公开(公告)号：US20220207978A1

公开(公告)日：2022-06-30

申请号：US17435894

申请日：2020-02-13

Applicant: Hitachi, Ltd.

Inventor： Tetsuya ISHIMARU ,  Hiroyuki YOSHIMOTO ,  Yoshihiro WAKISAKA ,  Nobuyuki SUGII

IPC: G08B21/02 ,  H04R1/08 ,  G01L1/20 ,  G01P13/00 ,  G01P15/00

Abstract: A work detection determination system performs detection determination on a work with high accuracy.
The work detection determination system includes a glove that is worn on a hand of a worker and includes a microphone detecting a work sound of a hand operation in which the hand works on a work target through a contact of the hand with the work target, a pressure sensor detecting a pressure of a work of the hand operation, a motion sensor detecting a motion of the hand operation, and a transmitting unit transmitting a sound signal of the microphone, a pressure signal of the pressure sensor, and a motion signal of the motion sensor; a receiving unit that receives the sound signal, the pressure signal, and the motion signal transmitted from the transmitting unit; a work determination unit that performs detection determination of a work content of the worker by using the sound signal, the pressure signal, and the motion signal; and a notification unit that notifies a determination result of the work determination unit.

公开(公告)号：US20210404895A1

公开(公告)日：2021-12-30

申请号：US17345354

申请日：2021-06-11

Applicant: Hitachi, Ltd.

Inventor： Hiroyuki YOSHIMOTO ,  Ryotaro KAWAHARA ,  Ryohei MATSUI ,  Nobuyuki SUGII ,  Tsuneya KURIHARA ,  Hirohiko SAGAWA ,  Naoko USHIO ,  Motoki TAJIMA ,  Shingo KIRITA

IPC: G01L5/16 ,  G01L5/00 ,  G01B7/16

Abstract: Provided is a digitalization system capable of digitalizing the skills of delicate work. This digitalization system comprises a first sensor mounted on a work tool and which detects a deformation of the work tool when the work tool is pressed against a work target, a second sensor which detects a force applied to the work target or a force applied to the work tool when the work tool is pressed against the work target, and a computer which calculates an angle of a corner formed with the work tool and the work target based on sensor values acquired with the first sensor, and calculates a force applied to the work target when the work tool is pressed against the work target based on sensor values acquired with the second sensor.

公开(公告)号：US20210295053A1

公开(公告)日：2021-09-23

申请号：US17186613

申请日：2021-02-26

Applicant: Hitachi, Ltd.

Inventor： Hiroki OHASHI ,  Katsuyuki NAKAMURA ,  Hiroyuki YOSHIMOTO ,  Naoko USHIO

IPC: G06K9/00 ,  G06K9/20

Abstract: To accurately recognize observed objects.
An observed-object recognition system includes an observation region estimation portion, an existence region estimation portion, and an object recognition portion. The observation region estimation portion estimates an observation region that is relatively highly likely to be an observation point in at least one first-person image in a first-person video (a video based on the first-person perspective). Based on the observation region, the existence region estimation portion estimates an existence region that belongs to the first-person image and causes an observed object to exist. The object recognition portion recognizes an object in the estimated existence region of the first-person image.

公开(公告)号：US20220342480A1

公开(公告)日：2022-10-27

申请号：US17714309

申请日：2022-04-06

Applicant: HITACHI, LTD.

Inventor： Ryohei MATSUI ,  Ryotaro KAWAHARA ,  Tetsufumi KAWAMURA ,  Nobuyuki SUGII ,  Naoko USHIO ,  Hiroyuki YOSHIMOTO

IPC: G06F3/01 ,  G01L1/22 ,  G01L1/20

Abstract: A pressure sensor device, a method for manufacturing the pressure sensor device, and a work management system mitigating a degree of a false detection is presented. The pressure sensor device detecting pressure includes a flexible substrate base material having flexibility; a comb-teeth shape electrode having an exposed metal surface formed in a predetermined area on the flexible substrate base material; and a pressure-sensitive material that is provided on the comb-teeth shape electrode, varies in a resistance value depending on an amount of a load, and has a curvature in a static state.

公开(公告)号：US20180151709A1

公开(公告)日：2018-05-31

申请号：US15577501

申请日：2015-06-01

Applicant: HITACHI, LTD.

Inventor： Hiroyuki YOSHIMOTO ,  Naoki WATANABE

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417 ,  H01L29/36 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7395 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0273 ,  H01L21/0465 ,  H01L21/049 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/4236 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397 ,  H03K17/567

Abstract: An n-type drift layer DRL formed on a buffer layer BUF in a semiconductor device (SiC-IGBT) is configured so as to have (c1) an n-type first drift region DRL1 formed on the buffer layer BUF and (c2) an n-type second drift region DRL2 formed on the first drift region DRL1, (c3) an impurity concentration of the first drift region DRL1 is made lower than an impurity concentration of the buffer layer BUF and higher than an impurity concentration of the second drift region DRL2, and (c4) the first drift region DRL1 is made thinner than the second drift region DRL2. By forming the drift layer DRL so as to have a stacked structure as described above, an electric field on a surface on an emitter region side can be lowered at the OFF time of the semiconductor device even if a high voltage is applied. Moreover, at the time of switching, noises can be reduced since a carrier-stored region can be ensured.

公开(公告)号：US20160284690A1

公开(公告)日：2016-09-29

申请号：US14914883

申请日：2013-08-29

Applicant: HITACHI, LTD.

Inventor： Hiroyuki YOSHIMOTO ,  Akio SHIMA ,  Digh HISAMOTO

IPC: H01L27/06 ,  H01L29/66 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/36 ,  H01L29/739 ,  H01L29/10

CPC classification number: H01L27/0623 ,  H01L21/2253 ,  H01L21/8249 ,  H01L29/0619 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/407 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/78

Abstract: An IGBT (50) includes a p+ collector region (3) and an n−− drift region (1), in which a first transistor (TR1) and a second transistor (TR2) are formed on the n−− drift region (1). In the n−− drift region (1), a p-type hole extraction region (14) is formed in contact with the second transistor (TR2). When the IGBT (50) is in an on-state, electrons and holes flow through the first transistor (TR1), but a current does not flow through the second transistor (TR2). On the other hand, when the IGBT (50) is switched from the on-state to an off-state, holes flow through the first transistor (TR1), and holes flow through the hole extraction region (14) and the second transistor (TR2).

Abstract translation: IGBT（50）包括p +集电极区（3）和n漂移区（1），其中在漂移区（1）上形成第一晶体管（TR1）和第二晶体管（TR2） ）。 在n漂移区域（1）中，形成与第二晶体管（TR2）接触的p型空穴提取区域（14）。 当IGBT（50）处于导通状态时，电子和空穴流过第一晶体管（TR1），但电流不流过第二晶体管（TR2）。 另一方面，当IGBT（50）从导通状态切换到断开状态时，空穴流过第一晶体管（TR1），空穴流过空穴取出区域（14）和第二晶体管（ TR2）。