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11.发明申请METHOD AND SYSTEM FOR TESTING INDIRECT BANDGAP SEMICONDUCTOR DEVICES USING LUMINESCENCE IMAGING 有权用于测试使用发光成像的间接带状半导体器件的方法和系统公开(公告)号：US20090206287A1
公开(公告)日：2009-08-20
申请号：US12299759
申请日：2007-05-04
IPC分类号： G01N23/04
CPC分类号： H02S50/15 , G01N21/64 , G01N21/6489 , G01N21/66 , G01N21/9501 , G01N21/956 , H01L31/022425
摘要： Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).
摘要翻译： 描述了用于识别或确定诸如太阳能电池的间接带隙半导体器件中的空间分辨特性的方法和系统的实施例。 在一个实施例中，间接带隙半导体器件的空间分辨性质通过外部激发间接带隙半导体器件来确定，以使间接带隙半导体器件发射发光（110），从而响应于从间接带隙半导体器件发射的发光的图像 基于一个或多个发光图像（130）中的区域的相对强度的比较来确定间接带隙半导体器件的空间分辨特性。
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12.发明授权公开(公告)号：US09234849B2
公开(公告)日：2016-01-12
申请号：US13494373
申请日：2012-06-12
IPC分类号： G01J3/40 , G01N21/64 , F21Y101/02 , G01N21/88
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间隔带隙半导体结构的跨越大面积的大致均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。
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13.发明授权Method and system for testing indirect bandgap semiconductor devices using luminescence imaging 有权使用发光成像测试间接带隙半导体器件的方法和系统公开(公告)号：US08710860B2
公开(公告)日：2014-04-29
申请号：US12299759
申请日：2007-05-04
IPC分类号： G01R31/26
CPC分类号： H02S50/15 , G01N21/64 , G01N21/6489 , G01N21/66 , G01N21/9501 , G01N21/956 , H01L31/022425
摘要： Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).
摘要翻译： 描述了用于识别或确定诸如太阳能电池的间接带隙半导体器件中的空间分辨特性的方法和系统的实施例。 在一个实施例中，间接带隙半导体器件的空间分辨性质通过外部激发间接带隙半导体器件来确定，以使间接带隙半导体器件发射发光（110），从而响应于从间接带隙半导体器件发射的发光的图像 基于一个或多个发光图像（130）中的区域的相对强度的比较来确定间接带隙半导体器件的空间分辨特性。
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14.发明授权公开(公告)号：US08218140B2
公开(公告)日：2012-07-10
申请号：US13273697
申请日：2011-10-14
IPC分类号： G01J3/44
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间隔带隙半导体结构的跨越大面积的基本均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。
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15.发明申请公开(公告)号：US20120033067A1
公开(公告)日：2012-02-09
申请号：US13273697
申请日：2011-10-14
IPC分类号： H04N7/18
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间隔带隙半导体结构的跨越大面积的基本均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。
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16.发明申请Illumination Systems and Methods for Photoluminescence Imaging of Photovoltaic Cells and Wafers 审中-公开光电池和晶片的光致发光照相系统和方法公开(公告)号：US20130062536A1
公开(公告)日：2013-03-14
申请号：US13520371
申请日：2011-01-04
IPC分类号： G01N21/956 , G01N21/64
CPC分类号： G01N21/6489 , G01N21/9501 , G01N2201/06113 , G01N2201/062 , G01N2201/08
摘要： Methods are presented for analysing semiconductor materials (8), and silicon photovoltaic cells and cell precursors in particular, using imaging of photoluminescence (12) generated with high intensity illumination (16). The high photoluminescence signal levels (16) obtained with such illumination (30) enable the acquisition of images from moving samples with minimal blurring. Certain material defects of interest to semiconductor device manufacturers, especially cracks, appear sharper under high intensity illumination. In certain embodiments images of photoluminescence generated with high and low intensity illumination are compared to highlight selected material properties or defects.
摘要翻译： 提出了分析半导体材料（8）和硅光伏电池和电池前体的方法，使用高强度照明产生的光致发光成像（12）（16）。 用这种照明（30）获得的高光致发光信号电平（16）使得能够以最小的模糊从移动样品中获取图像。 半导体器件制造商感兴趣的某些材料缺陷，特别是裂纹，在高强度照明下显得更加尖锐。 在某些实施例中，将用高和低强度照明产生的光致发光图像进行比较以突出显示所选择的材料性质或缺陷。
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公开(公告)号：US09103792B2
公开(公告)日：2015-08-11
申请号：US12935654
申请日：2009-03-31
申请人： Thorsten Trupke , Robert A. Bardos
发明人： Thorsten Trupke , Robert A. Bardos
IPC分类号： H04N1/04 , H04N7/18 , H04N9/47 , G01N21/64 , G01N21/95 , G06T7/00 , H01L21/66 , H01L31/18 , H02S50/10
CPC分类号： G01N21/63 , G01N21/6489 , G01N21/9505 , G01N2021/646 , G01N2033/0095 , G06T7/0004 , G06T2207/30148 , H01L22/12 , H01L31/18 , H01L2924/0002 , H02S50/10 , H01L2924/00
摘要： A method is disclosed whereby luminescence images are captured from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed to provide information is then utilized to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilized to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.
摘要翻译： 公开了一种方法，其中从切割或部分处理的带隙材料如多晶硅晶片捕获发光图像。 然后处理这些图像以提供信息以用于预测由带隙材料制造的太阳能电池的各种关键参数，例如开路电压和短路电流。 该信息也可用于将带状物分类应用于带隙材料。 该方法还可用于调整或评估附加处理步骤（例如退火）的作用，旨在降低带隙材料中缺陷的密度。
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公开(公告)号：US09035267B2
公开(公告)日：2015-05-19
申请号：US13520375
申请日：2011-01-04
IPC分类号： G01N21/64
CPC分类号： G01N21/6489 , G01N21/9501 , G01N2201/06113 , G01N2201/062 , G01N2201/08
摘要： Methods and systems are presented for acquiring photoluminescence images (2) of silicon solar cells and wafers (4) as they progress along a manufacturing line (36). In preferred embodiments the images are acquired while maintaining motion of the samples. In certain embodiments photoluminescence is generated with short pulse, high intensity excitation, (8) for instance by a flash lamp (50) while in other embodiments images are acquired in line scanning fashion. The photoluminescence images can be analysed to obtain information on average or spatially resolved values of one or more sample properties such as minority carrier diffusion length, minority carrier lifetime, dislocation defects, impurities and shunts, or information on the incidence or growth of cracks in a sample.
摘要翻译： 提出了用于当硅太阳能电池和晶片（4）沿着生产线（36）进行时获取光致发光图像（2）的方法和系统。 在优选实施例中，在维持样本的运动的同时获取图像。 在某些实施例中，通过短脉冲，高强度激发（例如，闪光灯（50））产生光致发光，而在其它实施例中，以线扫描方式获取图像。 可以分析光致发光图像以获得关于一个或多个样品性质的平均或空间解析值的信息，例如少数载流子扩散长度，少数载流子寿命，位错缺陷，杂质和分流体，或关于裂纹的发生或生长的信息 样品。
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19.发明申请SEPARATION OF DOPING DENSITY AND MINORITY CARRIER LIFETIME IN PHOTOLUMINESCENCE MEASUREMENTS ON SEMICONDUCTOR MATERIALS 有权在半导体材料的光致发光测量中的分离密度和少数载体寿命的分离公开(公告)号：US20120181452A1
公开(公告)日：2012-07-19
申请号：US13384970
申请日：2010-07-19
申请人： Thorsten Trupke
发明人： Thorsten Trupke
IPC分类号： G01N21/64
CPC分类号： G01N21/6489 , G01N2201/06113 , G01N2201/10 , H01L22/12
摘要： Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analysed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analysed in terms of background doping density. In yet another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers. The methods may find application in solar cell manufacturing for improving the manufacture of silicon ingots and bricks, or for providing a cutting guide for wafering.
摘要翻译： 提出了用于分离背景掺杂密度和有效少数载流子寿命对从半导体材料产生的光致发光（PL）的影响的方法。 在一个实施方案中，通过另一种技术来测量背景掺杂密度，使得可以根据有效的少数载流子寿命来分析PL测量。 在另一个实施例中，通过另一技术来测量有效寿命，使得能够根据背景掺杂密度来分析PL测量。 在另一个实施方案中，通过计算在不同光谱区域中获得或由不同激发波长产生的两个PL测量的强度比来消除背景掺杂浓度的影响。 这些方法对于诸如硅砖的砖块或锭块的体积样品特别有用，其中可以获得比在薄的表面限制样品（例如硅晶片）上更大范围的体寿命值的信息。 该方法可以在太阳能电池制造中应用于改善硅锭和砖的制造，或用于提供用于晶片化的切割引导件。
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公开(公告)号：US20110025839A1
公开(公告)日：2011-02-03
申请号：US12935654
申请日：2009-03-31
申请人： Thorsten Trupke , Robert A. Bardos
发明人： Thorsten Trupke , Robert A. Bardos
CPC分类号： G01N21/63 , G01N21/6489 , G01N21/9505 , G01N2021/646 , G01N2033/0095 , G06T7/0004 , G06T2207/30148 , H01L22/12 , H01L31/18 , H01L2924/0002 , H02S50/10 , H01L2924/00
摘要： A method (1) is disclosed whereby luminescence images are captured (2) from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed (3) to provide information about defects such as dislocations within the bandgap material. The resultant information is then utilised (4) to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilised to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.
摘要翻译： 公开了一种方法（1），其中从诸如多晶硅晶片的切割或部分处理的带隙材料捕获发光图像（2）。 然后处理这些图像（3）以提供关于缺陷的信息，例如带隙材料内的位错。 然后利用所得到的信息（4）来预测由带隙材料制造的太阳能电池的各种关键参数，例如开路电压和短路电流。 该信息也可用于将带状物分类应用于带隙材料。 该方法还可用于调整或评估附加处理步骤（例如退火）的作用，旨在降低带隙材料中缺陷的密度。
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