公开(公告)号：US20190088550A1

公开(公告)日：2019-03-21

申请号：US16081236

申请日：2017-02-27

Applicant: Infineon Technologies AG

Inventor： Paul Ganitzer ,  Carsten von Koblinski ,  Thomas Feil ,  Gerald Lackner ,  Jochen Mueller ,  Martin Poelzl ,  Tobias Polster

IPC: H01L21/8234 ,  H01L21/768 ,  H01L21/762 ,  H01L21/56 ,  H01L23/48 ,  H01L25/065

Abstract: In an embodiment, a method includes forming at least one trench in non-device regions of a first surface of a semiconductor wafer, the non-device regions being arranged between component positions, the component positions including device regions and a first metallization structure, applying a first polymer layer to the first surface of a semiconductor wafer such that the trenches and edge regions of the component positions are covered with the first polymer layer and such that at least a portion of the first metallization structure is uncovered by the first polymer layer, removing portions of a second surface of the semiconductor wafer, the second surface opposing the first surface, revealing portions of the first polymer layer in the non-device regions and producing a worked second surface and inserting a separation line through the first polymer layer in the non-device regions to form a plurality of separate semiconductor dies.

公开(公告)号：US20250096101A1

公开(公告)日：2025-03-20

申请号：US18809460

申请日：2024-08-20

Applicant: Infineon Technologies AG

Inventor： Carsten Joachim von Koblinski ,  Tobias Polster

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/13 ,  H01L23/15

Abstract: A semiconductor device includes a semiconductor chip having a front side and a backside. A first electrode is disposed on the front side of the semiconductor chip. An inorganic substrate includes a first side, a second side opposite the first side, and a first lateral side extending between the first side and the second side. A metal layer is disposed over the first side and the first lateral side of the inorganic substrate. The first electrode is bonded to the metal layer.

公开(公告)号：US12205919B2

公开(公告)日：2025-01-21

申请号：US17555709

申请日：2021-12-20

Applicant: Infineon Technologies AG

Inventor： Chuan Cheah ,  Josef Hoeglauer ,  Tobias Polster

IPC: H01L21/78 ,  H01L21/56 ,  H01L23/00 ,  H01L23/373 ,  H01L23/538 ,  H01L25/00 ,  H01L25/07 ,  H01L29/40 ,  H01L29/45

Abstract: A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.

公开(公告)号：US20240371793A1

公开(公告)日：2024-11-07

申请号：US18774282

申请日：2024-07-16

Applicant: Infineon Technologies AG

Inventor： Christian Gruber ,  Benjamin Bernard ,  Tobias Polster ,  Carsten von Koblinski

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/78 ,  H01L23/538

Abstract: A semiconductor device includes: a semiconductor die having a front side surface, a backside surface opposite the front side surface, and side faces; a backside metallization layer at least partly covering the backside surface of the semiconductor die and projecting laterally outwards beyond the side faces of the semiconductor die; and a protection layer at least partly covering the side faces of the semiconductor die. The backside metallization layer projects laterally outwards beyond the protection layer.

公开(公告)号：US20230197663A1

公开(公告)日：2023-06-22

申请号：US17555709

申请日：2021-12-20

Applicant: Infineon Technologies AG

Inventor： Chuan Cheah ,  Josef Hoeglauer ,  Tobias Polster

IPC: H01L23/00 ,  H01L21/78 ,  H01L29/40 ,  H01L21/56 ,  H01L25/00 ,  H01L25/07 ,  H01L23/538

CPC classification number: H01L24/24 ,  H01L21/78 ,  H01L29/401 ,  H01L21/568 ,  H01L24/82 ,  H01L25/50 ,  H01L25/072 ,  H01L23/5389 ,  H01L29/45

Abstract: A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.