公开(公告)号：US11373995B2

公开(公告)日：2022-06-28

申请号：US16643928

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/778 ,  H01L27/02 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L27/07

Abstract: A Group III-Nitride (III-N) device structure is presented comprising: a heterostructure having three or more layers comprising III-N material, a cathode comprising donor dopants, wherein the cathode is on a first layer of the heterostructure,
an anode within a recess that extends through two or more of the layers of the heterostructure, wherein the anode comprises a first region wherein the anode is separated from the heterostructure by a high k dielectric material, and a second region wherein the anode is in direct contact with the heterostructure, and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.