公开(公告)号：US09917170B2

公开(公告)日：2018-03-13

申请号：US15136121

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Romain Esteve ,  Markus Kahn ,  Gerald Unegg

IPC: H01L21/28 ,  H01L21/44 ,  H01L29/45 ,  H01L29/16 ,  H01L21/04 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/45 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/26506 ,  H01L21/324 ,  H01L29/1608

Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.

公开(公告)号：US20170309720A1

公开(公告)日：2017-10-26

申请号：US15136121

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Romain Esteve ,  Markus Kahn ,  Gerald Unegg

IPC: H01L29/45 ,  H01L21/324 ,  H01L21/265 ,  H01L29/16 ,  H01L21/04

CPC classification number: H01L29/45 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/26506 ,  H01L21/324 ,  H01L29/1608

Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.