Abstract:
In some examples, a transistor includes a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
Abstract:
In some examples, a transistor includes a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
Abstract:
The present disclosure describes a compound slot, and systems and methods of forming the compound slot. An example of a compound slot includes a wafer, where the compound slot includes a trench along a long axis of the compound slot and on a top surface of the wafer, where the trench passes through an initial portion of a total depth of the wafer. A number of openings pass through a remaining portion of the total depth of the wafer, where at least a retained portion of a bottom of the trench is present around a perimeter of each of the number of openings.
Abstract:
In some examples, an ink level sensor includes a sense capacitor between a first node and ground, a first switch to couple a first voltage to the first node and charge the sense capacitor, a second switch to couple the first node with a second node and share the charge between the sense capacitor and a reference capacitor, causing a second voltage at the second node, and a transistor having a drain, a gate coupled to the second node, and a source coupled to ground, the transistor to provide a drain to source resistance in proportion to the second voltage.
Abstract:
In some examples, a method of sensing an ink level includes applying a pre-charge voltage to a sense capacitor to charge the sense capacitor with a charge, sharing the charge between the sense capacitor and a reference capacitor, causing a reference voltage at a gate of an evaluation transistor, and determining a resistance from a drain to a source of the evaluation transistor that results from the reference voltage.
Abstract:
A fluid ejection device includes a plurality of address lines and a fire line for communicating a fire signal. The device also includes a plurality of nozzle circuits coupled to the fire line and the plurality of address lines. Each nozzle circuit is configured, when enabled, to eject fluid via a different one of a plurality of nozzles in response to the fire signal. A subset of the plurality of address lines is coupled to each pair of the plurality of nozzle circuits. Each subset that is coupled to one of the pairs of nozzle circuits is selected so that simultaneous activation of every address line of that subset simultaneously enables each nozzle circuit in the pair or pairs of nozzle circuits coupled to that triad and none of the other nozzle circuits of the plurality of nozzle circuits.
Abstract:
A fluid ejection device includes a plurality of address lines and a fire line for communicating a fire signal. The device also includes a plurality of nozzle circuits coupled to the fire line and the plurality of address lines. Each nozzle circuit is configured, when enabled, to eject fluid via a different one of a plurality of nozzles in response to the fire signal. A subset of the plurality of address lines is coupled to each pair of the plurality of nozzle circuits. Each subset that is coupled to one of the pairs of nozzle circuits is selected so that simultaneous activation of every address line of that subset simultaneously enables each nozzle circuit in the pair or pairs of nozzle circuits coupled to that triad and none of the other nozzle circuits of the plurality of nozzle circuits.
Abstract:
An integrated circuit (IC) erasable programmable read-only memory (EPROM) structure for a thermal inkjet printhead includes: a fire line to provide fire line data; a select line to provide selecting data; a firing cell coupled to the fire line; an EPROM cell coupled to the fire line; a selector cell coupled to the select line, the firing cell and the EPROM cell; and a data switching circuit to provide address data to the firing cell or the EPROM cell. The data switching circuit and the selector cell selectively enable transfer of the fire line data from the fire line to the firing cell or the EPROM cell as a function of state of the selecting data on the select line and the address data from the data switching circuit.