摘要:
The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.
摘要:
The present invention provides a method of producing a zinc oxide film, which comprises applying current between a conductive base member immersed in an electrodepositing bath and a counter electrode immersed in the electrodepositing bath to form a zinc oxide film on the conductive base member, wherein the electrodepositing bath is maintained at a temperature of 50° C. or more and has a temperature profile such that the temperature of the electrodepositing bath is lower in the final stage of electrodeposition than in the initial of electrodeposition. By the present method, a zinc oxide film with the excellent effect of light containment is stably produced in a short time, thereby producing a solar cell with a high efficiency at low a cost.