurmer

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L27/1211 ,  H01L21/2254 ,  H01L21/823431 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/66553 ,  H01L29/6659 ,  H01L29/66803 ,  H01L29/7834 ,  H01L29/785

Abstract: The present disclosure provides in various aspects methods of forming a semiconductor device, methods for forming a semiconductor device structure, a semiconductor device and a semiconductor device structure. In some illustrative embodiments herein, a gate structure is formed over a non-planar surface portion of a semiconductor material provided on a surface of a substrate. A doped spacer-forming material is formed over the gate structure and the semiconductor material and dopants incorporated in the doped spacer-forming material are diffused into the semiconductor material close to a surface of the semiconductor material so as to form source/drain extension regions. The fabricated semiconductor devices may be multi-gate devices and, for example, comprise finFETs and/or wireFETs.

Abstract translation: 本公开在各方面提供了形成半导体器件的方法，形成半导体器件结构的方法，半导体器件和半导体器件结构。 在本文的一些说明性实施例中，栅极结构形成在设置在基板的表面上的半导体材料的非平面表面部分上。 掺杂的间隔物形成材料形成在栅极结构上，并且半导体材料和并入掺杂的间隔物形成材料中的掺杂剂被扩散到靠近半导体材料的表面的半导体材料中，以形成源极/漏极延伸区域。 制造的半导体器件可以是多栅极器件，并且例如包括finFET和/或wireFET。