公开(公告)号：US08238918B2

公开(公告)日：2012-08-07

申请号：US11911840

申请日：2005-04-19

申请人： Sang-Yun Lee ,  Jae-Young Ju ,  Hee-Hyeok Hahm ,  Young-Ho Joo ,  Bum-Soo Shin ,  Kyeong-Hee Han

发明人： Sang-Yun Lee ,  Jae-Young Ju ,  Hee-Hyeok Hahm ,  Young-Ho Joo ,  Bum-Soo Shin ,  Kyeong-Hee Han

IPC分类号： H04W36/00

CPC分类号： H04W36/14

摘要： The present invention relates to a method of performing handover from an asynchronous mobile communication network to a synchronous mobile communication network. If the access network of the asynchronous mobile communication network (100) requests handover to an MSC (104) of the asynchronous mobile communication network, the MSC requests/receives subscriber information of the mobile communication terminal from a dual-stack HLR (300), and transmits a handover request message to the synchronous mobile communication network (200). The MSC (203) of the synchronous mobile communication network assigns a forward channel to the mobile communication terminal. The asynchronous mobile communication network (100) transmits a handover instruction message to the asynchronous RF device of the mobile communication terminal. Accordingly, the mobile communication terminal sets up a synchronous RF device, connects to the synchronous mobile communication network through reverse channel assignment and synchronization. The mobile communication terminal transmits a handover completion message to the synchronous mobile communication network.

摘要翻译： 本发明涉及一种执行从异步移动通信网络到同步移动通信网络的切换的方法。 如果异步移动通信网络（100）的接入网络请求切换到异步移动通信网络的MSC（104），则MSC从双栈HLR（300）请求/接收移动通信终端的用户信息， 并向同步移动通信网络（200）发送切换请求消息。 同步移动通信网络的MSC（203）向移动通信终端分配前向信道。 异步移动通信网络（100）向移动通信终端的异步RF设备发送切换指示消息。 因此，移动通信终端设置同步RF设备，通过反向信道分配和同步连接到同步移动通信网络。 移动通信终端向同步移动通信网络发送切换完成消息。

公开(公告)号：US07489658B2

公开(公告)日：2009-02-10

申请号：US10497409

申请日：2002-12-28

申请人： Soo-Jin Kim ,  Hyung-Joon Cho ,  Hee-Hyeok Hahm ,  Sang-Yun Lee

发明人： Soo-Jin Kim ,  Hyung-Joon Cho ,  Hee-Hyeok Hahm ,  Sang-Yun Lee

IPC分类号： H04Q7/00 ,  H04L12/28 ,  H04J3/16

CPC分类号： H04W88/16

摘要： A dual stack mobile communication system is provided for building a single interworking network of an asynchronous network and a synchronous network. A single node is formed by combining the same kind nodes of the asynchronous network and the synchronous network, wherein the single node searches information for generating two output signal points according to a synchronous protocol and an asynchronous protocol in one input signal point according to the synchronous protocol or asynchronous protocol, and generates one output signal point.

摘要翻译： 提供了一种双栈移动通信系统，用于构建异步网络和同步网络的单个互通网络。 通过组合异步网络和同步网络的同类节点形成单个节点，其中单个节点根据同步协议和异步协议在一个输入信号点中根据同步搜索用于生成两个输出信号点的信息 协议或异步协议，并产生一个输出信号点。

公开(公告)号：US20080002824A1

公开(公告)日：2008-01-03

申请号：US10589550

申请日：2004-10-20

申请人： Yeong-Tae No ,  Sang-Yun Lee ,  Hee-Hyeok Hahm ,  Ki-Mun Kim ,  Jae-Young Park ,  Soon-Ki Hwang

发明人： Yeong-Tae No ,  Sang-Yun Lee ,  Hee-Hyeok Hahm ,  Ki-Mun Kim ,  Jae-Young Park ,  Soon-Ki Hwang

IPC分类号： H04M3/02

CPC分类号： H04M3/42017 ,  H04M3/307 ,  H04M3/42093

摘要： A method and apparatus for a called subscriber to send a sound for his own personal information as a ringback tone with a ringback tone replacing sound are disclosed. The method comprises the steps of: HLR providing MSC with the first information about whether a ringback tone is to be replaced or not and the second information for routing to sound providing means when a called terminal is registered in MSC; MSC requesting a call connection to the sound providing means based on the first and second information when the called terminal is called; and the sound providing means call-connecting to the calling terminal, and providing the calling terminal with a specific sound, wherein the specific sound is generated by combining a subscriber information sound, which can identify the called subscriber or can represent the subscriber's character, with the ringback tone replacing sound.

摘要翻译： 公开了一种被叫用户为自己的个人信息发送声音作为具有回铃音替换声的回铃音的方法和装置。 该方法包括以下步骤：HLR向MSC提供关于是否更换回铃音的第一信息，以及当被叫终端在MSC中注册时用于路由到声音提供装置的第二信息; 当被叫终端被调用时，MSC根据第一和第二信息请求与声音提供装置的呼叫连接; 呼叫连接到呼叫终端的声音提供装置，并向主叫终端提供特定的声音，其特征在于，通过组合可以识别被叫用户或可以表示用户角色的用户信息声音来生成特定声音， 回铃音更换声音。

公开(公告)号：US07221952B2

公开(公告)日：2007-05-22

申请号：US10523859

申请日：2003-03-31

申请人： Il-Weon Cho ,  Hyung-Joon Cho ,  Hee-Hyeok Hahm ,  Sang-Yun Lee

发明人： Il-Weon Cho ,  Hyung-Joon Cho ,  Hee-Hyeok Hahm ,  Sang-Yun Lee

IPC分类号： H04Q7/20

CPC分类号： H04W88/184 ,  H04W4/14 ,  H04W28/08

摘要： The present invention relates to a method for processing an address of a short message service center in a WCDMA network, including: a load centralization confirmation step where an operation control unit receives short message processing states from each short message service center, confirms load centralization states of each short message service center, and generates an operation message; a path setup step where a mobile switching center receives a short message from a mobile station, and sets up a transmission path of the short message according to the operation message; and an optimal transmission step where the mobile switching center transmits the short message from the mobile station to the corresponding short message service center through the transmission path according to the result of the path setup step. When a lot of messages are centralized to a specific short message service center due to call habits of subscribers, some subscribers of the short message service center arc distributed to another short message service center, and thus service center reception ability is predictable. It is also possible to actively cope with civil appeals and troubles.

摘要翻译： 本发明涉及一种用于处理WCDMA网络中短消息服务中心地址的方法，包括：负载集中确认步骤，其中操作控制单元从每个短消息服务中心接收短消息处理状态，确认负载集中状态 的每个短消息服务中心，并产生一个操作消息; 路径设置步骤，其中移动交换中心从移动站接收短消息，并根据操作消息建立短消息的传输路径; 以及最佳传输步骤，其中移动交换中心根据路径建立步骤的结果，通过传输路径将短消息从移动站发送到对应的短消息服务中心。 当由于用户的呼叫习惯而将大量消息集中到特定的短消息服务中心时，短消息服务中心的一些用户分配给另一个短消息服务中心，从而可以预测服务中心的接收能力。 也可以积极应对民事诉讼和麻烦。

公开(公告)号：US20090129359A1

公开(公告)日：2009-05-21

申请号：US11911840

申请日：2005-04-19

申请人： Sang-Yun Lee ,  Jae-Young Ju ,  Hee-Hyeok Hahm ,  Young-Ho Joo ,  Bum-Soo Shin ,  Kyeong-Hee Han

发明人： Sang-Yun Lee ,  Jae-Young Ju ,  Hee-Hyeok Hahm ,  Young-Ho Joo ,  Bum-Soo Shin ,  Kyeong-Hee Han

IPC分类号： H04B7/216

CPC分类号： H04W36/14

摘要： The present invention relates to a method of performing handover from an asynchronous mobile communication network to a synchronous mobile communication network. If the access network of the asynchronous mobile communication network (100) requests handover to an MSC (104) of the asynchronous mobile communication network, the MSC requests/receives subscriber information of the mobile communication terminal from a dual-stack HLR (300), and transmits a handover request message to the synchronous mobile communication network (200). The MSC (203) of the synchronous mobile communication network assigns a forward channel to the mobile communication terminal. The asynchronous mobile communication network (100) transmits a handover instruction message to the asynchronous RF device of the mobile communication terminal. Accordingly, the mobile communication terminal sets up a synchronous RF device, connects to the synchronous mobile communication network through reverse channel assignment and synchronization. The mobile communication terminal transmits a handover completion message to the synchronous mobile communication network.

摘要翻译： 本发明涉及一种执行从异步移动通信网络到同步移动通信网络的切换的方法。 如果异步移动通信网络（100）的接入网络请求切换到异步移动通信网络的MSC（104），则MSC从双栈HLR（300）请求/接收移动通信终端的用户信息， 并向同步移动通信网络（200）发送切换请求消息。 同步移动通信网络的MSC（203）向移动通信终端分配前向信道。 异步移动通信网络（100）向移动通信终端的异步RF设备发送切换指示消息。 因此，移动通信终端设置同步RF设备，通过反向信道分配和同步连接到同步移动通信网络。 移动通信终端向同步移动通信网络发送切换完成消息。

公开(公告)号：US11769809B2

公开(公告)日：2023-09-26

申请号：US17083026

申请日：2020-10-28

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/792 ,  H10B43/27 ,  H01L29/423 ,  H01L25/18 ,  H01L29/40 ,  H01L29/06 ,  H10B12/00 ,  H10B43/35 ,  H10B43/40

CPC分类号： H01L29/4234 ,  H01L25/18 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/66666 ,  H01L29/66833 ,  H01L29/7827 ,  H01L29/7926 ,  H10B12/05 ,  H10B12/31 ,  H10B12/50 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40

摘要： Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.

公开(公告)号：US20220392913A1

公开(公告)日：2022-12-08

申请号：US17340371

申请日：2021-06-07

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L27/11573 ,  H01L23/535 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11578

摘要： Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

公开(公告)号：US20220392910A1

公开(公告)日：2022-12-08

申请号：US17347237

申请日：2021-06-14

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L27/11529 ,  H01L27/11551 ,  H01L27/11573 ,  H01L27/11578 ,  G11C5/06 ,  H01L23/48

摘要： Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

公开(公告)号：US20220139918A1

公开(公告)日：2022-05-05

申请号：US17084420

申请日：2020-10-29

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L27/108 ,  H01L29/78

摘要： Novel three-dimensional DRAM structures are disclosed, together with methods of making the same. Each DRAM cell comprises a vertical transistor and a storage capacitor stacked vertically. Storage capacitors are arranged in a rectangular pattern in the array of DRAM cells. This arrangement improves the area efficiency of storage capacitors over honeycomb type. A first embodiment of the present disclosure uses cup-shaped storage capacitors. The exterior of the cup as well as the interior may contribute to the capacitance. In a second embodiment, a single capacitor pillar forms the internal electrode of each storage capacitor. A third embodiment employs double-pillar storage capacitors. Common to all embodiments are options to dispose contact plugs between vertical transistors and storage capacitors, dispose an etch-stop layer over the gate of vertical transistors, dispose one or more mesh layers for storage capacitors, and widen semiconductor pillars within available space in bit-line direction.

公开(公告)号：US20220130973A1

公开(公告)日：2022-04-28

申请号：US17083026

申请日：2020-10-28

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L29/423 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/108 ,  H01L27/11573 ,  H01L25/18 ,  H01L29/40 ,  H01L29/66 ,  H01L29/792 ,  H01L29/78

摘要： Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.