公开(公告)号：US11456411B2

公开(公告)日：2022-09-27

申请号：US16574103

申请日：2019-09-18

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Wei-Chuan Chen ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01L43/12 ,  G01R33/09 ,  G11B5/39 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08

Abstract: A method for fabricating a magnetic tunneling junction (MTJ) element is disclosed. A substrate is provided. A reference layer is formed on the substrate. A tunnel barrier layer is formed on the reference layer. A free layer is formed on the tunnel barrier layer. A composite capping layer is formed on the free layer. The composite capping layer comprises an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The reference layer, the tunnel barrier layer, the free layer, and the composite capping layer constitute an MTJ stack.

公开(公告)号：US11114605B2

公开(公告)日：2021-09-07

申请号：US16529805

申请日：2019-08-02

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: A composite storage layer for magnetic memory devices includes a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer. The tri-layered spacer stack comprises a first non-magnetic layer, a discontinuous, insulating oxide layer, and a second non-magnetic layer. The discontinuous, insulating oxide layer is sandwiched by the first non-magnetic layer and the second non-magnetic layer.

公开(公告)号：US20210134504A1

公开(公告)日：2021-05-06

申请号：US17149750

申请日：2021-01-15

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  G01R33/09

Abstract: A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a first spacer layer adjacent to the second pinned layer, a second spacer layer, a ferromagnetic layer sandwiched by the first spacer layer and the second spacer layer, a polarization enhancement layer adjacent to the second spacer layer.

公开(公告)号：US20200052191A1

公开(公告)日：2020-02-13

申请号：US16529752

申请日：2019-08-01

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16

Abstract: A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a texture decoupling layer, a polarization enhancement layer, and a coupling enhancement (CE) structure between the texture decoupling layer and the second pinned layer.