ELASTIC WAVE ELEMENT
    1.
    发明申请
    ELASTIC WAVE ELEMENT 有权
    弹性波形元件

    公开(公告)号:US20100060101A1

    公开(公告)日:2010-03-11

    申请号:US12532426

    申请日:2008-05-09

    IPC分类号: H01L41/08 H01L41/047

    CPC分类号: H03H9/0222

    摘要: An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length λ of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/λ≧0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.

    摘要翻译: 弹性波形元件包括压电基板,设置在压电基板上的叉指电极,覆盖指状电极的氧化硅膜和设置在氧化硅膜上的氮氧化硅膜。 氧化硅膜的膜厚H和通过压电基板传播的弹性波的波长λ满足H /λ≥0.15的关系。 弹性波元件减少弹性波的传播特性的波动,并且具有高的可靠性。

    Electrode foil and capacitor using the same
    4.
    发明授权
    Electrode foil and capacitor using the same 有权
    电极箔和电容器使用相同

    公开(公告)号:US08208242B2

    公开(公告)日:2012-06-26

    申请号:US13129024

    申请日:2010-10-05

    IPC分类号: H01G9/04

    摘要: An electrode foil includes a substrate made of metal and a rough layer disposed on a surface of the substrate and including plural fine metallic particles. The rough layer includes a lower layer, an intermediate layer which is disposed on the lower layer and is more distanced from the substrate than the lower layer is, and an upper layer which is disposed on the intermediate layer and is more distanced from the substrate than the intermediate layer is. The mode of diameters of fine particles in the intermediate layer is greater than the mode of diameters of the fine particles in the upper and lower layers. This electrode foil provides a capacitor having a small leakage current.

    摘要翻译: 电极箔包括由金属制成的基板和设置在基板的表面上并包括多个细金属颗粒的粗糙层。 粗层包括下层,设置在下层上并且比下层更远离衬底的中间层,以及设置在中间层上并且与衬底相距更远的上层比 中间层是。 中间层中的细颗粒的直径的模式大于上层和下层中的细颗粒的直径的模式。 该电极箔提供具有小漏电流的电容器。

    Acoustic boundary wave device and electronic apparatus using the same
    5.
    发明授权
    Acoustic boundary wave device and electronic apparatus using the same 有权
    声界波装置及其使用的电子装置

    公开(公告)号:US07999437B2

    公开(公告)日:2011-08-16

    申请号:US12619077

    申请日:2009-11-16

    IPC分类号: H03H9/25

    CPC分类号: H03H9/0222

    摘要: An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.

    摘要翻译: 声界波装置包括压电体,形成在压电体上的IDT层,形成在压电体上并连接到IDT层的焊盘电极层,形成在压电体上并覆盖至少一部分的第一电介质层 以及形成在所述压电体上的第二电介质层,覆盖所述第一电介质层,并且具有露出所述焊盘电极层的顶面的至少一部分的开口部。 焊盘电极层的形成金属的侧面比第二电介质层更容易扩散到第一电介质层。 第二电介质层覆盖焊盘电极层的侧面,并且防止第一电介质层接触焊盘电极层的侧面。

    ACOUSTIC WAVE DEVICE AND ACOUSTIC WAVE FILTER
    6.
    发明申请
    ACOUSTIC WAVE DEVICE AND ACOUSTIC WAVE FILTER 有权
    声波设备和声波滤波器

    公开(公告)号:US20110193655A1

    公开(公告)日:2011-08-11

    申请号:US13125633

    申请日:2010-02-23

    IPC分类号: H03H9/54

    摘要: An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.

    摘要翻译: 声波装置包括叉指式换能器(IDT)电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。 第一梳状电极包括第一汇流条,第一交叉指状电极指和第一虚拟电极指。 所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指,所述第二虚拟电极指指向所述第一交叉指状电极指,所述加权部和非加权部。 加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。 在非加重部分中,在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。 该声波装置防止IDT电极和分离电极之间的短路,并且提供抑制不想要的波的优良特性。

    Elastic wave element containing a silicon oxide film and a silicon nitride oxide film
    7.
    发明授权
    Elastic wave element containing a silicon oxide film and a silicon nitride oxide film 有权
    包含氧化硅膜和氮氧化硅膜的弹性波元件

    公开(公告)号:US07928633B2

    公开(公告)日:2011-04-19

    申请号:US12532426

    申请日:2008-05-09

    IPC分类号: H01L41/04 H03H9/145

    CPC分类号: H03H9/0222

    摘要: An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length λ of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/λ≧0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.

    摘要翻译: 弹性波形元件包括压电基板,设置在压电基板上的叉指电极,覆盖指状电极的氧化硅膜和设置在氧化硅膜上的氮氧化硅膜。 氧化硅膜的膜厚H和通过压电基板传播的弹性波的波长λ满足H /λ≥0.15的关系。 弹性波元件减少弹性波的传播特性的波动,并且具有高的可靠性。

    ACOUSTIC BOUNDARY WAVE DEVICE AND ELECTRONIC APPARATUS USING THE SAME
    9.
    发明申请
    ACOUSTIC BOUNDARY WAVE DEVICE AND ELECTRONIC APPARATUS USING THE SAME 有权
    声音边界波装置和使用它的电子装置

    公开(公告)号:US20100127597A1

    公开(公告)日:2010-05-27

    申请号:US12619077

    申请日:2009-11-16

    IPC分类号: H01L41/047 H01L41/16

    CPC分类号: H03H9/0222

    摘要: An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.

    摘要翻译: 声界波装置包括压电体,形成在压电体上的IDT层,形成在压电体上并连接到IDT层的焊盘电极层,形成在压电体上并覆盖至少一部分的第一电介质层 以及形成在所述压电体上的第二电介质层,覆盖所述第一电介质层,并且具有露出所述焊盘电极层的顶面的至少一部分的开口部。 焊盘电极层的形成金属的侧面比第二电介质层更容易扩散到第一电介质层。 第二电介质层覆盖焊盘电极层的侧面,并且防止第一电介质层接触焊盘电极层的侧面。

    ELASTIC WAVE ELEMENT AND ELECTRONIC APPARATUS USING SAME
    10.
    发明申请
    ELASTIC WAVE ELEMENT AND ELECTRONIC APPARATUS USING SAME 有权
    使用相同的弹性波元件和电子设备

    公开(公告)号:US20120019102A1

    公开(公告)日:2012-01-26

    申请号:US13260798

    申请日:2010-04-19

    IPC分类号: H01L41/047

    摘要: An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor,

    摘要翻译: 声波元件包括压电体,设置在压电体的上表面上的第一和第二叉指式换能器(IDT)电极,以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层 。 第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。 第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。 该声波元件具有优选的温度特性和机电耦合系数,