公开(公告)号：US10741497B2

公开(公告)日：2020-08-11

申请号：US15897416

申请日：2018-02-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang

IPC: H01L29/94 ,  H01L23/535 ,  H01L23/538 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contact and interconnect structures and methods of manufacture. The structure includes: a single damascene contact structure in electrical contact with a contact of a source region or drain region; and a single damascene interconnect structure in a wiring layer and in direct electrical contact with the single damascene contact structure.

公开(公告)号：US10347529B2

公开(公告)日：2019-07-09

申请号：US15724431

申请日：2017-10-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Keith Kwong Hon Wong

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes a metallization feature comprising a fill material and formed within a dielectric layer; at least one cap covering the fill material of the metallization feature, the at least one cap is comprised of a material different than the fill material of the metallization feature; and an interconnect structure in electrical contact with the metallization feature.

公开(公告)号：US20180138123A1

公开(公告)日：2018-05-17

申请号：US15351750

申请日：2016-11-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Keith Kwong Hon Wong

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/28556 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76879 ,  H01L21/76889 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295

Abstract: Aspects of the present disclosure include a semiconductor device which includes a dielectric layer deposited over a conductive region and an interconnect electrically connecting the conductive region with a top surface of the dielectric layer. The interconnect includes a barrier layer extending from an interior of the dielectric layer to the conductive region and covering the conductive region. The barrier layer encases a cobalt plug. The interconnect includes a tungsten cap on an upper surface of the cobalt plug. The tungsten cap is coplanar with an upper surface of the dielectric layer. A method of manufacturing the semiconductor device is also provided.