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公开(公告)号：US08564172B2
公开(公告)日：2013-10-22
申请号：US13260798
申请日：2010-04-19
IPC分类号： H03H9/25
CPC分类号： H03H9/02842 , H03H3/10 , H03H9/02834 , H03H9/725
摘要： An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor.
摘要翻译： 声波元件包括压电体，设置在压电体的上表面上的第一和第二叉指式换能器（IDT）电极，以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层 。 第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。 第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。 该声波元件具有优选的温度特性和机电耦合系数。
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公开(公告)号：US20120019102A1
公开(公告)日：2012-01-26
申请号：US13260798
申请日：2010-04-19
IPC分类号： H01L41/047
CPC分类号： H03H9/02842 , H03H3/10 , H03H9/02834 , H03H9/725
摘要： An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor,
摘要翻译： 声波元件包括压电体，设置在压电体的上表面上的第一和第二叉指式换能器（IDT）电极，以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层 。 第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。 第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。 该声波元件具有优选的温度特性和机电耦合系数，
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公开(公告)号：US20110156837A1
公开(公告)日：2011-06-30
申请号：US12976030
申请日：2010-12-22
IPC分类号： H03H9/70
CPC分类号： H03H9/02897 , H01L2224/11 , H03H9/059
摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要翻译： 声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。 此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。 第一应力松弛层的弹性模量小于电介质层的弹性模量。
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公开(公告)号：US08576025B2
公开(公告)日：2013-11-05
申请号：US12976030
申请日：2010-12-22
CPC分类号： H03H9/02897 , H01L2224/11 , H03H9/059
摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要翻译： 声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。 此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。 第一应力松弛层的弹性模量小于电介质层的弹性模量。
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5.发明授权Surface acoustic wave filter, and antenna duplexer and communication equipment using the same 有权表面声波滤波器，天线双工器和通信设备使用相同公开(公告)号：US06975180B2
公开(公告)日：2005-12-13
申请号：US10635004
申请日：2003-08-06
申请人： Hiroyuki Nakamura , Shun-ichi Seki
发明人： Hiroyuki Nakamura , Shun-ichi Seki
CPC分类号： H03H9/725 , H03H9/02929 , H03H9/0576 , H03H9/1071 , H03H9/14538 , H03H9/6436 , H03H9/6463 , H03H9/72
摘要： The present invention provides a surface acoustic wave filter and others that reduce ripples in a reception frequency band while ensuring sufficient attenuation in a transmission frequency band. A surface acoustic wave filter includes a surface acoustic wave resonator that allows a reception frequency band to pass while attenuating a transmission frequency band, and a surface acoustic wave filter connected in series with the surface acoustic wave resonator to allow the reception frequency band to pass while attenuating the transmission frequency band. An inductor is connected to one end of the surface acoustic wave resonator, a connection point between the surface acoustic wave filter and the surface acoustic wave resonator, and/or the other end of the surface acoustic wave resonator.
摘要翻译： 本发明提供一种表面声波滤波器等，其能够在确保发送频带的充分衰减的同时减少接收频带的波纹。 声表面波滤波器包括使接收频带在衰减发送频带的同时通过的表面声波谐振器和与表面声波谐振器串联连接的声表面波滤波器，以使接收频带通过， 衰减传输频带。 电感器连接到表面声波谐振器的一端，表面声波滤波器和表面声波谐振器之间的连接点和/或表面声波谐振器的另一端。
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公开(公告)号：US6166611A
公开(公告)日：2000-12-26
申请号：US57916
申请日：1998-04-09
申请人： Shun-ichi Seki , Yutaka Taguchi , Keiji Onishi , Osamu Kawasaki , Kazuo Eda
发明人： Shun-ichi Seki , Yutaka Taguchi , Keiji Onishi , Osamu Kawasaki , Kazuo Eda
CPC分类号： H03H9/1085 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/16195 , H03H9/059 , H03H9/6483 , H01L2924/00 , H01L2224/05599
摘要： A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said input electrical terminal and said output electrical terminal, always satisfies the relationfc.multidot.Cp
摘要翻译： 一种谐振梯型声表面波滤波器，具有输入电端子，输出电端子和形成在压电基板上的接地端子，串联臂声表面波谐振器和平行臂表面声波谐振器，每个由 在所述输入电端子和所述输出电端子之间形成用于激励表面声波的叉指换能器，并且当所述共振器梯型表面声波滤波器的中心频率由fc表示时，并且由电极数量确定的电容 所述平行臂声表面波谐振器的叉指式换能器中的手指对和电极指重叠宽度由Cp（fc：中心频率[GHz]，Cp：并联臂声表面波谐振器的叉指式换能器的电容），电容 所述平行臂声表面波谐振器的倍数为C，连接到s 所述输入电端子和所述输出电端子之间的ame节点总是满足关系fcxCp <4
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公开(公告)号：US5920142A
公开(公告)日：1999-07-06
申请号：US813279
申请日：1997-03-10
申请人： Keiji Onishi , Hideki Iwaki , Shun-ichi Seki , Yutaka Taguchi , Tsukasa Shiraishi , Yoshihiro Bessho , Osamu Kawasaki , Kazuo Eda
发明人： Keiji Onishi , Hideki Iwaki , Shun-ichi Seki , Yutaka Taguchi , Tsukasa Shiraishi , Yoshihiro Bessho , Osamu Kawasaki , Kazuo Eda
CPC分类号： H03H9/0509 , H03H3/08 , H03H9/0585 , H03H9/059 , H03H9/1042 , H03H9/1071 , H03H9/1085 , H03H9/1092 , H01L2224/1134 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/45144 , H01L2924/00013 , H01L2924/09701 , H01L2924/16152 , Y10T29/42 , Y10T29/4913 , Y10T29/49146
摘要： The present invention relates to an electronic part used for mobile communications apparatuses and the like, and more particularly to an electronic part, such as an acoustic surface-wave device, a piezoelectric ceramic device or the like, which requires an oscillation space near the surface of the functional device chip thereof, and a method of production thereof. With this method, a space retainer for forming a sealed space at the functional portion of the chip can be hermetically sealed and have high moisture resistance, and the process of forming the space retainer can be carried out easily.The electronic part of the present invention comprises a functional device chip, a space retainer for forming a sealed space at the functional portion of the chip, a circuit substrate to which the chip is secured, electrode interconnection portions for establishing electric connection between the chip and the circuit substrate, and a sealing resin for covering and sealing at least the space retainer, wherein the space retainer comprises a support layer made of a synthetic resin film, provided with an opening enclosing the functional portion and joined onto the main surface, and a cover formed and joined onto the support layer so as to cover the functional portion and form a sealed space between the cover and the functional portion.
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公开(公告)号：US5847626A
公开(公告)日：1998-12-08
申请号：US655049
申请日：1996-05-29
申请人： Yutaka Taguchi , Kazuo Eda , Shun-ichi Seki , Keiji Onishi
发明人： Yutaka Taguchi , Kazuo Eda , Shun-ichi Seki , Keiji Onishi
CPC分类号： H03H9/0028
摘要： A balanced-type surface acoustic wave filter is provided which can attain a balanced-type of high frequency circuit without connecting a balance-unbalanced conversion circuit. A substrate of tantalic acid lithium substrate with 36 degrees rotation, Y cut, and X propagation is used, and aluminium is used for electrode to form resonators. Then, two resonators in a serial arm and two resonators in a parallel arm are connected in the form of symmetry and lattice to form a balanced-type surface acoustic wave filter. In this configuration, antiresonance frequency in the serial arms and resonance frequency in the parallel arms are substantially equal to each other.
摘要翻译： 提供一种平衡型表面声波滤波器，其可以在不连接平衡不平衡转换电路的情况下获得平衡型高频电路。 使用具有36度旋转，Y切割和X传播的钽酸锂衬底的衬底，并且使用铝用于电极以形成谐振器。 然后，串联臂中的两个谐振器和并联臂中的两个谐振器以对称和格子的形式连接以形成平衡型表面声波滤波器。 在这种结构中，串联臂中的反谐振频率和并联臂中的共振频率基本相等。
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公开(公告)号：US5506552A
公开(公告)日：1996-04-09
申请号：US334673
申请日：1994-11-04
申请人： Shun-ichi Seki , Kazuo Eda , Yutaka Taguchi , Keiji Onishi
发明人： Shun-ichi Seki , Kazuo Eda , Yutaka Taguchi , Keiji Onishi
IPC分类号： H03H9/64
CPC分类号： H03H9/6483
摘要： In a surface acoustic wave (SAW) filter, on a 36.degree. Y-cut X-propagation lithium tantalate substrate, series branch SAW resonators, which are connected in series between an input terminal and an output terminal, and parallel branch SAW resonators, which are connected between respective pairs of the series branch resonators by wirings and which are grounded, are provided. Two series branch resonators and one parallel branch resonator are connected in a T shape, so as to form a fundamental unit. In the SAW filter, three fundamental units are serially connected. An interdigital transducer (IDT) included in each resonator is made of a metal film containing aluminum as the main component. The thickness of the metal film is in the range of 8% to 10% of the electrode pitch of the IDT of the parallel branch resonator.
摘要翻译： 在表面声波（SAW）滤波器中，在36°Y切割的X传播的钽酸锂衬底上串联连接在输入端子和输出端子之间的分支SAW谐振器以及并联支路SAW谐振器，其中 通过布线连接在各对串联支路谐振器之间并且被接地。 两个串联支路谐振器和一个并联支路谐振器以T形连接起来形成基本单元。 在SAW滤波器中，三个基本单元串联。 包含在每个谐振器中的叉指式换能器（IDT）由以铝为主要成分的金属膜制成。 金属膜的厚度在并联支路谐振器的IDT的电极间距的8％〜10％的范围内。
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10.发明申请Surface Acoustic Wave Resonator and Surface Acoustic Wave Filter Using the Same 有权表面声波谐振器和使用其的表面声波滤波器公开(公告)号：US20080018417A1
公开(公告)日：2008-01-24
申请号：US11587538
申请日：2005-04-21
申请人： Tsutomu Igaki , Shun-ichi Seki , Kazuo Ikeda
发明人： Tsutomu Igaki , Shun-ichi Seki , Kazuo Ikeda
CPC分类号： H03H9/02559 , H03H9/6433 , H03H9/6496
摘要： A Q-factor of a resonator at a high frequency is improved. An insertion loss of a filter using such a resonator and steepness of the filter are improved. A plurality of surface acoustic wave resonators including an interdigital transducer and reflecting electrodes provided on both sides thereof are connected in parallel on a piezoelectric substrate. Resonance frequencies of the surface acoustic wave resonators are rendered equal among all the resonators connected in parallel. In this way, Q-factor of resonance can be improved. A surface acoustic wave filter using such surface acoustic wave resonators is formed in order to improve the insertion loss and the steepness.
摘要翻译： 提高高频谐振器的Q因子。 使用这种谐振器的滤波器的插入损耗和滤波器的陡度得到改善。 包括叉指式换能器和设置在其两侧的反射电极的多个表面声波谐振器并联连接在压电基片上。 在所有并联连接的谐振器中，声表面波谐振器的共振频率相等。 这样可以提高共振的Q因子。 为了提高插入损耗和陡度，形成使用这样的表面声波谐振器的声表面波滤波器。
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