利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

122 条记录 (耗时 0.042 秒)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09525023B2

    公开(公告)日：2016-12-20

    申请号：US13473643

    申请日：2012-05-17

    申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yasuhiro Jinbo ,  Tomohiro Kimura ,  Yoshitaka Yamamoto

    发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yasuhiro Jinbo ,  Tomohiro Kimura ,  Yoshitaka Yamamoto

    IPC分类号： H01L29/10 ,  H01L29/04 ,  H01L29/417 ,  H01L29/786

    CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/78678 ,  H01L29/78696

    摘要： One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.

    摘要翻译： 本发明的一个实施例是包括栅电极的半导体器件; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜上并位于所述栅极电极上方的半导体层; 形成在所述半导体层上的第二绝缘膜; 形成在第二绝缘膜的顶表面和侧表面上的第一绝缘膜，半导体层的侧表面和栅极绝缘膜; 硅层，其形成在第一绝缘膜上并电连接到半导体层; 以及形成在硅层上的源电极和漏电极。 源电极和漏电极在第一绝缘膜上彼此电分离。 半导体层不与源电极和漏电极中的每一个接触。

    Method for manufacturing semiconductor device
    3.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08823023B2

    公开(公告)日：2014-09-02

    申请号：US13542693

    申请日：2012-07-06

    申请人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

    发明人： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

    IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L27/12

    CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

    摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

    摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

    Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device
    5.
    发明授权
    Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device 有权
    微晶硅膜的制造方法和半导体器件的制造方法

    公开(公告)号：US08426295B2

    公开(公告)日：2013-04-23

    申请号：US13267257

    申请日：2011-10-06

    申请人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi ,  Yoshitaka Yamamoto

    发明人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi ,  Yoshitaka Yamamoto

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78696 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28008 ,  H01L29/04 ,  H01L29/6675

    摘要： To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.

    摘要翻译： 提供具有高结晶度和高膜密度的微晶硅膜的制造方法。 在本发明的微晶硅膜的制造方法中，在第一条件下，在绝缘膜上形成包含混晶相的第一微晶硅膜，在第二条件下形成第二微晶硅膜。 第一条件和第二条件是使用含硅和含氢气体的沉积气体作为第一源气体和第二源气体的条件。 在第一条件下以第一气体的供给和第二气体的供给交替进行的方式供给第一源气体。

    Thin film transistor
    8.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08283667B2

    公开(公告)日：2012-10-09

    申请号：US12547119

    申请日：2009-08-25

    申请人： Erika Takahashi ,  Takayuki Kato ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    发明人： Erika Takahashi ,  Takayuki Kato ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    IPC分类号： H01L29/72

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78618

    摘要： A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.

    摘要翻译： 提供一种薄膜晶体管，其包括在衬底上的栅极电极层，栅极电极层上的栅极绝缘层，在栅极绝缘层上包括非晶半导体的层，包括非晶形的层上的一对晶体区域 半导体以及与该对晶体区域接触的源极和漏极区域。 源区和漏区包括添加有赋予一种导电类型的杂质的微晶半导体层。

    Method for manufacturing semiconductor device
    9.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08242002B2

    公开(公告)日：2012-08-14

    申请号：US13222076

    申请日：2011-08-31

    申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02678 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1218 ,  H01L27/1285

    摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.

    摘要翻译： 在玻璃基板上形成包含半导体膜的层，并加热。 玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束 具有小于或等于100μm的宽度，宽度与长度的比为1:500或更大，激光束轮廓的全宽度小于或等于50μm，使得结晶 形成半导体膜。 作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。