公开(公告)号：US08932934B2

公开(公告)日：2015-01-13

申请号：US13903283

申请日：2013-05-28

Applicant: GlobalFoundries Inc.

Inventor： Moosung M. Chae ,  Errol Todd Ryan ,  Nicholas Vincent Licausi ,  Christian Witt ,  Ailian Zhao ,  Ming He ,  Sean X. Lin ,  Xunyuan Zhang ,  Kunaljeet Tanwar

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/48 ,  H01L21/316 ,  H01L21/02

CPC classification number: H01L21/76831 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76843 ,  H01L2221/1047

Abstract: A process is provided for methods of reducing contamination of the self-forming barrier of an ultra-low k layer during semiconductor fabrication. In one aspect, a method includes: providing a cured ultra-low k film which contains at least one trench, and the pores of the film are filled with a pore-stuffing material; removing exposed pore-stuffing material at the surface of the trench to form exposed pores; and forming a self-forming barrier layer on the surface of the trench.

Abstract translation: 提供了一种用于在半导体制造期间减少超低k层的自形成势垒的污染的方法的方法。 一方面，一种方法包括：提供包含至少一个沟槽的固化的超低k膜，并且用孔填充材料填充膜的孔; 在沟槽的表面去除暴露的孔隙填充材料以形成暴露的孔; 并在沟槽的表面上形成自形成阻挡层。