公开(公告)号：US20060158800A1

公开(公告)日：2006-07-20

申请号：US10540399

申请日：2003-12-24

申请人： Ryouichi Takayama ,  Hidekazu Nakanishi ,  Takashi Inoue ,  Tetsuo Kawasaki ,  Kouji Hasegawa ,  Yukio Iwasaki

发明人： Ryouichi Takayama ,  Hidekazu Nakanishi ,  Takashi Inoue ,  Tetsuo Kawasaki ,  Kouji Hasegawa ,  Yukio Iwasaki

IPC分类号： H02H9/00

CPC分类号： H03H9/145 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02929 ,  H03H9/02984 ,  H03H9/25 ,  H03H9/6496

摘要： The present invention relates to an electronic part, and its object is to improve temperature characteristics and electrical properties. In order to attain the object, the electronic part according to the present invention includes a substrate (1), a comb-type electrode (2) that is disposed on the upper surface of the substrate (1), and a protective film (4) that covers the comb-type electrode (2) and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film (4) is L, the width of one pitch of a convex portion (4a) of the unevenness in the uneven shape of the protective film (4) is L1, the width of one pitch of a concave portion (4b) thereof is L2, the pitch width of one pitch of the comb-type electrode (2) is p, the width of one of electrode fingers which form the comb-type electrode (2) is p1 and the width between the electrode fingers is p2, then each parameter is set so that the following expressions are satisfied, L1≦p1 and L2≧p2 (herein, the correlations of L≈p, p1+p2=p and L1+L2=L are satisfied).

摘要翻译： 电子部件技术领域本发明涉及电子部件，其目的在于提高温度特性和电气性能。 为了实现该目的，根据本发明的电子部件包括基板（1），设置在基板（1）的上表面上的梳型电极（2）和保护膜（4） ），其覆盖梳状电极（2），并且在其顶面具有不均匀的形状。 如果保护膜（4）的凹凸形状中的一个间距的间距宽度为L，则保护膜（4）的凹凸形状的凹凸的凸部（4a）的一个节距的宽度为L 如图1所示，凹部（4b）的一个间距的宽度为L 2，梳型电极（2）的一个间距的间距宽度为p，形成梳状电极 型电极（2）为p 1，电极指之间的宽度为p 2，则每个参数被设定为满足以下表达式：L 1 <= p 1和L 2> = p 2（这里，相关性 L pp，p 1 + p 2 = p，L 1 + L 2 = L）。

公开(公告)号：US07855619B2

公开(公告)日：2010-12-21

申请号：US12333855

申请日：2008-12-12

申请人： Ryouichi Takayama ,  Hidekazu Nakanishi ,  Takashi Inoue ,  Tetsuo Kawasaki ,  Kouji Hasegawa ,  Yukio Iwasaki

发明人： Ryouichi Takayama ,  Hidekazu Nakanishi ,  Takashi Inoue ,  Tetsuo Kawasaki ,  Kouji Hasegawa ,  Yukio Iwasaki

IPC分类号： H03H9/13 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/145 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02929 ,  H03H9/02984 ,  H03H9/25 ,  H03H9/6496

摘要： An electronic part, an object of which is to improve temperature characteristics and electrical properties, includes a substrate (1), a comb-type electrode (2) that is disposed on the upper surface of the substrate (1), and a protective film (4) that covers the comb-type electrode (2) and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film (4) is L, the width of one pitch of a convex portion (4a) of the unevenness in the uneven shape of the protective film (4) is L1, the width of one pitch of a concave portion (4b) thereof is L2, the pitch width of one pitch of the comb-type electrode (2) is p, the width of one of electrode fingers which form the comb-type electrode (2) is p1 and the width between the electrode fingers is p2, then each parameter is set so that the following expressions are satisfied, L1≦p1 and L2≧p2 (herein, the correlations of L≈p, p1+p2=p and L1+L2=L are satisfied).

摘要翻译： 电子部件，其目的在于提高温度特性和电性能，包括基板（1），设置在基板（1）的上表面上的梳状电极（2）和保护膜 （4），其覆盖梳状电极（2），并且在其顶面具有不均匀的形状。 如果保护膜（4）的凹凸形状中的一个间距的间距宽度为L，则保护膜（4）的凹凸形状的凹凸的凸部（4a）的一个间距的宽度为L1， 其凹部（4b）的一个间距的宽度为L2，梳型电极（2）的一个间距的间距宽度为p，形成梳型电极（2）的电极指的一个的宽度 ）为p1，电极指之间的宽度为p2，则设定每个参数，使得满足以下表达式：L1＆nlE; p1和L2≥p2（这里，L≈p，p1 + p2 = p和L1的相关性 + L2 = L）。

公开(公告)号：US07538636B2

公开(公告)日：2009-05-26

申请号：US10540399

申请日：2003-12-24

申请人： Ryouichi Takayama ,  Hidekazu Nakanishi ,  Takashi Inoue ,  Tetsuo Kawasaki ,  Kouji Hasegawa ,  Yukio Iwasaki

发明人： Ryouichi Takayama ,  Hidekazu Nakanishi ,  Takashi Inoue ,  Tetsuo Kawasaki ,  Kouji Hasegawa ,  Yukio Iwasaki

IPC分类号： H03H9/13 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/145 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02929 ,  H03H9/02984 ,  H03H9/25 ,  H03H9/6496

摘要： An electronic part, object of which is to improve temperature characteristics and electrical properties, includes a substrate (1), a comb-type electrode (2) that is disposed on the upper surface of the substrate (1), and a protective film (4) that covers the comb-type electrode (2) and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film (4) is L, the width of one pitch of a convex portion (4a) of the unevenness in the uneven shape of the protective film (4) is L1, the width of one pitch of a concave portion (4b) thereof is L2, the pitch width of one pitch of the comb-type electrode (2) is p, the width of one of electrode fingers which form the comb-type electrode (2) is p1 and the width between the electrode fingers is p2, then each parameter is set so that the following expressions are satisfied, L1≦p1and L2≧p2(herein, the correlations of L≈p, p1+p2=p and L1+L2=L are satisfied).

摘要翻译： 电子部件，其目的是提高温度特性和电特性，包括：基板（1），设置在基板（1）的上表面上的梳状电极（2）和保护膜 4），其覆盖梳状电极（2），并且在其顶面具有不均匀的形状。 如果保护膜（4）的凹凸形状中的一个间距的间距宽度为L，则保护膜（4）的凹凸形状的凹凸的凸部（4a）的一个节距的宽度为L1， 其凹部（4b）的一个间距的宽度为L2，梳型电极（2）的一个间距的间距宽度为p，形成梳型电极（2）的电极指的一个的宽度 ）为p1，电极指之间的宽度为p2，则设定每个参数，使得满足以下表达式：L1 <= p1和L2> = p2（这里，L≈p，p1 + p2 = p和 L1 + L2 = L）。

公开(公告)号：US09065424B2

公开(公告)日：2015-06-23

申请号：US13992624

申请日：2012-03-05

申请人： Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Joji Fujiwara

发明人： Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Joji Fujiwara

IPC分类号： H03H9/00 ,  H03H9/54 ,  H03H9/02

CPC分类号： H01L41/047 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02858 ,  H03H9/02881 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/54

摘要： In an acoustic wave device, a high-order transverse mode wave which is an unnecessary wave is suppressed. The acoustic wave device includes: a piezoelectric substrate; at least one pair of IDT electrodes formed on the piezoelectric substrate; and a dielectric film which covers at least a part of the piezoelectric substrate and the IDT electrodes, and the IDT electrodes each has a plurality of electrode fingers. The dielectric film covers at least an area in which the electrode fingers are arranged interleaved with each other. An acoustic velocity of an acoustic wave in an intersection area, within the region, which is a portion from ends of the electrode fingers to a predetermined length or more inward from the ends, is greater than an acoustic velocity of an acoustic wave in an edge area including end portions of the electrode fingers.

摘要翻译： 在声波装置中，抑制了作为不必要波的高阶横波模式波。 声波装置包括：压电基板; 形成在所述压电基板上的至少一对IDT电极; 以及覆盖压电基板和IDT电极的至少一部分的电介质膜，并且IDT电极各自具有多个电极指。 电介质膜至少覆盖电极指彼此交错布置的区域。 在从端部的端部到预定长度或从端部向内的部分的区域内的交叉区域中的声波的声速大于边缘中的声波的声速 区域包括电极指的端部。

公开(公告)号：US08576025B2

公开(公告)日：2013-11-05

申请号：US12976030

申请日：2010-12-22

申请人： Takashi Inoue ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Shun-ichi Seki ,  Shoji Okamoto

发明人： Takashi Inoue ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Shun-ichi Seki ,  Shoji Okamoto

IPC分类号： H03H9/72 ,  H03H9/64 ,  H03H9/25

CPC分类号： H03H9/02897 ,  H01L2224/11 ,  H03H9/059

摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.

摘要翻译： 声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。 此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。 第一应力松弛层的弹性模量小于电介质层的弹性模量。

公开(公告)号：US08154171B2

公开(公告)日：2012-04-10

申请号：US12680774

申请日：2008-10-21

申请人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

发明人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

IPC分类号： H03H9/25

CPC分类号： H03H9/0222 ,  H03H9/02574

摘要： A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.

摘要翻译： 弹性边界波装置包括由压电材料制成的第一介质层，设置在第一介质层上的第二介质层，设置在第二介质层上的第三介质层，以及设置在第二介质和第三介质之间的界面处的电极 层。 电极驱动第三介质层产生横波。 第三介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 第二介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 该声界面波装置具有大的机电耦合系数。

公开(公告)号：US20120019102A1

公开(公告)日：2012-01-26

申请号：US13260798

申请日：2010-04-19

申请人： Shun-ichi Seki ,  Hiroki Kamiguchi ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Shun-ichi Seki ,  Hiroki Kamiguchi ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/047

CPC分类号： H03H9/02842 ,  H03H3/10 ,  H03H9/02834 ,  H03H9/725

摘要： An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor,

摘要翻译： 声波元件包括压电体，设置在压电体的上表面上的第一和第二叉指式换能器（IDT）电极，以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层 。 第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。 第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。 该声波元件具有优选的温度特性和机电耦合系数，

公开(公告)号：US08072293B2

公开(公告)日：2011-12-06

申请号：US12444617

申请日：2007-11-12

申请人： Hiroyuki Nakamura ,  Ken Matsunami ,  Tetsuya Tsurunari ,  Hidekazu Nakanishi

发明人： Hiroyuki Nakamura ,  Ken Matsunami ,  Tetsuya Tsurunari ,  Hidekazu Nakanishi

IPC分类号： H03H9/64 ,  H03H9/72

CPC分类号： H03H9/6496 ,  H03H9/725

摘要： A surface acoustic wave filter comprised of a plurality of surface acoustic wave resonators having different resonance frequencies, the filter comprising a substrate made of lithium niobate, comb electrodes (1201 and 1202) formed on the substrate, and a thin dielectric film covering the comb electrodes (1201 and 1202), wherein the surface acoustic wave resonator having a lower resonance frequency is formed to have a metallization ratio larger than a metallization ratio of the surface acoustic wave resonator having a higher resonance frequency, thereby providing the surface acoustic wave filter and an antenna duplexer featuring superior characteristics with insignificant ripples while suppressing spurious responses of the surface acoustic wave resonators.

摘要翻译： 由具有不同谐振频率的多个表面声波谐振器构成的表面声波滤波器，该滤波器包括由铌酸锂构成的基板，形成在基板上的梳电极（1201和1202）以及覆盖梳状电极的薄电介质膜 （1201和1202），其中具有较低共振频率的表面声波谐振器形成为具有大于具有较高谐振频率的表面声波谐振器的金属化率的金属化率，从而提供表面声波滤波器和 天线双工器，具有优异的特性，无微不足道的波纹，同时抑制声表面波谐振器的杂散响应。

公开(公告)号：US07982365B2

公开(公告)日：2011-07-19

申请号：US12428591

申请日：2009-04-23

申请人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/08

CPC分类号： H03H9/0222

摘要： The elastic wave device of the present invention has an piezoelectric substrate; a first dielectric layer disposed on the piezoelectric substrate; a second dielectric layer disposed on the first dielectric layer; and an acoustical layer on the second dielectric layer. Determining each film thickness of the first and the second dielectric layers provides advantageous effects. That is, energy of an SH wave as a main wave is confined in the boundary between the piezoelectric substrate and the first dielectric layer, and at the same time, an SV wave is suppressed as an unwanted wave. The device allows the SV wave—whose displacement distribution is similar to that of Stoneley wave—to have displacement distribution on the upper surface of the second dielectric layer and to be suppressed by the acoustical layer disposed on the second dielectric layer.

摘要翻译： 本发明的弹性波装置具有压电基板; 设置在所述压电基板上的第一电介质层; 设置在所述第一电介质层上的第二电介质层; 以及在第二电介质层上的声层。 确定第一和第二介电层的每个膜厚度提供有利的效果。 也就是说，作为主波的SH波的能量被限制在压电基板和第一介电层之间的边界中，同时，SV波被抑制为不需要的波。 该装置允许其位移分布类似于斯派利波波的SV波在第二介电层的上表面上具有位移分布并且被设置在第二介电层上的声层抑制。

公开(公告)号：US08669832B2

公开(公告)日：2014-03-11

申请号：US13125633

申请日：2010-02-23

申请人： Hiroki Kamiguchi ,  Hidekazu Nakanishi ,  Yosuke Hamaoka ,  Shoji Okamoto ,  Hiroyuki Nakamura

发明人： Hiroki Kamiguchi ,  Hidekazu Nakanishi ,  Yosuke Hamaoka ,  Shoji Okamoto ,  Hiroyuki Nakamura

IPC分类号： H03H9/64 ,  H03H9/25 ,  H03H9/42

CPC分类号： H03H9/02992 ,  H03H3/08 ,  H03H9/02685 ,  H03H9/14517

摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.

摘要翻译： 声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。 第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。 所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。 加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。 在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。 该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。