公开(公告)号：US20190271660A1

公开(公告)日：2019-09-05

申请号：US16292139

申请日：2019-03-04

Applicant: IMEC vzw

Inventor： Boon Teik Chan ,  Zheng Tao ,  Jean-Francois de Marneffe ,  Chang Chen

IPC: G01N27/414 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  G01N33/487 ,  C12Q1/6869

Abstract: The disclosed technology generally relates to a method of forming a nanoscale opening in a semiconductor structure, and more particularly to forming a nanoscale opening that can be used for sensing the presence of polymers, e.g., the individual bases of deoxyribonucleic acid (DNA) or ribonucleic acid (RNA). In one aspect, a method of forming a nanopore in a semiconductor fin includes providing a fin structure comprising a bottom layer and a top layer, pattering the top layer to form a pillar, and laterally embedding the pillar in a filler material. The method additionally includes forming an aperture in the filler material by removing the pillar, and forming the nanopore in the bottom layer by etching through the aperture. In another aspect, a semiconductor fin is fabricated using the method.

公开(公告)号：US09847262B2

公开(公告)日：2017-12-19

申请号：US14958771

申请日：2015-12-03

Applicant: IMEC VZW

Inventor： Vladimir Samara ,  Jean-Francois de Marneffe

IPC: H01L21/302 ,  H01L21/66 ,  H01L21/3065 ,  H01J37/32 ,  G01B11/30

CPC classification number: H01L22/12 ,  G01B11/30 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065

Abstract: A method is provided for in-situ monitoring of etch uniformity during plasma etching, on the basis of the detection of interferometry patterns. The method is applicable to a reactor wherein a plasma is created in the area between the surface to be etched and a counter-surface arranged essentially parallel to the surface to be etched. The occurrence of interference patterns is detected at a location that is placed laterally with respect to the area between the surface to be etched and the counter-surface. The presence of an interference pattern at a particular wavelength is observed through the detection of oscillations of the light intensity measured by an optical detector, preferably by the standard Optical Emission Spectrometry tool of the reactor. When these oscillations are no longer detectable, non-uniformity exceeds a pre-defined limit. The counter surface is arranged such that the oscillations are detected.