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公开(公告)号:US20100059749A1
公开(公告)日:2010-03-11
申请号:US12547119
申请日:2009-08-25
IPC分类号: H01L29/786
CPC分类号: H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78618
摘要: A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.
摘要翻译: 提供一种薄膜晶体管,其包括在衬底上的栅极电极层,栅极电极层上的栅极绝缘层,在栅极绝缘层上包括非晶半导体的层,包括非晶形的层上的一对晶体区域 半导体以及与该对晶体区域接触的源极和漏极区域。 源区和漏区包括添加有赋予一种导电类型的杂质的微晶半导体层。