公开(公告)号：US20230298983A1

公开(公告)日：2023-09-21

申请号：US17928724

申请日：2021-02-26

Applicant: Hitachi Astemo, Ltd.

Inventor： Osamu IKEDA ,  Yusuke TAKAGI ,  Yujiro KANEKO ,  Shota FUNATO

IPC: H01L23/495 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/49582 ,  H01L24/32 ,  H01L24/33 ,  H01L24/29 ,  H01L21/4821 ,  H01L24/83 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29139 ,  H01L2224/83801 ,  H01L2224/83455 ,  H01L2224/83447

Abstract: A semiconductor device includes: a semiconductor element; and a first conductor and a second conductor respectively joined to a first surface and a second surface of the semiconductor element via Sn-based solder, in which a Ni-based plated layer is formed on surfaces of the first conductor and the second conductor that oppose the Sn-based solder and on the first surface and the second surface of the semiconductor element, and an interface reaction inhibition layer made of (Cu, Ni)6Sn5 and having a layer thickness of 1.2 to 4.0 μm is formed at an interface between the Ni-based plated layer and the Sn-based solder.

公开(公告)号：US20230119278A1

公开(公告)日：2023-04-20

申请号：US17910201

申请日：2020-12-25

Applicant: Hitachi Astemo, Ltd.

Inventor： Nobutake TSUYUNO ,  Yusuke TAKAGI ,  Yujiro KANEKO

IPC: H01L25/18 ,  H02M7/00 ,  H01L25/07 ,  H01L21/56 ,  H01L23/473 ,  H01L23/31 ,  H01L23/495

Abstract: Provided is an electric circuit body including: a power semiconductor element; a first conductor plate configured to be connected to one surface of the power semiconductor element; a first sheet-shaped member having a first resin insulation layer and configured to at least cover a surface of the first conductor plate; a sealing material configured to seal each of the power semiconductor element, the first conductor plate, and an end of the first sheet-shaped member; and a first cooling member configured to be adhesively attached to the first sheet-shaped member. In the electric circuit body, the first sheet-shaped member includes : an embedded portion where the end of the first sheet-shaped member is covered with the sealing material; a heat dissipation surface as a region to overlap the surface of the first conductor plate; and a margin as a region between the embedded portion and the heat dissipation surface, the margin is located more inward than the heat dissipation surface, and the embedded portion is located more inward than the margin.

公开(公告)号：US20220375820A1

公开(公告)日：2022-11-24

申请号：US17772943

申请日：2020-09-29

Applicant: HITACHI ASTEMO, LTD.

Inventor： Hiromi SHIMAZU ,  Yujiro KANEKO ,  Eiichi IDE ,  Yusuke TAKAGI ,  Hisashi TANIE

IPC: H01L23/40 ,  H01L25/07 ,  H01L25/18 ,  H05K7/20

Abstract: A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layer 5 abuts on a heat dissipation surface 4a of a circuit body 100, and a heat dissipation member 7 abuts on the outside of the thermally conductive layer 5, which is a side of the heat dissipation surface 4a of the circuit body 100. A fixing member 8 abuts on a side of the circuit body 100 opposite to the heat dissipation surface 4a. A connection member 9 is penetrated at the respective end portions of the heat dissipation member 7 and the fixing member 8. FIG. 3 illustrates a state before a bolt and a nut of the connection member 9 are tightened. The heat dissipation member 7 holds a curved shape such that the central portion of the heat dissipation member 7 protrudes toward the circuit body 100. The bolt and the nut of the connection member 9 are fastened and fixed at both ends of the heat dissipation member 7 and the fixing member 8 so as to sandwich the circuit body 100. The heat dissipation member 7 is elastically deformed to bring the heat dissipation member 7 into close contact with the heat dissipation surface 4a of the circuit body 100 via the thermally conductive layer 5, and surface pressure is applied from the heat dissipation member 7 to the heat dissipation surface 4a.