公开(公告)号：US11287405B2

公开(公告)日：2022-03-29

申请号：US16852035

申请日：2020-04-17

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  Abidin Güçlü Onaran

IPC: G01N33/00 ,  G01N27/04 ,  G01N27/12 ,  G01N27/16

Abstract: A sensor device includes a gas sensor disposed on a first substrate, a heating element disposed within the first substrate, a processor operatively coupled to the gas sensor and the heating element, and a memory storing a program to be executed by the processor. The gas sensor is configured to measure first sensor data points and second sensor data points. The gas sensor overlaps the heating element. The program includes instructions for performing the following steps in real-time: recording first resistance values and second resistance values of the heating element; adjusting the second sensor data points using the first sensor data points, the first resistance values, and the second resistance values to obtain corrected sensor data points; and determining sensed values from the corrected sensor data points.

公开(公告)号：US11189539B2

公开(公告)日：2021-11-30

申请号：US16433278

申请日：2019-06-06

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  John Cooper ,  Joerg Ortner ,  Stephan Pindl ,  Caterina Travan ,  Alexander Zoepfl

IPC: H01L23/31 ,  H01L21/02

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

公开(公告)号：US20190063968A1

公开(公告)日：2019-02-28

申请号：US16106247

申请日：2018-08-21

Applicant: Infineon Technologies AG

Inventor： Christian Bretthauer ,  Alfons Dehe ,  Prashanth Makaram ,  Abidin Güçlü Onaran ,  Arnaud Walther

IPC: G01F1/36 ,  G01F1/38 ,  G01F1/84 ,  G01N11/08

Abstract: In accordance with an embodiment, a MEMS sensor includes a membrane that is suspended from the substrate, a resonant frequency of said membrane being influenced by an ambient pressure that acts on the membrane; and an evaluation device configured to perform a first measurement based on the resonant frequency of the membrane to obtain a measurement result, where the evaluation device is configured to at least partly compensate an influence of the ambient pressure on the measurement result

公开(公告)号：US11908763B2

公开(公告)日：2024-02-20

申请号：US17483312

申请日：2021-09-23

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  John Cooper ,  Joerg Ortner ,  Stephan Pindl ,  Caterina Travan ,  Alexander Zoepfl

IPC: H01L23/31 ,  H01L21/02

CPC classification number: H01L23/3171 ,  H01L21/02282 ,  H01L23/3178

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

公开(公告)号：US11899001B2

公开(公告)日：2024-02-13

申请号：US16692489

申请日：2019-11-22

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  Ulrich Krumbein

IPC: G01N33/00 ,  G01N27/414 ,  G06F1/3203

CPC classification number: G01N33/0006 ,  G01N27/4146 ,  G01N33/0008 ,  G01N33/0062 ,  G01N33/0073 ,  G06F1/3203 ,  G01N2033/0068

Abstract: A method includes exposing gas sensitive material of a gas sensor device to different adjusted target gas concentrations, determining measurement values of the resistance of the gas sensitive material between first and second contact regions in response to the adjusted target gas concentration, determining a first gas sensor behavior model based on the measurement values of the resistance of the gas sensitive material as a function of the adjusted target gas concentration, translating the first gas sensor behavior model into a corresponding second gas sensor behavior model for the resistance of the gas sensitive material as a function of a control voltage, and sweeping the control voltage based on the second gas sensor behavior model over a control voltage range for providing control voltage dependent resistance data, wherein the control voltage dependent resistance data over the control voltage range form the calibration data for the gas sensor device.

公开(公告)号：US20220013424A1

公开(公告)日：2022-01-13

申请号：US17483312

申请日：2021-09-23

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  John Cooper ,  Joerg Ortner ,  Stephan Pindl ,  Caterina Travan ,  Alexander Zoepfl

IPC: H01L23/31 ,  H01L21/02

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

公开(公告)号：US20200166492A1

公开(公告)日：2020-05-28

申请号：US16692489

申请日：2019-11-22

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  Ulrich Krumbein

IPC: G01N33/00 ,  G06F1/3203

Abstract: A method includes exposing gas sensitive material of a gas sensor device to different adjusted target gas concentrations, determining measurement values of the resistance of the gas sensitive material between first and second contact regions in response to the adjusted target gas concentration, determining a first gas sensor behavior model based on the measurement values of the resistance of the gas sensitive material as a function of the adjusted target gas concentration, translating the first gas sensor behavior model into a corresponding second gas sensor behavior model for the resistance of the gas sensitive material as a function of a control voltage, and sweeping the control voltage based on the second gas sensor behavior model over a control voltage range for providing control voltage dependent resistance data, wherein the control voltage dependent resistance data over the control voltage range form the calibration data for the gas sensor device.