公开(公告)号：US20190127599A1

公开(公告)日：2019-05-02

申请号：US16175171

申请日：2018-10-30

Applicant: Industrial Technology Research Institute

Inventor： Jer-Young CHEN ,  Yi-Tsung PAN ,  Shinn-Jen CHANG ,  Cha-Wen CHANG ,  Feng-Meei WU ,  Chen-Yu CHEN ,  Ping-Chen CHEN ,  Ching-Sung CHEN

IPC: C09D11/107 ,  C09D11/38 ,  C09D11/03 ,  C08F293/00 ,  B33Y10/00 ,  B33Y70/00 ,  B29C64/165

Abstract: A dispersion of IR absorption particles is provided, which includes 100 parts by weight of IR absorption particles, 5 to 30 parts by weight of diblock copolymer, and 200 to 910 parts by weight of water, wherein the diblock copolymer includes (a) first block of and (b) second block of wherein (a) first block is chemically bonded to (b) second block; R1 is H or CH3; R2 is H or CH3; R3 is R4 is C1-10 alkyl group; M⊕ is Na+, NH4+, or NH(C2H4OH)3+; m=10-20; n=2-20; and x=0-4.

公开(公告)号：US20170162873A1

公开(公告)日：2017-06-08

申请号：US15433612

申请日：2017-02-15

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Hsiao-Feng HUANG ,  Ping-Chen CHEN ,  Chun-Hsiang WEN ,  Wei-Jen LIU

IPC: H01M4/583 ,  H01G11/36 ,  H01G11/86 ,  B05D1/42 ,  H01M4/62 ,  H01M4/04 ,  H01M4/1393 ,  B05D3/14 ,  H01G11/38 ,  H01M10/0525

CPC classification number: H01M4/583 ,  B05D1/42 ,  B05D3/148 ,  H01G11/36 ,  H01G11/38 ,  H01G11/86 ,  H01M4/0402 ,  H01M4/0404 ,  H01M4/0409 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/621 ,  H01M4/624 ,  H01M10/0525 ,  Y02E60/13

Abstract: A graphene electrode, an energy storage device employing the same, and a method for fabricating the same are provided. The graphene electrode includes a metal foil, a non-doped graphene layer, and a hetero-atom doped graphene layer. Particularly, the hetero-atom doped graphene layer is separated from the metal foil by the non-doped graphene layer.

公开(公告)号：US20170052114A1

公开(公告)日：2017-02-23

申请号：US14831248

申请日：2015-08-20

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ding-Zheng LIN ,  Yi-Ping CHEN ,  Ping-Chen CHEN

IPC: G01N21/552

CPC classification number: G01N21/554 ,  B82Y20/00 ,  G01N21/658 ,  Y10S977/954

Abstract: A sensing chip is provided, which includes a substrate and a plurality of nano structures periodically arranged on the substrate, wherein each of the nano structures includes a bottom metal layer disposed on the substrate, a middle dielectric layer disposed on the bottom metal layer, and a top metal layer disposed on the middle dielectric layer. The bottom metal layer has an area that is larger than that of the top metal layer.

Abstract translation: 提供一种感测芯片，其包括基板和周期性地布置在基板上的多个纳米结构，其中每个纳米结构包括设置在基板上的底部金属层，设置在底部金属层上的中间介电层，以及 设置在中间介电层上的顶层金属层。 底部金属层的面积大于顶部金属层的面积。

公开(公告)号：US20140362373A1

公开(公告)日：2014-12-11

申请号：US14164742

申请日：2014-01-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ding-Zheng LIN ,  Tsung-Dar CHENG ,  Hsiao-Feng HUANG ,  Ping-Chen CHEN

IPC: G01N21/65

CPC classification number: G01N21/658

Abstract: The disclosure provides a surface-enhanced Raman scattering substrate, including: a surface-enhanced Raman scattering (SERS)-active substrate; a patterned hydrophilic region and a patterned hydrophobic region formed on the SERS-active substrate, wherein a water contact angle difference between the patterned hydrophilic region and the patterned hydrophobic region is in a range from about 29 degrees to about 90 degrees.

Abstract translation: 本公开提供了表面增强拉曼散射基底，包括：表面增强拉曼散射（SERS）活性基底; 图案化的亲水区域和形成在SERS活性基底上的图案化疏水区域，其中图案化亲水区域和图案化疏水区域之间的水接触角差在约29度至约90度的范围内。