Photovoltaic element
    11.
    发明授权
    Photovoltaic element 失效
    光伏元件

    公开(公告)号:US5401330A

    公开(公告)日:1995-03-28

    申请号:US275274

    申请日:1994-07-15

    摘要: The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.

    摘要翻译: 本发明的目的在于提供即使在恶劣的环境下长期使用也能够维持高的初始特性的光电元件,能够大批量生产。 一种光电元件,其中包括至少包含硅的非单晶半导体材料构成的光反射层,光反射倍增层,n型层,i型层和p型层,以及 透明电极依次形成在导电性基板上,其特征在于,所述光反射层包含银或铜原子作为主要成分,并且还含有氧,氮和碳中的至少一种。 此外,在另一个实施方案中,该光电元件的特征在于,所述光反射层包含银作为主要成分,并且还含有铅,铅和金,或铅,金和第一过渡族金属,其量为2至 100 ppm。

    Method of producing zinc oxide film, method of producing photovoltaic element, and method of producing semiconductor element substrate
    12.
    发明授权
    Method of producing zinc oxide film, method of producing photovoltaic element, and method of producing semiconductor element substrate 有权
    氧化锌膜的制造方法,光电元件的制造方法以及半导体元件基板的制造方法

    公开(公告)号:US06379521B1

    公开(公告)日:2002-04-30

    申请号:US09222848

    申请日:1998-12-30

    申请人: Yutaka Nishio

    发明人: Yutaka Nishio

    IPC分类号: C25D2106

    CPC分类号: C25D7/0614 C25D9/08 C25D21/02

    摘要: The present invention provides a method of producing a zinc oxide film, which comprises applying current between a conductive base member immersed in an electrodepositing bath and a counter electrode immersed in the electrodepositing bath to form a zinc oxide film on the conductive base member, wherein the electrodepositing bath is maintained at a temperature of 50° C. or more and has a temperature profile such that the temperature of the electrodepositing bath is lower in the final stage of electrodeposition than in the initial of electrodeposition. By the present method, a zinc oxide film with the excellent effect of light containment is stably produced in a short time, thereby producing a solar cell with a high efficiency at low a cost.

    摘要翻译: 本发明提供一种氧化锌膜的制造方法,其特征在于,在浸渍在电沉积槽中的导电性基材与浸渍在电沉积槽中的对电极之间施加电流,在导电性基材上形成氧化锌膜, 电沉积浴保持在50℃或更高的温度,并且具有温度分布,使得在电沉积的最后阶段中电沉积浴的温度低于电沉积初期的温度。 通过本方法,在短时间内稳定地制造出具有优异的光保护效果的氧化锌膜,从而以低的成本制造高效率的太阳能电池。