公开(公告)号：US09362230B1

公开(公告)日：2016-06-07

申请号：US14722302

申请日：2015-05-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lawrence A. Clevenger ,  Vincent J. McGahay ,  Joyeeta Nag ,  Yiheng Xu

IPC: H01L21/265 ,  H01L23/532 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76892 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76885 ,  H01L23/5256 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Electrically conductive structures and methods of making electrically conductive structures. The methods include providing a dielectric layer of a material having a top surface and a dielectric constant of less than 3; rastering a gas cluster ion beam to form a patterned modified surface region of the top surface of the dielectric layer; and selectively forming an electrically conductive thin film on the patterned modified surface region using atomic layer deposition.

Abstract translation: 导电结构和制造导电结构的方法。 所述方法包括提供具有上表面和介电常数小于3的材料的电介质层; 清理气体簇离子束以形成电介质层的顶表面的图案化的改性表面区域; 并使用原子层沉积在图案化的改性表面区域上选择性地形成导电薄膜。