公开(公告)号：US10403574B2

公开(公告)日：2019-09-03

申请号：US15820602

申请日：2017-11-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Atsushi Ogino ,  Justin C. Long

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485

Abstract: A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.

公开(公告)号：US20190181044A1

公开(公告)日：2019-06-13

申请号：US16279550

申请日：2019-02-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim Shih-Chun Liang

IPC: H01L21/77 ,  H01L27/32 ,  H01L27/12 ,  H01L21/265 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/77 ,  H01L21/02019 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/2652 ,  H01L21/32 ,  H01L21/321 ,  H01L21/76816 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/12

Abstract: A contact element structure of a semiconductor device includes an opening positioned in an insulating material layer, the insulating material layer being positioned above a semiconductor substrate, and the opening having an upper sidewall portion, a lower sidewall portion, and a bottom surface portion. An insulating liner portion is positioned within the opening, the insulating liner portion covering the insulating material layer at the upper sidewall portion but not covering the insulating material layer at the lower sidewall portion. A contact liner is positioned within the opening and covers the insulating liner portion, the insulating material layer at the lower sidewall portion, and the insulating material layer at the bottom surface portion, and a conductive material is positioned in the opening and covers the contact liner.

公开(公告)号：US20180166385A1

公开(公告)日：2018-06-14

申请号：US15893193

申请日：2018-02-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Keith Kwong Hon Wong

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/28556 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76879 ,  H01L21/76889 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295

Abstract: Aspects of the present disclosure include a method for forming a contact on a semiconductor device, the semiconductor device including a conductive region disposed over a substrate, the method comprising: depositing a dielectric material on the substrate; forming an opening in the dielectric material to expose the conductive region; forming a barrier layer on a lower surface and sidewalls of the opening in the dielectric material, the barrier layer terminating below an upper surface of the dielectric material and surrounding a lower portion of the opening; depositing cobalt in the lower portion of the opening, the cobalt terminating at an upper surface of the barrier layer; depositing tungsten to fill the opening to at least the upper surface of the dielectric material; and planarizing the upper surface of the dielectric material with the tungsten in the opening.

公开(公告)号：US20170213792A1

公开(公告)日：2017-07-27

申请号：US15006426

申请日：2016-01-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Joyeeta Nag ,  Jim Shih-Chun Liang ,  Domingo A. Ferrer Luppi ,  Atsushi Ogino ,  Andrew H. Simon ,  Michael P. Chudzik

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53252 ,  H01L23/53266

Abstract: Aspects of the present disclosure include integrated circuit (IC) structures with metal plugs therein, and methods of forming the same. An IC fabrication method according to embodiments of the present disclosure can include: providing a structure including a via including a bulk semiconductor material therein, wherein the via further includes a cavity extending from a top surface of the via to an interior surface of the via, and wherein a portion of the bulk semiconductor material defines at least one sidewall of the cavity; forming a first metal level on the via, wherein the first metal level includes a contact opening positioned over the cavity of the via; forming a metal plug within the cavity to the surface of the via, such that the metal plug conformally contacts a sidewall of the cavity and the interior surface of the via, wherein the metal plug is laterally distal to an exterior sidewall of the via; and forming a contact within the contact opening of the first metal level.

公开(公告)号：US20180350679A1

公开(公告)日：2018-12-06

申请号：US15608506

申请日：2017-05-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim Shih-Chun Liang

IPC: H01L21/77 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/768 ,  H01L21/265 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L21/77 ,  H01L21/02019 ,  H01L21/02118 ,  H01L21/2652 ,  H01L21/76816 ,  H01L21/823425 ,  H01L27/12 ,  H01L27/3253

Abstract: The present disclosure provides a contact element of a semiconductor device structure, wherein an opening is formed in an insulating material layer, the insulating material layer being provided over a semiconductor substrate. Within a lower portion of the opening, a contact liner portion is formed, the contact liner portion covering a bottom of the opening and partially covering a lower sidewall portion of the lower portion of the opening such that an upper sidewall portion at an upper portion of the opening is exposed to further processing. An insulating liner portion is formed within the opening, the insulating liner portion covering the exposed upper sidewall portion. Furthermore, a contact liner is formed within the opening, the contact liner covering the contact liner portion in the insulating liner portion, and the opening is filled with a conductive material.

公开(公告)号：US09633946B1

公开(公告)日：2017-04-25

申请号：US15140121

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Domingo A. Ferrer ,  Kathryn T. Schonenberg ,  Shahrukh Akbar Khan ,  Wei-Tsu Tseng

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76814 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/7688 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53266

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seamless metallization structures and methods of manufacture. A structure includes: a contact opening formed in an oxide material and in alignment with an underlying structure; a metal liner lining the sidewalls and bottom of the contact opening, in direct electrical contact with the underlying structure; a conductive liner on the metal liner, within the contact opening; and tungsten fill material on the conductive liner and within the contact opening.

公开(公告)号：US10354918B2

公开(公告)日：2019-07-16

申请号：US16279550

申请日：2019-02-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim Shih-Chun Liang

IPC: H01L21/77 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/265

Abstract: A contact element structure of a semiconductor device includes an opening positioned in an insulating material layer, the insulating material layer being positioned above a semiconductor substrate, and the opening having an upper sidewall portion, a lower sidewall portion, and a bottom surface portion. An insulating liner portion is positioned within the opening, the insulating liner portion covering the insulating material layer at the upper sidewall portion but not covering the insulating material layer at the lower sidewall portion. A contact liner is positioned within the opening and covers the insulating liner portion, the insulating material layer at the lower sidewall portion, and the insulating material layer at the bottom surface portion, and a conductive material is positioned in the opening and covers the contact liner.

公开(公告)号：US10249534B2

公开(公告)日：2019-04-02

申请号：US15608506

申请日：2017-05-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim Shih-Chun Liang

IPC: H01L21/77 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/768 ,  H01L21/265 ,  H01L27/12 ,  H01L27/32

Abstract: The present disclosure provides a contact element of a semiconductor device structure, wherein an opening is formed in an insulating material layer, the insulating material layer being provided over a semiconductor substrate. Within a lower portion of the opening, a contact liner portion is formed, the contact liner portion covering a bottom of the opening and partially covering a lower sidewall portion of the lower portion of the opening such that an upper sidewall portion at an upper portion of the opening is exposed to further processing. An insulating liner portion is formed within the opening, the insulating liner portion covering the exposed upper sidewall portion. Furthermore, a contact liner is formed within the opening, the contact liner covering the contact liner portion in the insulating liner portion, and the opening is filled with a conductive material.

公开(公告)号：US20180096933A1

公开(公告)日：2018-04-05

申请号：US15820602

申请日：2017-11-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Atsushi Ogino ,  Justin C. Long

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L21/311 ,  H01L23/485

CPC classification number: H01L23/5283 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/7688 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238

Abstract: A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.

公开(公告)号：US09793216B2

公开(公告)日：2017-10-17

申请号：US15006426

申请日：2016-01-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Joyeeta Nag ,  Jim Shih-Chun Liang ,  Domingo A. Ferrer Luppi ,  Atsushi Ogino ,  Andrew H. Simon ,  Michael P. Chudzik

IPC: H01L23/48 ,  H01L23/535 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53252 ,  H01L23/53266

Abstract: Aspects of the present disclosure include integrated circuit (IC) structures with metal plugs therein, and methods of forming the same. An IC fabrication method according to embodiments of the present disclosure can include: providing a structure including a via including a bulk semiconductor material therein, wherein the via further includes a cavity extending from a top surface of the via to an interior surface of the via, and wherein a portion of the bulk semiconductor material defines at least one sidewall of the cavity; forming a first metal level on the via, wherein the first metal level includes a contact opening positioned over the cavity of the via; forming a metal plug within the cavity to the surface of the via, such that the metal plug conformally contacts a sidewall of the cavity and the interior surface of the via, wherein the metal plug is laterally distal to an exterior sidewall of the via; and forming a contact within the contact opening of the first metal level.