公开(公告)号：US20230197527A1

公开(公告)日：2023-06-22

申请号：US17554061

申请日：2021-12-17

Applicant: Intel Corporation

Inventor： Richard Geiger ,  Peter Baumgartner ,  Alexander Bechtold ,  Uwe Hodel ,  Richard Hudeczek ,  Walther Lutz ,  Carla Moran Guizan ,  Georgios Panagopoulos ,  Johannes Xaver Rauh ,  Roshini Sachithanandan

IPC: H01L21/8238 ,  H01L23/528 ,  H01L23/535 ,  H01L23/522 ,  H01L27/092

CPC classification number: H01L21/823871 ,  H01L21/823821 ,  H01L23/5286 ,  H01L23/535 ,  H01L23/5226 ,  H01L27/0924

Abstract: IC devices including semiconductor devices isolated by BSRs are disclosed. An example IC device includes a first and a second semiconductor devices, a support structure, and a BSR. The BSR defines boundaries of a first and second section in the support structure. At least a portion of the first semiconductor device is in the first section, and at least a portion of the second semiconductor device is in the second section. The first semiconductor device is isolated from the second semiconductor device by the BSR. Signals from the first semiconductor device would not be transmitted to the second semiconductor device through the support structure. The BSR may be connected to a TSV or be biased. The IC device may include additional BSRs to isolate the first and second semiconductor devices. An BSR may be a power rail used for delivering power.

公开(公告)号：US11424354B2

公开(公告)日：2022-08-23

申请号：US16642867

申请日：2017-09-29

Applicant: Intel Corporation

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20

Abstract: A Group III-Nitride (III-N) device structure is provided comprising: a heterostructure having three or more layers comprising III-N material, an anode n+ region and a cathode comprising donor dopants, wherein the anode n+ region and the cathode are on the first layer of the heterostructure and wherein the anode n+ region and the cathode extend beyond the heterostructure, and an anode metal region within a recess that extends through two or more of the layers, wherein the anode metal region is in electrical contact with the first layer, wherein the anode metal region comprises a first width within the recess and a second width beyond the recess, and wherein the anode metal region is coupled with the anode n+ region. Other embodiments are also disclosed and claimed.

公开(公告)号：US20230252214A1

公开(公告)日：2023-08-10

申请号：US17666616

申请日：2022-02-08

Applicant: Intel Corporation

Inventor： Richard Hudeczek ,  Carla Moran Guizan ,  Peter Baumgartner ,  Richard Geiger ,  Alexander Bechtold ,  Uwe Hodel ,  Walther Lutz ,  Georgios Panagopoulos ,  Johannes Xaver Rauh ,  Roshini Sachithanandan

IPC: G06F30/392 ,  H01L27/02

CPC classification number: G06F30/392 ,  H01L27/0207

Abstract: Methods for providing fill patterns for IC devices are disclosed. An example method includes detecting a first device and a second device in an image, e.g., a two- or three-dimensional image representing the IC device. A line is defined based on the devices. The line divides the image into a first section and a second section. A first structure is generated based on the first device. A second structure is generated based on the second device. The second structure is a mirror image of the first structure across the line. A first fill pattern is generated in the first section based on the first structure. A second fill pattern is generated in the second section based on the first fill pattern, e.g., through a reflection transformation of the first fill pattern across the line. The two fill patterns represent patterns of fill structures to be included in the IC device.

公开(公告)号：US20220320350A1

公开(公告)日：2022-10-06

申请号：US17848275

申请日：2022-06-23

Applicant: Intel Corporation

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/93 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

公开(公告)号：US12034085B2

公开(公告)日：2024-07-09

申请号：US17848275

申请日：2022-06-23

Applicant: Intel Corporation

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L29/93

CPC classification number: H01L29/93 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

公开(公告)号：US20230197598A1

公开(公告)日：2023-06-22

申请号：US17554004

申请日：2021-12-17

Applicant: Intel Corporation

Inventor： Georgios Panagopoulos ,  Richard Geiger ,  Peter Baumgartner ,  Harald Gossner ,  Uwe Hodel ,  Michael Langenbuch ,  Johannes Xaver Rauh ,  Alexander Bechtold ,  Richard Hudeczek ,  Carla Moran Guizan

IPC: H01L23/522 ,  H01L21/8238 ,  H01L23/528 ,  H01L23/535 ,  H01L27/092

CPC classification number: H01L23/5226 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/5286 ,  H01L23/535 ,  H01L27/0924

Abstract: IC devices including inductors or transformers formed based on BPRs are disclosed. An example IC device includes semiconductor structures of one or more transistors, an electrically conductive layer, a support structure comprising a semiconductor material, and an inductor. The inductor includes an electrical conductor constituted by a power rail buried in the support structure. The inductor also includes a magnetic core coupled to the electrical conductor. The magnetic core includes magnetic rails buried in the support structure, magnetic TSVs buried in the support structure, and a magnetic plate at the backside of the support structure. The magnetic core includes a magnetic material, such as Fe, NiFe, CoZrTa, etc. In some embodiments, the IC device includes another power rail that is buried in the support structure and constitutes another electrical conductor coupled to the magnetic core. The two power rails and magnetic core can constitute a transformer.

公开(公告)号：US11380806B2

公开(公告)日：2022-07-05

申请号：US16641222

申请日：2017-09-28

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/93 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

公开(公告)号：US20200220030A1

公开(公告)日：2020-07-09

申请号：US16641222

申请日：2017-09-28

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/93 ,  H01L29/20 ,  H01L29/06 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

公开(公告)号：US20230187313A1

公开(公告)日：2023-06-15

申请号：US17550335

申请日：2021-12-14

Applicant: Intel Corporation

Inventor： Carla Moran Guizan ,  Peter Baumgartner ,  Richard Geiger ,  Alexander Bechtold ,  Uwe Hodel ,  Richard Hudeczek ,  Walther Lutz ,  Georgios Panagopoulos ,  Johannes Xaver Rauh ,  Roshini Sachithanandan

IPC: H01L23/48 ,  H01L23/66 ,  H01L23/528 ,  H01L27/088

CPC classification number: H01L23/481 ,  H01L23/66 ,  H01L23/5286 ,  H01L27/0886 ,  H01L2223/6616

Abstract: IC devices including transmission lines are disclosed. An example IC device includes two electrically conductive layers (first and second layers) and a support structure between the two electrically conductive layers. The first layer is coupled to transistors over or at least partially in the support structure. A shield of a transmission is placed in the first layer. Conductors of the transmission line are placed in the second layer and are coupled to the first layer by TSVs. Another example IC device includes three electrically conductive layers (first, second, and third layers). The first layer is coupled to transistors over or at least partially in the support structure. A shield of a transmission line is placed in the second layer and conductors of the transmission line are placed in the third layer. The conductors are coupled to the first layer by TSVs and coupled to the second layer by vias.

公开(公告)号：US11545586B2

公开(公告)日：2023-01-03

申请号：US16643929

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/872 ,  H01L29/20 ,  H01L29/66 ,  H01L29/205

Abstract: A Group III-Nitride (III-N) device structure is provided which comprises: a heterostructure having three or more layers comprising III-N material, an anode within a recess that extends through two or more of the layers, wherein the anode is in electrical contact with the first layer, a cathode comprising donor dopants, wherein the cathode is on the first layer of the heterostructure; and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.