Mask error compensation by optical modeling calibration
    11.
    发明授权
    Mask error compensation by optical modeling calibration 有权
    通过光学建模校准进行掩模误差补偿

    公开(公告)号:US09384318B2

    公开(公告)日:2016-07-05

    申请号:US14263340

    申请日:2014-04-28

    CPC classification number: G06F17/5081 G03F1/36 G03F7/70441

    Abstract: Methodologies and an apparatus for enabling OPC models to account for errors in the mask are disclosed. Embodiments include: determining a patterning layer of a circuit design; estimating a penetration ratio indicating a mask corner rounding error of a fabricated mask for forming the patterning layer in a fabricated circuit; and determining, by a processor, a compensation metric for optical proximity correction of the circuit design based on the penetration ratio.

    Abstract translation: 公开了用于使OPC模型能够解决掩模中的错误的方法和装置。 实施例包括:确定电路设计的图形层; 估计在制造的电路中指示用于形成图案化层的制造掩模的掩模角舍入误差的穿透比; 以及基于所述穿透比,由处理器确定所述电路设计的光学邻近校正的补偿度量。

    RETICLE, SYSTEM COMPRISING A PLURALITY OF RETICLES AND METHOD FOR THE FORMATION THEREOF
    14.
    发明申请
    RETICLE, SYSTEM COMPRISING A PLURALITY OF RETICLES AND METHOD FOR THE FORMATION THEREOF 有权
    包含多种反应物的系统的制度及其形成方法

    公开(公告)号:US20160291457A1

    公开(公告)日:2016-10-06

    申请号:US14674157

    申请日:2015-03-31

    CPC classification number: G03F1/36

    Abstract: A method includes providing a pre-optical proximity correction (OPC) layout of at least a portion of at least one reticle. The pre-OPC layout defines a test cell including a first test cell area having a plurality of first target features having a first pitch and a second test cell area having a plurality of second target features having a second pitch. A post-OPC layout of the portion of the reticle is formed on the basis of the pre-OPC layout. The formation of the post-OPC layout includes performing a rule-based OPC process, wherein a plurality of first reticle features for the first test cell area are provided on the basis of the plurality of first target features, and performing a model-based OPC process, wherein a plurality of second reticle features for the second test cell area are provided on the basis of the plurality of second target features.

    Abstract translation: 一种方法包括提供至少一个掩模版的至少一部分的光学前邻近校正(OPC)布局。 预OPC布局定义了包括具有多个具有第一间距的第一目标特征的第一测试单元区域和具有多个具有第二间距的第二目标特征的第二测试单元区域的测试单元。 基于OPC前的布局形成了掩模版部分的后OPC布局。 后OPC布局的形成包括执行基于规则的OPC处理,其中,基于多个第一目标特征提供用于第一测试单元区域的多个第一掩模版特征,并且执行基于模型的OPC 处理,其中,基于所述多个第二目标特征提供用于所述第二测试单元区域的多个第二掩模版特征。

    OPTICAL PROXIMITY CORRECTION FOR CONNECTING VIA BETWEEN LAYERS OF A DEVICE
    15.
    发明申请
    OPTICAL PROXIMITY CORRECTION FOR CONNECTING VIA BETWEEN LAYERS OF A DEVICE 审中-公开
    用于通过设备层连接的光学近似校正

    公开(公告)号:US20150006138A1

    公开(公告)日:2015-01-01

    申请号:US13932141

    申请日:2013-07-01

    CPC classification number: G03F7/70441 G03F1/36

    Abstract: Approaches for simulating a photolithographic process are provided. Specifically, provided is an optical proximity correction (OPC) model that includes kernel parameters corresponding to inter-layer activity and an etch process for a connecting via of an integrated circuit (IC). A resultant intensity is determined for a corresponding plurality of process variations corresponding to the interlayer activity and the etch process. As such, the OPC model considers both interlay activity and etch process.

    Abstract translation: 提供了用于模拟光刻工艺的方法。 具体地,提供了包括对应于层间活动的核参数和用于集成电路(IC)的连接通路的蚀刻处理的光学邻近校正(OPC)模型。 对于与层间活性和蚀刻工艺相对应的相应多个工艺变化确定合成强度。 因此,OPC模型考虑了interlay活动和蚀刻过程。

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