公开(公告)号：US20230026151A1

公开(公告)日：2023-01-26

申请号：US17524713

申请日：2021-11-11

Applicant: Innolux Corporation

Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  H05K1/02

Abstract: The embodiment of the disclosure provides a composite layer circuit element and a manufacturing method thereof. The manufacturing method of the composite layer circuit element includes the following. A carrier is provided. A first dielectric layer is formed on the carrier, and the first dielectric layer is patterned. The carrier on which the first dielectric layer is formed is disposed on a first curved-surface mold, and the first dielectric layer is cured. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer is patterned. The carrier on which the first dielectric layer and the second dielectric layer are formed is disposed on a second curved-surface mold, and the second dielectric layer is cured. A thickness of a projection of the first curved-surface mold is smaller than a thickness of a projection of the second curved-surface mold.

公开(公告)号：US20220189862A1

公开(公告)日：2022-06-16

申请号：US17530373

申请日：2021-11-18

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

公开(公告)号：US20220181242A1

公开(公告)日：2022-06-09

申请号：US17533068

申请日：2021-11-22

Applicant: Innolux Corporation

Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

IPC: H01L23/498 ,  H01L21/48

Abstract: A redistribution layer structure and the manufacturing method thereof are provided. The redistribution layer structure includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the second metal layer. A chemical resistance of the first dielectric layer is greater than a chemical resistance of the second dielectric layer.