公开(公告)号：US11094587B2

公开(公告)日：2021-08-17

申请号：US15570857

申请日：2015-06-03

Applicant: Intel Corporation

Inventor： Christopher J. Jezewski ,  Srijit Mukherjee ,  Daniel B. Bergstrom ,  Tejaswi K. Indukuri ,  Flavio Griggio ,  Ramanan V. Chebiam ,  James S. Clarke

IPC: H01L23/48 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: In one embodiment, a conductive connector for a microelectronic component may be formed with a noble metal layer, acting as an adhesion/wetting layer, disposed between a barrier liner and a conductive fill material. In a further embodiment, the conductive connector may have a noble metal conductive fill material disposed directly on the barrier liner. The use of a noble metal as an adhesion/wetting layer or as a conductive fill material may improve gapfill and adhesion, which may result in the conductive connector being substantially free of voids, thereby improving the electrical performance of the conductive connector relative to conductive connectors without a noble metal as the adhesion/wetting layer or the conductive fill material.

公开(公告)号：US10026649B2

公开(公告)日：2018-07-17

申请号：US15528425

申请日：2014-12-23

Applicant: INTEL CORPORATION

Inventor： Yuriy V. Shusterman ,  Flavio Griggio ,  Tejaswi K. Indukuri ,  Ruth A. Brain

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768 ,  H01L23/532 ,  H01L21/3213 ,  H01L21/321 ,  H01L23/31 ,  H01L23/528

Abstract: Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a portion of the trench is filled with the first metal. The previously deposited first barrier layer is removed along with the first metal, thereby re-exposing the upper sidewalls of the trench. A second barrier layer is conformally deposited onto the top of the first metal and the now re-exposed trench sidewalls. A second metal fill is blanket deposited into the remaining trench. Planarization and/or etching can be carried out as needed for subsequent processing. Thus, a methodology for filling high aspect ratio vias using a dual metal process is provided. Note, however, the first and second fill metals may be the same.