公开(公告)号：US08883584B2

公开(公告)日：2014-11-11

申请号：US13700808

申请日：2012-09-05

申请人： Lingkuan Meng

发明人： Lingkuan Meng

IPC分类号： H01L21/336 ,  H01L29/66

CPC分类号： H01L29/66545 ,  H01L21/31116

摘要： A method of manufacturing a semiconductor device is disclosed. The method may comprise: forming a gate stack on a substrate; depositing a dielectric layer on the substrate and the gate stack; performing a main etching operation on the dielectric layer to form a spacer, with a remainder of the dielectric layer left on the substrate; and performing an over etching operation to remove the remainder of the dielectric layer. According to the method disclosed herein, two etching operations where an etching gas comprises a helium gas are performed, without forming an etching stop layer of silicon oxide. As a result, it is possible to reduce damages to the substrate and also to reduce the process complexity. Further, it is possible to optimize a threshold voltage, effectively reduce an EOT, and enhance a gate control capability and a driving current.

摘要翻译： 公开了制造半导体器件的方法。 该方法可以包括：在衬底上形成栅叠层; 在基板和栅极堆叠上沉积介电层; 在介电层上进行主蚀刻操作以形成间隔物，剩余的电介质层留在基片上; 并执行过蚀刻操作以去除电介质层的其余部分。 根据本文公开的方法，执行蚀刻气体包括氦气的两种蚀刻操作，而不形成氧化硅的蚀刻停止层。 结果，可以减少对基板的损伤，并且还可以降低工艺的复杂性。 此外，可以优化阈值电压，有效地减少EOT，并且增强门控制能力和驱动电流。

公开(公告)号：US20140011332A1

公开(公告)日：2014-01-09

申请号：US13700808

申请日：2012-09-05

申请人： Lingkuan Meng

发明人： Lingkuan Meng

IPC分类号： H01L29/66

CPC分类号： H01L29/66545 ,  H01L21/31116

摘要： A method of manufacturing a semiconductor device is disclosed. The method may comprise: forming a gate stack on a substrate; depositing a dielectric layer on the substrate and the gate stack; performing a main etching operation on the dielectric layer to form a spacer, with a remainder of the dielectric layer left on the substrate; and performing an over etching operation to remove the remainder of the dielectric layer. According to the method disclosed herein, two etching operations where an etching gas comprises a helium gas are performed, without forming an etching stop layer of silicon oxide. As a result, it is possible to reduce damages to the substrate and also to reduce the process complexity. Further, it is possible to optimize a threshold voltage, effectively reduce an EOT, and enhance a gate control capability and a driving current.

摘要翻译： 公开了制造半导体器件的方法。 该方法可以包括：在衬底上形成栅叠层; 在基板和栅极堆叠上沉积介电层; 在介电层上进行主蚀刻操作以形成间隔物，剩余的电介质层留在基片上; 并执行过蚀刻操作以去除电介质层的其余部分。 根据本文公开的方法，执行蚀刻气体包括氦气的两种蚀刻操作，而不形成氧化硅的蚀刻停止层。 结果，可以减少对基板的损伤，并且还可以降低工艺的复杂性。 此外，可以优化阈值电压，有效地降低EOT，并且增强门控制能力和驱动电流。

公开(公告)号：US20140011303A1

公开(公告)日：2014-01-09

申请号：US13700775

申请日：2012-09-05

申请人： Lingkuan Meng

发明人： Lingkuan Meng

IPC分类号： H01L29/66

CPC分类号： H01L29/66477 ,  H01L21/31116 ,  H01L22/26 ,  H01L29/66545 ,  H01L29/6656

摘要： A method of manufacturing a semiconductor device is disclosed. The method may comprise: forming a gate stack on a substrate; depositing a first dielectric layer and a second dielectric layer sequentially on the substrate and the gate stack; and etching the second dielectric layer and the first dielectric layer sequentially with an etching gas containing helium to form a second spacer and a first spacer, respectively. According to the method disclosed herein, a dual-layer complex spacer configuration is achieved, and two etching operations where the etching gas comprises the helium gas are performed. As a result, it is possible to reduce damages to the substrate and also to reduce the process complexity. Further, it is possible to optimize a threshold voltage, effectively reduce an EOT, and enhance a gate control capability and a driving current.

摘要翻译： 公开了制造半导体器件的方法。 该方法可以包括：在衬底上形成栅叠层; 在衬底和栅极堆叠上依次沉积第一介电层和第二介质层; 以及分别用包含氦的蚀刻气体依次蚀刻所述第二介电层和所述第一介电层，以分别形成第二间隔物和第一间隔物。 根据本文公开的方法，实现双层复合间隔物配置，并且执行蚀刻气体包括氦气的两种蚀刻操作。 结果，可以减少对基板的损伤，并且还可以降低工艺的复杂性。 此外，可以优化阈值电压，有效地降低EOT，并且增强门控制能力和驱动电流。

公开(公告)号：US20130034969A1

公开(公告)日：2013-02-07

申请号：US13504962

申请日：2012-01-10

申请人： Lingkuan Meng

发明人： Lingkuan Meng

IPC分类号： H01L21/314

CPC分类号： H01L21/76819 ,  C23C16/4401 ,  C23C16/50 ,  C23C16/54

摘要： The present invention provides a thin film deposition method, comprising: seasoning a first deposition chamber; seasoning a second deposition chamber; pre-processing the first deposition chamber, depositing a thin film in the first deposition chamber, cleaning the first deposition chamber, post-processing and withdrawing the wafers; pre-processing the second deposition chamber, depositing a thin film in the second deposition chamber, cleaning the second deposition chamber, post-processing and withdrawing the wafers; characterized in that there is a time interval between the step of seasoning the second deposition chamber and the step of seasoning the first deposition chamber. The method of stabilizing the thin film thickness of the present invention can well solve the problem that the thin film on the first pair of wafers of each batch of products becomes thinner or thicker during the deposition. In addition, the present invention greatly reduces the influences from human activities without increasing the seasoning wafers, thus realizing automation; moreover, the affected wafers no longer need to be scraped, thus increasing the yield of products.

摘要翻译： 本发明提供一种薄膜沉积方法，包括：调节第一沉积室; 调味第二沉积室; 预处理第一沉积室，在第一沉积室中沉积薄膜，清洁第一沉积室，后处理和取出晶片; 预处理第二沉积室，在第二沉积室中沉积薄膜，清洗第二沉积室，后处理和取出晶片; 其特征在于，在调节第二沉积室的步骤与调节第一沉积室的步骤之间存在时间间隔。 稳定本发明薄膜厚度的方法可以很好地解决在沉积期间每批产品的第一对晶片上的薄膜变得更薄或更厚的问题。 此外，本发明大大降低了人体活动的影响，而不增加调味片，从而实现自动化; 此外，受影响的晶片不再需要刮擦，从而提高产品的产量。