公开(公告)号：US09881991B2

公开(公告)日：2018-01-30

申请号：US14918190

申请日：2015-10-20

Applicant: Infineon Technologies AG

Inventor： Wolfgang Lehnert ,  Michael Stadtmueller ,  Stefan Pompl ,  Markus Meyer

IPC: H01L27/108 ,  H01L49/02 ,  H01L29/66 ,  H01L29/94

CPC classification number: H01L28/60 ,  H01L27/10829 ,  H01L27/10861 ,  H01L29/66181 ,  H01L29/945

Abstract: A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.

公开(公告)号：US09508790B2

公开(公告)日：2016-11-29

申请号：US14724437

申请日：2015-05-28

Applicant: Infineon Technologies AG

Inventor： Thomas Popp ,  Stefan Pompl ,  Rudolf Berger

IPC: H01L49/02 ,  H01L27/08

CPC classification number: H01L28/90 ,  H01L27/0805

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

公开(公告)号：US20150263083A1

公开(公告)日：2015-09-17

申请号：US14724437

申请日：2015-05-28

Applicant: Infineon Technologies AG

Inventor： Thomas Popp ,  Stefan Pompl ,  Rudolf Berger

IPC: H01L49/02

CPC classification number: H01L28/90 ,  H01L27/0805

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract translation: 形成半导体器件的方法包括在衬底中形成具有侧壁的开口，并在开口中形成第一外延层。 第一外延层形成在侧壁的第一部分中，而不在侧壁的第二部分中生长。 在形成第一外延层之后，在开口中形成第二外延层。 第二外延层形成在侧壁的第二部分中。 在形成第二外延层之后去除第一外延层。

公开(公告)号：US20130043562A1

公开(公告)日：2013-02-21

申请号：US13660966

申请日：2012-10-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Wolfgang Lehnert ,  Stefan Pompl ,  Markus Meyer

IPC: H01L29/94 ,  H01L21/02 ,  H01L21/20

CPC classification number: H01L29/04 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/763 ,  H01L21/823828 ,  H01L28/60 ,  H01L29/16 ,  H01L29/51 ,  H01L29/7833 ,  H01L29/945

Abstract: In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C.