公开(公告)号：US20250089584A1

公开(公告)日：2025-03-13

申请号：US18953341

申请日：2024-11-20

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H10N70/00 ,  H10N70/20

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

公开(公告)号：US12156488B2

公开(公告)日：2024-11-26

申请号：US18086211

申请日：2022-12-21

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H10N70/00 ,  H10N70/20

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

公开(公告)号：US20180061756A1

公开(公告)日：2018-03-01

申请号：US15654526

申请日：2017-07-19

Applicant: Infineon Technologies AG

Inventor： Kerstin Kaemmer ,  Martin Bartels ,  Henning Feick

IPC: H01L23/525 ,  H01L27/112 ,  H01L27/102 ,  G11C17/16

CPC classification number: H01L23/5252 ,  G11C17/16 ,  G11C17/18 ,  H01L27/1026 ,  H01L27/11206

Abstract: One time programmable memory cell and memory arrayMemory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable element.