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1.发明申请Illumination Systems and Methods for Photoluminescence Imaging of Photovoltaic Cells and Wafers 审中-公开光电池和晶片的光致发光照相系统和方法公开(公告)号：US20130062536A1
公开(公告)日：2013-03-14
申请号：US13520371
申请日：2011-01-04
IPC分类号： G01N21/956 , G01N21/64
CPC分类号： G01N21/6489 , G01N21/9501 , G01N2201/06113 , G01N2201/062 , G01N2201/08
摘要： Methods are presented for analysing semiconductor materials (8), and silicon photovoltaic cells and cell precursors in particular, using imaging of photoluminescence (12) generated with high intensity illumination (16). The high photoluminescence signal levels (16) obtained with such illumination (30) enable the acquisition of images from moving samples with minimal blurring. Certain material defects of interest to semiconductor device manufacturers, especially cracks, appear sharper under high intensity illumination. In certain embodiments images of photoluminescence generated with high and low intensity illumination are compared to highlight selected material properties or defects.
摘要翻译： 提出了分析半导体材料（8）和硅光伏电池和电池前体的方法，使用高强度照明产生的光致发光成像（12）（16）。 用这种照明（30）获得的高光致发光信号电平（16）使得能够以最小的模糊从移动样品中获取图像。 半导体器件制造商感兴趣的某些材料缺陷，特别是裂纹，在高强度照明下显得更加尖锐。 在某些实施例中，将用高和低强度照明产生的光致发光图像进行比较以突出显示所选择的材料性质或缺陷。
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公开(公告)号：US09035267B2
公开(公告)日：2015-05-19
申请号：US13520375
申请日：2011-01-04
IPC分类号： G01N21/64
CPC分类号： G01N21/6489 , G01N21/9501 , G01N2201/06113 , G01N2201/062 , G01N2201/08
摘要： Methods and systems are presented for acquiring photoluminescence images (2) of silicon solar cells and wafers (4) as they progress along a manufacturing line (36). In preferred embodiments the images are acquired while maintaining motion of the samples. In certain embodiments photoluminescence is generated with short pulse, high intensity excitation, (8) for instance by a flash lamp (50) while in other embodiments images are acquired in line scanning fashion. The photoluminescence images can be analysed to obtain information on average or spatially resolved values of one or more sample properties such as minority carrier diffusion length, minority carrier lifetime, dislocation defects, impurities and shunts, or information on the incidence or growth of cracks in a sample.
摘要翻译： 提出了用于当硅太阳能电池和晶片（4）沿着生产线（36）进行时获取光致发光图像（2）的方法和系统。 在优选实施例中，在维持样本的运动的同时获取图像。 在某些实施例中，通过短脉冲，高强度激发（例如，闪光灯（50））产生光致发光，而在其它实施例中，以线扫描方式获取图像。 可以分析光致发光图像以获得关于一个或多个样品性质的平均或空间解析值的信息，例如少数载流子扩散长度，少数载流子寿命，位错缺陷，杂质和分流体，或关于裂纹的发生或生长的信息 样品。
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公开(公告)号：US09103792B2
公开(公告)日：2015-08-11
申请号：US12935654
申请日：2009-03-31
申请人： Thorsten Trupke , Robert A. Bardos
发明人： Thorsten Trupke , Robert A. Bardos
IPC分类号： H04N1/04 , H04N7/18 , H04N9/47 , G01N21/64 , G01N21/95 , G06T7/00 , H01L21/66 , H01L31/18 , H02S50/10
CPC分类号： G01N21/63 , G01N21/6489 , G01N21/9505 , G01N2021/646 , G01N2033/0095 , G06T7/0004 , G06T2207/30148 , H01L22/12 , H01L31/18 , H01L2924/0002 , H02S50/10 , H01L2924/00
摘要： A method is disclosed whereby luminescence images are captured from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed to provide information is then utilized to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilized to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.
摘要翻译： 公开了一种方法，其中从切割或部分处理的带隙材料如多晶硅晶片捕获发光图像。 然后处理这些图像以提供信息以用于预测由带隙材料制造的太阳能电池的各种关键参数，例如开路电压和短路电流。 该信息也可用于将带状物分类应用于带隙材料。 该方法还可用于调整或评估附加处理步骤（例如退火）的作用，旨在降低带隙材料中缺陷的密度。
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公开(公告)号：US20110025839A1
公开(公告)日：2011-02-03
申请号：US12935654
申请日：2009-03-31
申请人： Thorsten Trupke , Robert A. Bardos
发明人： Thorsten Trupke , Robert A. Bardos
CPC分类号： G01N21/63 , G01N21/6489 , G01N21/9505 , G01N2021/646 , G01N2033/0095 , G06T7/0004 , G06T2207/30148 , H01L22/12 , H01L31/18 , H01L2924/0002 , H02S50/10 , H01L2924/00
摘要： A method (1) is disclosed whereby luminescence images are captured (2) from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed (3) to provide information about defects such as dislocations within the bandgap material. The resultant information is then utilised (4) to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilised to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.
摘要翻译： 公开了一种方法（1），其中从诸如多晶硅晶片的切割或部分处理的带隙材料捕获发光图像（2）。 然后处理这些图像（3）以提供关于缺陷的信息，例如带隙材料内的位错。 然后利用所得到的信息（4）来预测由带隙材料制造的太阳能电池的各种关键参数，例如开路电压和短路电流。 该信息也可用于将带状物分类应用于带隙材料。 该方法还可用于调整或评估附加处理步骤（例如退火）的作用，旨在降低带隙材料中缺陷的密度。
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5.发明申请公开(公告)号：US20120142125A1
公开(公告)日：2012-06-07
申请号：US13389805
申请日：2010-08-16
CPC分类号： G01N21/6489 , G01N21/6456 , G01N21/9501 , G01N21/9505
摘要： A method of photoluminence (PL) imaging of a series of silicon wafers, the method including the step of: utilizing incident illumination of a wavelength greater than 808 nm. The present invention further provides a method of analysing silicon semiconductor material utilising various illumination, camera and filter combinations. In some embodiments the PL response is captured by a MOSIR camera. In another embodiment a camera is used to capture the entire PL response and a long pass filter is applied to block a portion of the signal reaching the camera/detector.
摘要翻译： 一种硅晶片的发光（PL）成像方法，该方法包括以下步骤：利用大于808nm的波长的入射照明。 本发明还提供了利用各种照明，相机和滤光器组合来分析硅半导体材料的方法。 在一些实施例中，PL响应由MOSIR相机捕获。 在另一个实施例中，相机用于捕获整个PL响应，并且应用长通滤波器来阻挡到达相机/检测器的信号的一部分。
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公开(公告)号：US20140039820A1
公开(公告)日：2014-02-06
申请号：US14110712
申请日：2012-04-17
申请人： Thorsten Trupke , Juergen Weber
发明人： Thorsten Trupke , Juergen Weber
CPC分类号： G01R27/02 , G01J1/42 , G01N21/6489 , G01N21/9501 , H02S50/10
摘要： Luminescence-based methods are disclosed for determining quantitative values for the series resistance across a photovoltaic cell, preferably without making electrical contact to the cell. Luminescence signals are generated by exposing the cell to uniform and patterned illumination with excitation light selected to generate luminescence from the cell, with the illumination patterns preferably produced using one or more filters selected to attenuate the excitation light and transmit the luminescence.
摘要翻译： 公开了基于发光的方法来确定跨越光伏电池的串联电阻的定量值，优选不与电池电接触。 发光信号是通过将激发光曝光于均匀和图案化的照明而产生的，该激发光被选择以产生来自电池的发光，其中照明图案优选地使用一个或多个被选择来衰减激发光并传输发光的滤光器产生。
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7.发明授权公开(公告)号：US08064054B2
公开(公告)日：2011-11-22
申请号：US12083429
申请日：2006-10-11
IPC分类号： G01J3/40
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are imaged processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间接带隙半导体结构的大面积上基本均匀的同时照射入射引起的光致发光图像。 对光致发光图像进行成像处理（622），以使用在大面积中诱导的光致发光的空间变化来定量间接带隙半导体结构（140）的空间分辨的特定电子特性。
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公开(公告)号：US07919762B2
公开(公告)日：2011-04-05
申请号：US12375889
申请日：2007-07-27
IPC分类号： G01N21/64
CPC分类号： G01N21/6489 , G01N21/66 , G01N21/9501 , G01N2021/6421 , G01R31/2648 , H01L22/10
摘要： Methods (200, 300), apparatuses and systems (100) for determining minority carrier diffusion lengths in a semi-conductor structure (130), which may be a solar cell or a unprocessed or partially processed silicon sample, are disclosed. The luminescence (140) may comprise photoluminescence, electroluminescence, or both. Luminescence (140) is excited (212) in the structure (130), and the intensities of short- and long-wavelength luminescence (140) are measured (214). Luminescence intensities may be captured from either side of the sample using a single photodetector, a FPA, a CCD array (150), or a mapping tool. The luminescence (140) excited in the structure (130) may be filtered (160) at short and long cutoff wavelengths. Diffusion lengths of the structure (130) are generated (216) using a predefined theoretical relationship. The generating step (216) may comprise calculating (316) intensity ratios from luminescence intensities and converting (320) the intensity ratios into diffusion lengths using the predefined theoretical relationship.
摘要翻译： 公开了用于确定半导体结构（130）中的少数载流子扩散长度的方法（200,300），装置和系统（100），其可以是太阳能电池或未处理或部分处理的硅样品。 发光（140）可以包括光致发光，电致发光或两者。 发光（140）在结构（130）中被激发（212），并且测量短波长和长波长发光（140）的强度（214）。 可以使用单个光电检测器，FPA，CCD阵列（150）或映射工具从样品的任一侧捕获发光强度。 在结构（130）中激发的发光（140）可以在短和长截止波长下被滤波（160）。 使用预定义的理论关系产生（216）结构（130）的扩散长度。 生成步骤（216）可以包括从发光强度计算（316）强度比，并且使用预定的理论关系将（320）强度比转换成扩散长度。
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9.发明申请公开(公告)号：US20090051914A1
公开(公告)日：2009-02-26
申请号：US12083429
申请日：2006-10-11
IPC分类号： G01J3/40
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间接带隙半导体结构的大面积上基本均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。
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10.发明申请公开(公告)号：US20120257044A1
公开(公告)日：2012-10-11
申请号：US13494373
申请日：2012-06-12
IPC分类号： H04N7/18
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specificed emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）减少高于特定发射峰值的所产生的光的长波长光。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间隔带隙半导体结构的跨越大面积的基本均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。
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