公开(公告)号：US06279585B1

公开(公告)日：2001-08-28

申请号：US09390679

申请日：1999-09-07

申请人： Satoshi Shiraki ,  Makoto Ohkawa

发明人： Satoshi Shiraki ,  Makoto Ohkawa

IPC分类号： H01L21302

CPC分类号： H01L27/1203 ,  H01L21/3211 ,  H01L21/32134 ,  H01L21/84

摘要： In a method for manufacturing a semiconductor device, a barrier metal disposed on a metallic thin film for forming a thin film resistor is patterned by wet-etching. The wet-etching produces a residue of the barrier metal. The residue is removed after the oxidation thereof. Accordingly the residue is completely removed. As a result, the patterning of the thin film resistor is stably performed, and short-circuit does not occur to a wiring pattern disposed above the barrier metal.

摘要翻译： 在制造半导体器件的方法中，通过湿法刻蚀图案化设置在用于形成薄膜电阻器的金属薄膜上的阻挡金属。 湿蚀刻产生阻挡金属的残留物。 残余物在氧化后除去。 因此残留物被完全除去。 结果，稳定地执行薄膜电阻器的图案化，并且在布置在阻挡金属之上的布线图案上不会发生短路。

公开(公告)号：US20070235842A1

公开(公告)日：2007-10-11

申请号：US11706225

申请日：2007-02-15

申请人： Makoto Ohkawa

发明人： Makoto Ohkawa

IPC分类号： H01L29/04 ,  B23K26/14

CPC分类号： B23K26/009 ,  B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78

摘要： A method for cutting a semiconductor device is provided. The device includes a first semiconductor layer, an insulation layer, and a second semiconductor layer. The method includes the steps of: forming a semiconductor part in the first semiconductor layer; irradiating a laser beam on a surface of the first semiconductor layer; and cutting the device into a semiconductor chip by using the laser beam. The laser beam is reflected at an interface so that a first reflected beam is generated, and the laser beam is reflected at another interface so that a second reflected beam is generated. The insulation film has a thickness, which is determined to weaken the first and second reflected beams each other.

摘要翻译： 提供了一种用于切割半导体器件的方法。 该器件包括第一半导体层，绝缘层和第二半导体层。 该方法包括以下步骤：在第一半导体层中形成半导体部分; 在所述第一半导体层的表面上照射激光束; 并通过使用激光束将器件切割成半导体芯片。 激光束在界面处被反射，使得产生第一反射光束，并且激光束在另一个界面处被反射，从而产生第二反射光束。 绝缘膜具有确定为使第一和第二反射光束彼此减弱的厚度。

公开(公告)号：US20050082644A1

公开(公告)日：2005-04-21

申请号：US10952782

申请日：2004-09-30

申请人： Makoto Ohkawa

发明人： Makoto Ohkawa

IPC分类号： H01L21/301 ,  B23K26/00 ,  B23K26/18 ,  B23K26/40 ,  B28D5/00 ,  H01L21/78 ,  H01L29/04

CPC分类号： B23K26/009 ,  B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78

摘要： A method for cutting a semiconductor device is provided. The device includes a first semiconductor layer, an insulation layer, and a second semiconductor layer. The method includes the steps of: forming a semiconductor part in the first semiconductor layer; irradiating a laser beam on a surface of the first semiconductor layer; and cutting the device into a semiconductor chip by using the laser beam. The laser beam is reflected at an interface so that a first reflected beam is generated, and the laser beam is reflected at another interface so that a second reflected beam is generated. The insulation film has a thickness, which is determined to weaken the first and second reflected beams each other.

摘要翻译： 提供了一种用于切割半导体器件的方法。 该器件包括第一半导体层，绝缘层和第二半导体层。 该方法包括以下步骤：在第一半导体层中形成半导体部分; 在所述第一半导体层的表面上照射激光束; 并通过使用激光束将器件切割成半导体芯片。 激光束在界面处被反射，使得产生第一反射光束，并且激光束在另一个界面处被反射，从而产生第二反射光束。 绝缘膜具有确定为使第一和第二反射光束彼此减弱的厚度。