公开(公告)号：US20140268993A1

公开(公告)日：2014-09-18

申请号：US13838640

申请日：2013-03-15

Applicant: INTERMOLECULAR INC.

Inventor： Tony P. Chiang ,  Dipankar Pramanik ,  Milind Weling

IPC: G11C13/00

CPC classification number: H01L45/1253 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146

Abstract: A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO2 interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.

Abstract translation: 非易失性电阻性存储元件包括吸氧层。 吸氧层形成为电极堆叠的一部分，并且在吸电氧中比电极堆叠的其它层更热力学上更有利。 氧吸收层的氧化物的吉布斯自由能（＆Dgr; fG°）比形成电极堆叠的相邻层的氧化物的吉布斯自由能更少（即更负）。 吸氧层与存在于电极堆叠的相邻层中的氧气反应，从而防止这种氧扩散到附近的硅层中，从而不期望地增加存储元件中的SiO 2界面层厚度，并且可以选择以减少这种厚度 后续处理。

公开(公告)号：US20140124725A1

公开(公告)日：2014-05-08

申请号：US13671824

申请日：2012-11-08

Applicant: INTERMOLECULAR, INC.

Inventor： David Chi ,  Vidyut Gopal ,  Minh Huu Le ,  Minh Anh Nguyen ,  Dipankar Pramanik ,  Milind Weling

IPC: H01L45/00

CPC classification number: H01L45/145 ,  G11C13/0007 ,  G11C2213/32 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1616

Abstract: Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature annealing. In some embodiments, the breakdown voltage of a current limiting layer may be at least about 8V. Some examples of such current limiting layers include titanium oxide doped with niobium, tin oxide doped with antimony, and zinc oxide doped with aluminum. Dopants and base materials may be deposited as separate sub-layers and then redistributed by annealing or may be co-deposited using reactive sputtering or co-sputtering. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layer while maintaining their performance.

Abstract translation: 提供了诸如电阻随机存取存储器（ReRAM）单元的半导体器件，其包括由掺杂的金属氧化物和/或氮化物形成的限流层。 这些限流层可具有至少约1欧姆 - 厘米的电阻率。 即使当这些层受到强电场和/或高温退火时，也保持该电阻率水平。 在一些实施例中，限流层的击穿电压可以为至少约8V。 这种电流限制层的一些实例包括掺杂有铌的氧化钛，掺杂有锑的氧化锡和掺杂有铝的氧化锌。 掺杂剂和基材可以作为单独的子层沉积，然后通过退火重新分布，或者可以使用反应溅射或共溅射共沉积。 层的高电阻率允许在保持其性能的同时缩小包括这些层的半导体器件的尺寸。